IXTH200N085T [IXYS]
Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IXTH200N085T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTH200N085T
IXTQ200N085T
VDSS = 85
ID25 = 200
RDS(on) ≤ 5.0 m Ω
V
A
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXTH)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
85
85
V
V
VGSM
Transient
20
V
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
200
75
540
A
A
A
G
(TAB)
D
S
IAR
EAS
TC =25°C
TC = 25° C
25
1.0
A
J
TO-3P (IXTQ)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
TC =25°C
480
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
G
D
S
(TAB)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
Md
Mounting torque
1.13 / 10 Nm/lb.in.
Features
ꢀUltra-low On Resistance
Weight
TO-3P
TO-247
5.5
6
g
g
ꢀUnclamped Inductive Switching (UIS)
rated
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 ° C Operating Temperature
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
Advantages
ꢀ
Easy to mount
Space savings
High power density
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
85
V
V
ꢀ
ꢀ
2.0
4.0
VGS
=
20 V, VDS = 0 V
200
nA
Applications
ꢀ
Automotive
IDSS
VDS = VDSS
VGS = 0 V
5
250
µA
µA
- Motor Drives
- 42V Power Bus
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
4.0
5.0 m Ω
- ABS Systems
ꢀ
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
ꢀ
Systems
High Current Switching
ꢀ
Applications
DS99703 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTH200N085T
IXTQ200N085T
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-247AD Outline
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
72
125
S
Ciss
Coss
Crss
7600
1040
200
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
32
80
65
64
ns
ns
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Qg(on)
Qgs
152
37
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
42
RthJC
RthCS
0.31°C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Symbol
Test Conditions
Characteristic Values
.780 .800
.177
TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
∅P 3.55
3.65
.140 .144
IS
VGS = 0 V
200
A
A
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
540
1.0
V
TO-3P (IXTQ) Outline
IF = 25 A, -di/dt = 100 A/µs
90
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2 7,071,537
IXTA200N085T
IXTP200N085T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
180
160
140
120
100
80
300
270
240
210
180
150
120
90
V
= 10V
V
= 10V
GS
GS
8V
7V
8V
7V
6V
6V
5V
60
40
5V
60
20
30
0
0
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
1.1
0
1
2
3
4
5
6
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
200
180
160
140
120
100
80
V
= 10V
GS
V
= 10V
GS
8V
7V
I
= 200A
D
6V
5V
I
= 100A
D
60
40
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.8
2.6
2.4
2.2
2
140
120
100
80
External Lead Current Limit for TO-263 (7-Lead)
T = 175ºC
J
V
= 10V
15V
GS
1.8
1.6
1.4
1.2
1
- - - -
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
T = 25ºC
J
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
175
40
80
120
160
200
240
280
320
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTH200N085T
IXTQ200N085T
Fig. 8. Transconductance
Fig. 7. Input Admittance
270
240
210
180
150
120
90
180
160
140
120
100
80
T
J
= - 40ºC
T
J
= -40ºC
25ºC
150ºC
25ºC
150ºC
60
40
60
20
30
0
0
0
30
60
90
120 150 180 210 240 270 300
ID - Amperes
3
0.4
0
3.5
4
4.5
5
5.5
6
6.5
1.3
40
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
270
240
210
180
150
120
90
V
= 43V
DS
I
I
= 25A
D
G
= 10mA
T
= 150ºC
J
T
= 25ºC
J
60
30
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
C
f = 1 MHz
5
rss
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA200N085T
IXTP200N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
90
80
70
60
50
40
30
100
90
80
70
60
50
40
30
R
V
V
= 5
Ω
G
= 10V
= 43V
GS
DS
T = 25ºC
J
R
V
V
= 5
Ω
G
= 10V
= 43V
GS
DS
I
= 50A
D
I
= 25A
45
D
T = 125ºC
J
25
30
35
40
45
50
25
35
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
70
97
94
91
88
85
82
79
76
73
70
180
160
140
120
100
80
65
60
55
50
45
40
35
30
25
t r
td(on)
- - - -
68
66
64
62
60
58
56
54
52
TJ = 125ºC, V = 10V
GS
I = 25A
D
V
= 43V
DS
I
= 50A
t f
R
td(off)
- - - -
D
= 5 , V = 10V
Ω
G
GS
V
= 43V
I
= 25A
DS
D
60
I
= 50A
D
40
20
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
72
70
68
66
64
62
60
58
56
54
52
50
105
100
95
90
85
80
75
70
65
60
55
50
200
180
160
140
120
100
80
320
290
260
230
200
170
140
110
80
T = 25ºC
t f
td(off)
- - - -
J
T = 125ºC, VGS = 10V
J
V
DS = 43V
TJ = 125ºC
tf
td(off)
- - - -
= 5 , VGS = 10V
Ω
I
= 50A
D
I
= 25A
D
R
G
V
DS = 43V
T =125ºC
J
60
T = 25ºC
J
40
4
6
8
10
12
14
16
18
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
RG - Ohms
IXYS REF: T_200N085T (61) 11-20-06-A.xls
© 2006 IXYS CORPORATION All rights reserved
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