IXTH41N25 [IXYS]
Power Field-Effect Transistor, 41A I(D), 250V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IXTH41N25 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 41A I(D), 250V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：559K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXTH 41N25
VDSS = 250 V
Standard
Power MOSFET
ID(cont) = 41 A
RDS(on) = 72 mΩ
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol Testconditions
Maximum ratings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
250
250
V
V
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D (TAB)
G
ID25
IDM
IAR
T
= 25°C MOSFET chip capability
41
164
41
A
A
A
TCC = 25°C, pulse width limited by TJM
D
S
G = Gate
S = Source
D
= Drain
EAR
EAS
T
= 25°C
30
1.0
mJ
J
TCC = 25°C
Tab = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
300
W
-55 ... +150
°C
Features
TJM
Tstg
150
°C
°C
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
JEDEC TO-247 AD
-55 ... +150
Md
Mounting torque
TO-264
1.13/10 Nm/lb.in.
Weight
6
g
•Fast switching times
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
•High commutating dv/dt rating
Applications
•Motor controls
•DC choppers
Symbol Test Conditions
Characteristic Values
•Switched-mode and resonant-mode
power supplies
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
•Uninterruptible Power Supplies (UPS)
VDSS
VGS = 0 V, I = 250 µA
VDS = VGS, IDD = 250 µA
250
2.0
V
V
VGS(th)
4.0
Advantages
IGSS
IDSS
VGS = ±20 V DC, VDS = 0
±100 nA
•Easy to mount with one screw
(isolated mounting screw hole)
•Space savings
VDS = V
25 µA
250 µA
VGS = 0 DVSS
TJ = 125°C
•High power density
RDS(on)
VGS = 10 V, I = 15A
60
72 mΩ
Pulse test, t ≤D300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
DS98954B(08/03)
IXTH 41N25
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20
28
S
Ciss
Coss
Crss
3200
510
180
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
19
19
79
17
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 3.6 Ω (External)
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Qg(on)
Qgs
110
18
48
nC
nC
nC
Min. Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
A12
Qgd
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.42 K/W
K/W
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
6.15 BSC
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
41
A
A
V
ISM
Repetitive; pulse width limited by TJM
164
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100V
300
3.0
ns
µC
Qrr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 41N25
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
45
40
35
30
25
20
15
10
5
12 0
10 0
80
60
40
20
0
VGS = 10V
VGS = 10V
9V
9V
8V
7V
8V
7V
6V
5V
6V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4
8
12
16
2 0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
45
40
35
30
25
20
15
10
5
2.8
VGS = 10V
VG S = 10V
2.5
2.2
1. 9
1. 6
1. 3
9V
8V
7V
6V
I D = 41A
I D = 20.5A
5V
1
0.7
0.4
0
-50 -25
0
25
50 75 100 125 150
0
1
2
3
4
5
6
7
8
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
42
36
30
24
18
12
6
4
3.5
3
VG S = 10V
TJ = 125ºC
2.5
2
1.5
1
TJ = 25ºC
0
0.5
-50 -25
0
25 50 75 100 125 150
0
20
40
60
80
100
120
TC - Degrees Centigrade
I D - Amperes
© 2003 IXYS All rights reserved
IXTH 41N25
Fig. 8. Transconductance
Fig. 7. Input Admittance
80
70
60
50
40
30
20
10
60
50
40
30
20
10
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
0
0
3
3.5
4
4.5
5
5.5
6
6.5
7
0
20
40
60
80
100
120 140
VGS - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
12 0
10 0
80
60
40
20
0
10
VDS = 125V
I D= 20.5A
I G= 10mA
8
6
4
2
0
TJ = 125ºC
TJ = 25ºC
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
100
120
VSD - Volts
Q G - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
10 0 0
10 0
1
f = 1M Hz
C
C
C
iss
0.1
oss
rss
0.01
0
5
10
15
20 25 30 35 40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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Power Field-Effect Transistor, 42A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
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