IXTK120P20T [IXYS]
Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3;
| 型号： | IXTK120P20T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 |
| 文件： | 总6页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchPTM
Power MOSFETs
VDSS = - 200V
ID25 = - 120A
IXTK120P20T
IXTX120P20T
RDS(on)
≤
30mΩ
trr
≤
300ns
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-264 (IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 200
- 200
V
V
VDGR
Tab
VGSS
VGSM
Continuous
Transient
±15
±25
V
V
PLUS247 (IXTX)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
-120
A
A
- 400
IA
EAS
TC = 25°C
TC = 25°C
-100
3
A
J
G
D
S
Tab
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
1040
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Recitifier
Low RDS(ON) and QG
z
z
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
z
z
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
- 200
- 2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250μA
VDS = VGS, ID = - 250μA
VGS = ±15V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
- 4.5
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
z
±200 nA
z
z
IDSS
- 25 μA
z
TJ = 125°C
- 300 μA
z
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
30 mΩ
DS100401B(5/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTK120P20T
IXTX120P20T
Symbol
Test Conditions
Characteristic Values
TO-264 AA Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = - 60A, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
85
145
S
Ciss
Coss
Crss
73
2550
480
nF
pF
pF
td(on)
90
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
tr
85
ns
ns
td(off)
200
1 - Gate
2,4 - Drain
3 - Source
tf
50
ns
Qg(on)
Qgs
740
220
120
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.12 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
-120
- 480
-1.4
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = -100A, VGS = 0V, Note 1
PLUS247TM Outline
trr
QRM
IRM
300 ns
IF = - 60A, -di/dt = -100A/μs
3.3
25.6
μC
A
VR = -100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
IXTK120P20T
IXTX120P20T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-120
-100
-80
-60
-40
-20
0
-300
-250
-200
-150
-100
-50
VGS = -10V
VGS = -10V
- 7V
- 7V
- 6V
- 6V
- 5V
- 5V
- 4V
-2.5
0
0
-5
-10
-15
-20
0
0
0
-0.5
-1
-1.5
-2
-3
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 60A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
-120
-100
-80
-60
-40
-20
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = -10V
VGS = -10V
- 7V
- 6V
I D = -120A
I D = - 60A
- 5V
- 4V
-1
-2
-3
-4
-5
-6
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 60A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
-140
-120
-100
-80
-60
-40
-20
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = -10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
-40
-80
-120
-160
-200
-240
-280
TC - Degrees Centigrade
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXTK120P20T
IXTX120P20T
Fig. 8. Transconductance
Fig. 7. Input Admittance
-200
-180
-160
-140
-120
-100
-80
300
250
200
150
100
50
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
-60
-40
-20
0
0
-3.4
-3.8
-4.2
-4.6
-5
-5.4
-5.8
0
-20
-40
-60
-80
-100 -120 -140 -160 -180 -200 -220
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-300
-250
-200
-150
-100
-50
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
VDS = -100V
I D = - 60A
I G = -1mA
TJ = 125ºC
TJ = 25ºC
0
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
0
100
200
300
400
500
600
700
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
-
1,000
-100
C
iss
= 1 MHz
f
RDS(on) Limit
100µs
1ms
C
oss
10
-
10ms
TJ = 150ºC
TC = 25ºC
C
rss
Single Pulse
100ms
DC
-
1
-
-
-
-
1,000
1
10
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK120P20T
IXTX120P20T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
180
160
140
120
100
80
180
160
140
120
100
80
RG = 1Ω, VGS = -10V
DS = -100V
RG = 1Ω, VGS = -10V
V
VDS = -100V
TJ = 125ºC
I D = -120A
I D = - 60A
TJ = 25ºC
60
60
25
35
45
55
65
75
85
95
105
115
125
-60
-70
-80
-90
-100
-110
-120
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
700
600
500
400
300
200
100
0
350
70
65
60
55
50
45
40
260
t r
t
d(on) - - - -
TJ = 125ºC, VGS = -10V
DS = -100V
tf
t
d(off) - - - -
RG = 1Ω, VGS = -10V
DS = -100V
300
250
200
150
100
50
240
220
200
180
160
140
V
V
I D = -120A
I D = - 60A
I D = - 60A
I D = - 120A
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
500
1000
900
800
700
600
500
400
300
200
100
0
80
75
70
65
60
55
50
45
40
250
240
230
220
210
200
190
180
170
tf
t
d(off) - - - -
TJ = 125ºC, VGS = -10V
DS = -100V
450
400
350
300
250
200
150
100
50
tf
t
d(off) - - - -
RG = 1Ω, VGS = -10V
DS = -100V
V
V
I D = - 120A, - 60A
TJ = 125ºC
TJ = 25ºC
0
-60
-70
-80
-90
ID - Amperes
-100
-110
-120
1
2
3
4
5
6
7
8
9
10
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
IXTK120P20T
IXTX120P20T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_120P20T(A9) 10-25-11
相关型号：
IXTK140N30P
Power Field-Effect Transistor, 140A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
IXYS
IXTK160N20
Power Field-Effect Transistor, 160A I(D), 200V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
IXYS
IXTK160N20
Power Field-Effect Transistor, 160A I(D), 200V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
LITTELFUSE
IXTK20N150
Power Field-Effect Transistor, 20A I(D), 1500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明