IXTP3N50P [IXYS]
PolarHV Power MOSFET; PolarHV功率MOSFET
| 型号： | IXTP3N50P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV Power MOSFET |
| 文件： | 总5页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM
Power MOSFET
IXTA 3N50P
IXTP 3N50P
IXTY 3N50P
VDSS = 500 V
ID25 = 3.6 A
RDS(on) ≤ 2.0 Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Maximum Ratings
TO-220 (IXTP)
500
500
V
V
VGSS
VGSM
30
40
V
V
(TAB)
G
D
S
ID25
IDM
TC =25° C
TC = 25° C, pulse width limited by TJM
3.6
8
A
A
TO-263 (IXTA)
IAR
EAR
EAS
TC =25° C
TC =25° C
TC =25° C
3
10
180
A
mJ
mJ
G
TO-252 (IXTY)
G
S
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 20 Ω
,
10
V/ns
(TAB)
TC =25° C
70
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Md
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
TO-252
4
3
0.8
g
g
g
Features
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 50µA
500
V
V
Advantages
3.0
5.5
l
Easy to mount
Space savings
VGS
=
30 VDC, VDS = 0
100
nA
l
l
IDSS
VDS = VDSS
VGS = 0 V
5
50
µA
µA
High power density
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
2.0
Ω
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
DS99200E(12/05)
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
TO-263 (IXTA) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
2.5
3.5
S
Ciss
Coss
Crss
409
48
pF
pF
pF
6.1
td(on)
tr
td(off)
tf
15
15
38
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 20 Ω (External)
Qg(on)
Qgs
9.3
3.3
3.4
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
1.8° C/W
° C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
3
A
A
V
ISM
5
TO-220 (IXTP) Outline
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 3 A, -di/dt = 100 A/µs
400
ns
VR = 100 V, VGS = 0 V
TO-252 AA (IXTY) Outline
Dim. Millimeter
Inches
Min.
Min. Max.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25ºC
@ 25ºC
8
7
6
5
4
3
2
1
0
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
V
= 10V
8V
GS
V
= 10V
8V
GS
7V
7V
6V
6V
0
3
6
9
12
15
18 21
24 27
30
0
1
2
3
4
5
6
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on Norm alized to 0.5 ID25
)
Value vs. Junction Tem perature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
V
= 10V
8V
GS
V
= 10V
GS
7V
I
= 3A
D
6V
I
= 1.5A
D
5V
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
V
= 10V
GS
º
= 125 C
T
J
º
= 25 C
T
J
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125 150
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
º
= -40 C
T
J
º
25 C
º
125 C
T
= 125ºC
25ºC
J
-40ºC
4.5
5
5.5
6
6.5
7
0
1
2
3
4
5
6
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
9
V
I
= 250V
DS
8
7
6
5
4
3
2
1
0
= 1.5A
8
D
I
= 10mA
G
7
6
5
4
º
= 125 C
T
J
3
º
= 25 C
T
J
2
1
0
0
1
2
3
4
5
6
7
8
9
10
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
100
10
10
R
Limit
DS(on)
C
iss
25µs
100µs
1
C
C
oss
1ms
DC
10ms
T
= 150ºC
J
rs
f = 1MHz
T
= 25ºC
C
1
0.1
0
5
10
15
20
25
30
35
40
10
100
1000
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 13. Maximum Transient Thermal Resistance
10.0
1.0
0.1
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
相关型号：
IXTP3N60P
Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IXYS
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