IXTP3N60P [IXYS]

Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;


型号：	IXTP3N60P
厂家：	IXYS CORPORATION
描述：	Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网开关脉冲晶体管
文件：	总6页 (文件大小：268K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Polar^TM

Power MOSFET

IXTY3N60P

IXTA3N60P

IXTP3N60P

V_DSS= 600V

I_D25= 3A

R_DS(on) 2.9

N-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXTY)

D (Tab)

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

600

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

D (Tab)

E_AS

100

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

Tab = Drain

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Low Q_G

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier



F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

N/lb

Nm/lb.in

1.13 / 10

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 50μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

600



3.0

5.5

DC-DC Converters

Switch-Mode and Resonant-Mode



100 nA

A

Power Supplies

AC and DC Motor Drives



I_DSS





Discharge Circiuts in Lasers, Spark

Igniters, RF Generators

T_J= 125C

50 A





High Voltage Pulse Power

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

2.9



Applications

DS99449F(6/17)

IXTY3N60P IXTA3N60P

IXTP3N60P

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 20V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

2.2

3.4

C_iss

C_oss

C_rss

411

6.4

Q_g(on)

Q_gs

9.8

3.4

3.5

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 30 (External)

R_thJC

R_thCS

1.8 C/W

C/W

TO-220

0.50

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

I_S

V_GS= 0V

I_SM

V_SD

t_rr

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

1.5

I_F= 3A, -di/dt = 100A/μs, V_R= 100V

500

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

IXTY3N60P IXTA3N60P

IXTP3N60P

Fig. 2. Extended Output Characteristics @ T_J= 25^oC

Fig. 1. Output Characteristics @ T_J= 25^oC

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 10V

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 1.5A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125^oC

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 10V

= 3A

= 1.5A

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= 1.5A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs. Case Temperature

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.0

2.5

2.0

1.5

1.0

0.5

= 10V

T = 125 C

T = 25 C

-50

-25

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

T_C- Degrees Centigrade

I_D- Amperes

IXTY3N60P IXTA3N60P

IXTP3N60P

Fig. 8. Transconductance

Fig. 7. Input Admittance

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= - 40 C

= 10V

25 C

125 C

= 125 C

25 C

- 40 C

0.5

1.5

2.5

3.5

4.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

I_D- Amperes

V_GS- Volts

Fig. 10. Gate Charge

Fig. 9. Forward Voltage Drop of Intrinsic Diode

= 300V

= 1.5A

= 10mA

= 125 C

= 25 C

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V_SD- Volts

Q_G- NanoCoulombs

Fig. 11. Capacitance

Fig. 12. Forward-Bias Safe Operating Area

1,000

100

(on) Limit

iss

25μs

100μs

oss

1ms

10ms

= 150^oC

= 25^oC

rss

= 1 MHz

Single Pulse

0.1

100

1,000

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY3N60P IXTA3N60P

IXTP3N60P

Fig. 13. Maximum Transient Thermal Impedance

0.1

0.0001

0.001

0.01

0.1

Pulse Width - Second

IXYS REF: T_3N60P(2J) 6-20-17-A

IXTY3N60P IXTA3N60P

IXTP3N60P

TO-252 AA Outline

TO-263 Outline

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source

0.43 [11.0]

0

5.55MIN

OPTIONAL

EJECTOR

0.34 [8.7]

0.66 [16.6]

6.50MIN

1 - Gate

2,4 - Drain

3 - Source

0.20 [5.0]

0.10 [2.5]

0.12 [3.0]

0.06 [1.6]

6.40

2.28

3X b

3X b2

2.85MIN

1.25MIN

BOTTOM

VIEW

1 - Gate

2,4 - Drain

3 - Source

LAND PATTERN RECOMMENDATION

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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