IXTP90N15T [IXYS]
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode; 初步的技术资料沟槽栅功率MOSFET N沟道增强模式
| 型号： | IXTP90N15T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
IXTA90N15T
IXTH90N15T
IXTP90N15T
IXTQ90N15T
VDSS = 150V
Trench Gate
Power MOSFET
ID25
=
90A
RDS(on)
≤
20mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263
Symbol
Test Conditions
Maximum Ratings
G
S
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
150
150
V
V
(TAB)
(TAB)
(TAB)
TO-247 (IXTH)
VGSM
± 30
V
ID25
ILRMS
IDM
TC = 25°C *
90
75
250
A
A
A
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
IA
EAS
TC
TC
=
=
25°C
25°C
4
750
A
μJ
TO-220 (IXTP)
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
10
V/ns
W
G
D
S
455
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
TO-3P (IXTQ)
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
G
D
S
(TAB)
Md
FC
Mounting Torque(TO-220,TO-3P,TO-247)
1.13/10
Nm/lb.in.
N/lb.
Mounting Force (TO-263)
10..65/2.2..14.6
Weight
TO-263
2.5
g
G = Gate
D = Drain
TO-220
TO-3P
TO-247
3
5.5
6
g
g
g
S = Source
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
VGS = ± 20V, VDS = 0V
150
V
V
Applications
z DC-DC converters
z Battery chargers
2.5
4.5
± 200 nA
μA
z Switched-mode and resonant-mode
power supplies
IDSS
VDS = VDSS
VGS = 0V
5
z DC choppers
TJ = 150°C
250 μA
z AC motor control
z Uninterruptible power supplies
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
17
20 mΩ
DS99857(08/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
40
69
S
Ciss
Coss
Crss
4100
560
92
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
24
22
ns
ns
RG = 3.3Ω (External)
44
19
ns
ns
Qg(on)
Qgs
80
20
20
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
RthJC
RthCH
0.33 °C/W
TO-220
TO-3P, TO-263, TO-247
0.25
0.21
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
IS
VGS = 0V
90
A
A
ISM
VSD
trr
Repetitive
300
1.2
IF = 50A, VGS = 0V, Note 1
V
IF =45A, -di/dt = 250A/μs
110
ns
VR = 75V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
*: Current may be limited by external terminal current limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅ P
1
2
3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
∅P
3.55
5.89
3.65
6.40
.140
.144
Q
0.232 0.252
.170 .216
242 BSC
R
S
4.32
6.15 BSC
5.49
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain 3 - Source
© 2007 IXYS CORPORATION, All rights reserved
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
90
80
70
60
50
40
30
20
10
0
240
220
200
180
160
140
120
100
80
V
= 10V
V
= 10V
GS
GS
9V
8V
7V
9V
8V
7V
6V
6V
5V
60
40
5V
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
2
4
6
8
10
12
14
16
18
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 45A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
90
80
70
60
50
40
30
20
10
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
GS
V
= 10V
GS
8V
7V
I
= 90A
D
6V
5V
I
= 45A
D
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 45A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
4.5
4
90
80
70
60
50
40
30
20
10
0
V
= 10V
15V
GS
External Lead Current Limit
- - - -
T = 175ºC
J
3.5
3
2.5
2
1.5
1
T = 25ºC
J
0.5
-50
-25
0
25
50
75
100
125
150
175
0
40
80
120
160
200
240
ID - Amperes
TC - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Fig. 8. Transconductance
Fig. 7. Input Admittance
110
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
150ºC
T
J
= 150ºC
25ºC
- 40ºC
3
3.5
4
4.5
5
5.5
6
0
10 20 30 40 50 60 70 80 90 100 110 120
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
280
240
200
160
120
80
10
9
8
7
6
5
4
3
2
1
0
V
= 75V
DS
I
I
= 25A
D
G
= 10mA
T
J
= 150ºC
40
T
= 25ºC
1
J
0
0
10
20
30
40
50
60
70
80
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
1.4
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
f = 1 MHz
C
iss
C
C
oss
rss
10
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
© 2007 IXYS CORPORATION, All rights reserved
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
32
30
28
26
24
22
20
18
16
14
12
31
29
27
25
23
21
19
17
15
13
R
= 3.3
R = 3.3
G
Ω
Ω
G
V
V
= 10V
= 75V
V
V
= 10V
GS
GS
DS
T = 25ºC
J
= 75V
DS
I
= 90A
D
T = 125ºC
J
I
= 45A
45
D
25
35
55
65
75
85
95
105 115 125
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
ID - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
100
33
32
31
30
29
28
27
26
25
24
23
23
65
t f
td(off)
- - - -
V = 10V
GS
t r
td(on)
- - - -
TJ = 125ºC, V = 10V
90
80
70
60
50
40
30
20
10
0
22
21
20
19
18
17
16
60
55
50
45
40
35
30
R
G
= 3.3
,
Ω
GS
V
= 75V
V
= 75V
DS
DS
I
= 45A
D
I
= 90A
D
I
= 45A
D
I
= 90A
D
2
4
6
8
10
12
14
16
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
22
21
20
19
18
17
16
60
55
50
45
40
35
30
90
80
70
60
50
40
30
20
10
0
110
100
90
tf
R
td(off)
t f
td(off)
- - - -
- - - -
VGS = 10V
= 3.3
,
T = 125ºC, VGS = 10V
J
Ω
G
TJ = 125ºC
VDS = 75V
VDS = 75V
80
I
= 45A, 90A
D
T = 25ºC
J
70
60
TJ = 25ºC
50
TJ = 125ºC
40
30
20
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
RG - Ohms
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_90N15T(5G)8-08-07-A
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