IXTQ200N075T [IXYS]

Preliminary Technical Information Trench Gate Power MOSFET; 初步的技术资料沟槽栅功率MOSFET
IXTQ200N075T
元器件型号: IXTQ200N075T
生产厂家: IXYS CORPORATION    IXYS CORPORATION
描述和应用:

Preliminary Technical Information Trench Gate Power MOSFET
初步的技术资料沟槽栅功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 栅 局域网
PDF文件: 总5页 (文件大小:190K)
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型号参数:IXTQ200N075T参数

IXTQ200N10T

TrenchMVTM Power MOSFET

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141 IXYS

IXTQ22N50P

PolarHVTM Power MOSFET

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83 IXYS

IXTQ22N50P

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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2 LITTELFUSE

IXTQ22N50P

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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3 IXYS

IXTQ22N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode

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36 IXYS

IXTQ23N60Q

Power MOSFETs Q-Class

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164 IXYS

IXTQ240N055T

TrenchMV Power MOSFET

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12 IXYS

IXTQ24N55Q

Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 IXYS

IXTQ24N55Q

Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 LITTELFUSE

IXTQ250N075T

TrenchMV Power MOSFET

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24 IXYS

IXTQ26N50P

PolarHVTM Power MOSFET

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77 IXYS

IXTQ26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 IXYS

IXTQ26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 LITTELFUSE

IXTQ26P20P

P-Channel Enhancement Mode Avalanche Rated

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43 IXYS

IXTQ26P20P

Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 IXYS