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元器件品牌
IXTQ200N075T
[IXYS]
Preliminary Technical Information Trench Gate Power MOSFET; 初步的技术资料沟槽栅功率MOSFET
元器件型号:
IXTQ200N075T
生产厂家:
IXYS CORPORATION
描述和应用:
Preliminary Technical Information Trench Gate Power MOSFET
初步的技术资料沟槽栅功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 栅 局域网
PDF文件:
总5页 (文件大小:190K)
下载文档:
下载PDF数据表文档文件
型号参数:IXTQ200N075T参数
查看货源
IXTQ200N10T
TrenchMVTM Power MOSFET
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IXTQ22N50P
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IXTQ22N50P
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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LITTELFUSE
IXTQ22N50P
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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156
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IXYS
IXTQ22N60P
PolarHVTM Power MOSFET N-Channel Enhancement Mode
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156
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IXYS
IXTQ23N60Q
Power MOSFETs Q-Class
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156
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164
IXYS
IXTQ240N055T
TrenchMV Power MOSFET
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12
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IXTQ24N55Q
Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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0
IXYS
IXTQ24N55Q
Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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: Undefined variable $rtag in
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156
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0
LITTELFUSE
IXTQ250N075T
TrenchMV Power MOSFET
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156
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IXTQ26N50P
PolarHVTM Power MOSFET
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156
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77
IXYS
IXTQ26N60P
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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: Undefined variable $rtag in
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0
IXYS
IXTQ26N60P
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
LITTELFUSE
IXTQ26P20P
P-Channel Enhancement Mode Avalanche Rated
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156
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IXYS
IXTQ26P20P
Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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0
IXYS
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