IXTT60N10 [IXYS]
Power Field-Effect Transistor, 80A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN;
| 型号： | IXTT60N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 80A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiPerFETTM
PowerMOSFETs
IXTH 60N10
IXTT 60N10
VDSS
ID25
= 100 V
= 60 A
RDS(on) = 20 mΩ
N-ChannelEnhancementMode
Symbol Testconditions
Maximum ratings
TO-247AD(IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
100
100
V
V
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
ID(RMS)
IDM
T
= 25°C MOSFET chip capability
80
75
320
80
A
ECxternal lead current limit
A
A
A
TO-268 (IXTT) Case Style
T
= 25°C, pulse width limited by TJM
IAR
TCC = 25°C
EAR
EAS
T
= 25°C
45
mJ
J
TCC = 25°C
1.5
G
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TJ
TC = 25°C
300
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
z
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
TL
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
300
1.13/10
6
°C
Nm/lb.in.
g
z
z
z
Md
Weight
TO-264
z
z
Symbol
TestConditions
Characteristic Values
Advantages
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = 20 VDC, VDS = 0
100
V
V
z
Easy to mount
Space savings
High power density
z
2.0
4.0
z
100
nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
250
µA
µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
20 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99069(7/03)
© 2003 IXYS All rights reserved
IXTH 60N10
IXTT 60N10
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
30
45
S
Ciss
Coss
Crss
3200
510
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
180
td(on)
tr
td(off)
tf
20
20
70
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
RG = 3.3 Ω (External)
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
110
18
nC
nC
nC
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
48
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.42
K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247)
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
Source-Drain Diode
Ratings and Characteristics
6.15 BSC
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-268 Outline
VGS = 0V
60
A
A
V
ISM
Repetitive; pulse width limited by TJM
240
1.5
VSD
IF = I , VGS = 0 V,
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 30A, -di/dt = 100 A/µs, VR = 100V
150
3
ns
Qrr
µC
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Min Recommended Footprint
IXYSreservestherighttochangelimits,testconditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
相关型号：
IXTT60N25
Power Field-Effect Transistor, 60A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXYS
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