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IXTV26N60P [IXYS]

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN;
IXTV26N60P
型号： IXTV26N60P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN

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PolarHVTM  
Power MOSFET  
IXTH26N60P  
IXTQ26N60P  
IXTT26N60P  
IXTV26N60P  
IXTV26N60PS  
VDSS = 600  
ID25 = 26  
RDS(on) ≤ 270 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TO-3P (IXTQ)  
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
26  
65  
A
A
D (TAB)  
D (TAB)  
D (TAB)  
TC = 25°C, pulse width limited by TJM  
TO-268 (IXTT)  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
13  
40  
A
mJ  
J
EAR  
EAS  
1.2  
G
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
10  
V/ns  
PLUS220 (IXTV)  
PD  
TC = 25°C  
460  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
PLUS220SMD (IXTV_S)  
Md  
Mounting torque (TO-3P&TO-247)  
Mounting force (PLUS220)  
1.13/10 Nm/lb.in.  
FC  
11..65/2.5..15  
N/lb  
Weight  
TO-3P  
TO-247  
TO-268  
PLUS220 & PLUS220SMD  
5.5  
6.0  
5.0  
4.0  
g
g
g
g
G
S
D (TAB)  
D = Drain  
TAB = Drain  
G = Gate  
S = Source  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Features  
z Fast Recovery diode  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ±30 V, VDS = 0 V  
600  
V
V
z Unclamped Inductive Switching (UIS)  
3.0  
5.0  
rated  
z International standard packages  
z Low package inductance  
- easy to drive and to protect  
±100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
10  
μA  
μA  
TJ = 125°C  
250  
Advantages  
z
Easy to mount  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
270 mΩ  
z
Space savings  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
z
High power density  
DS99376E(12/06)  
© 2006 IXYS All rights reserved  
IXTH26N60P IXTQ26N60P  
IXTT26N60P IXTV26N60P IXTV26N60PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
16  
26  
S
Ciss  
Coss  
Crss  
4150  
400  
27  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
25  
27  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25, ID = 0.5 ID25  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
72  
27  
24  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
TO-3P, PLUS220 & TO-247  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
26  
78  
A
ISM  
VSD  
trr  
Repetitive  
A
V
n
IF = IS, VGS = 0 V, pulse test  
IF = 26A, -di/dt = 100 A/μs  
1.5  
500  
Characteristic Curves  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
@ 25  
º
C
º
C
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
V
10V  
7V  
V
= 10V  
7V  
GS =  
24  
20  
16  
12  
8
GS  
6V  
6V  
4
5V  
5V  
5
0
0
0
3
6
9
12 15 18 21 24 27 30  
0
1
2
3
4
6
7
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXTH26N60P IXTQ26N60P  
IXTT26N60P IXTV26N60P IXTV26N60PS  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
3.2  
24  
20  
16  
12  
8
V
= 10V  
7V  
GS  
V
= 10V  
GS  
2.8  
2.4  
2
6V  
I
= 26A  
D
1.6  
1.2  
0.8  
0.4  
I
= 13A  
D
5V  
12  
4
0
0
2
4
6
8
10  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
30  
27  
24  
21  
18  
15  
12  
9
3.2  
2.8  
2.4  
2
V
GS  
= 10V  
º
T = 125 C  
J
1.6  
1.2  
0.8  
6
º
T = 25 C  
J
3
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
10  
20  
30  
40  
50  
60  
I D - Amperes  
TC - Degrees Centigrade  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = -40  
º
C
C
25  
125  
º
º
C
º
T = 125 C  
J
25  
º
C
C
-40  
º
0
0
0
5
10 15 20 25 30 35 40 45 50  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
VG S - Volts  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXTH26N60P IXTQ26N60P  
IXTT26N60P IXTV26N60P IXTV26N60PS  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
V
= 300V  
9
8
7
6
5
4
3
2
1
0
DS  
I
I
= 13A  
D
G
= 10mA  
º
T = 125 C  
J
º
T = 25 C  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 11. Capacitance  
10000  
1000  
100  
f = 1MHz  
C
iss  
C
oss  
C
rss  
15  
10  
0
5
10  
20  
25  
30  
35  
40  
VD S - Volts  
Fig. 12. Maxim um Transient Therm al Resistance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH26N60P IXTQ26N60P  
IXTT26N60P IXTV26N60P IXTV26N60PS  
TO-3P (IXTQ) Outline  
TO-268 (IXTT) Outline  
TO-247 (IXTH) Outline  
1
2
3
Terminals: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
PLUS220SMD (IXFV_S) Outline  
PLUS220 (IXTV) Outline  
© 2006 IXYS All rights reserved  

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