IXYH75N65C3H1 [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | IXYH75N65C3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Sonic
Diode
IXYH75N65C3H1
VCES = 650V
IC110 = 75A
VCE(sat) 2.3V
tfi(typ) = 50ns
Extreme Light Punch through
IGBT for 20-60kHz Switching
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
Tab
=
E
IC25
ILRMS
TC = 25°C (Chip Capability)
Terminal Current Limit
170
160
A
A
G = Gate
C
Collector
E = Emitter
Tab = Collector
IC110
IF110
TC = 110°C
TC = 110°C
75
62
A
A
ICM
TC = 25°C, 1ms
360
A
IA
EAS
TC = 25°C
TC = 25°C
30
A
300
mJ
SSOA
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
ICM = 150
A
μs
W
Features
(RBSOA)
VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
8
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
(SCSOA)
RG = 82, Non Repetitive
PC
TC = 25°C
750
Avalanche Rated
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Sonic Diode
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
High Power Density
Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in
g
Weight
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
50 A
mA
100 nA
TJ = 150C
TJ = 150C
4
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
1.8
2.2
2.3
V
V
© 2013 IXYS CORPORATION, All Rights Reserved
DS100573A(7/14)
IXYH75N65C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXYH) Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
25
42
S
Cies
Coes
Cres
3450
307
70
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
123
24
nC
nC
nC
IC = 75A, VGE = 15V, VCE = 0.5 • VCES
60
td(on)
tri
27
67
ns
ns
1 - Gate
2,4 - Collector
3 - Emitter
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
2.8
93
mJ
ns
VCE = 400V, RG = 3
50
ns
Note 2
Eof
1.0
mJ
f
td(on)
tri
26
57
ns
ns
Inductive load, TJ = 150°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
3.3
108
58
mJ
ns
VCE = 400V, RG = 3
ns
Note 2
Eoff
1.3
mJ
RthJC
RthCS
0.20 °C/W
°C/W
0.21
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 50A, VGE = 0V, Note 1
2.5
V
V
TJ = 150°C
1.8
IRM
trr
TJ = 150°C
TJ = 150°C
45
150
A
ns
IF = 50A, VGE = 0V, -diF/dt = 900A/μs,
VR = 300V
RthJC
0.45 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYH75N65C3H1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
V
= 15V
V
= 15V
13V
GE
GE
140
120
100
80
12V
11V
10V
13V
12V
11V
10V
9V
60
8V
7V
9V
8V
40
20
7V
6V
6V
5V
0
0
0
1
2
3
4
0
5
10
15
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15V
GE
140
120
100
80
V
= 15V
GE
13V
12V
11V
10V
9V
I
= 150A
C
8V
7V
I
= 75A
C
60
40
6V
5V
I
= 37.5A
C
20
0
-50
-25
0
25
50
75
100
125
150
175
0
1
2
3
4
5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
120
100
80
60
40
20
0
8
7
6
5
4
3
2
1
0
T
J
= 25ºC
I
= 150A
75A
C
T
J
= 150ºC
25ºC
- 40ºC
37.5A
6
7
8
9
10
11
12
13
14
15
2
3
4
5
6
7
8
9
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH75N65C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
70
60
50
40
30
20
10
0
16
14
12
10
8
T
J
= - 40ºC
V
= 325V
CE
I
I
= 75A
C
G
= 10mA
25ºC
150ºC
6
4
2
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
180
200
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
res
60
40
T
J
= 150ºC
C
R
= 3
Ω
G
= 1 MHz
5
f
20
dv / dt < 10V / ns
10
0
0
10
15
20
25
30
35
40
100
200
300
400
500
600
700
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
aasss
0.5
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH75N65C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.5
3
8
7
6
5
4
3
2
1
2.4
2
6
5
4
3
2
1
0
E
R
E
on - - - -
E
E
on - - - -
off
off
= 3
V
Ω
= 15V
G
GE
T
J
= 150ºC , V = 15V
GE
V
= 400V
CE
V
= 400V
CE
2.5
2
T
J
= 150ºC
1.6
1.2
0.8
0.4
0
I
= 80A
C
T
J
= 25ºC
1.5
1
0.5
0
I
= 40A
C
20
25
30
35
40
45
50
55
60
65
70
75
80
3
6
9
12
15
18
21
24
27
30
33
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
110
100
90
450
400
350
300
250
200
150
100
50
2.6
2.2
1.8
1.4
1.0
0.6
0.2
6.5
5.5
4.5
3.5
2.5
1.5
0.5
t f i
t
d(off) - - - -
E
E
on - - - -
off
= 3
T
J
= 150ºC, V = 15V
GE
R
VGE = 15V
Ω
G
V
= 400V
VCE = 400V
CE
80
I
= 80A
C
70
I
= 80A
C
I
= 40A
C
60
50
IC = 40A
40
30
3
6
9
12
15
18
21
24
27
30
33
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
100
90
80
70
60
50
40
30
20
125
120
115
110
105
100
95
100
90
80
70
60
50
40
30
20
10
160
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
150
140
130
120
110
100
90
R
G
= 3 , V = 15V
R
G
= 3 , V = 15V
Ω
Ω
GE
GE
V
= 400V
V
= 400V
CE
CE
I
= 80A
C
T
J
= 150ºC
I
= 40A
C
T
J
= 25ºC
90
80
70
85
20
25
30
35
40
45
50
55
60
65
70
75
80
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH75N65C3H1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
140
120
100
80
29
28
27
26
25
24
23
22
180
160
140
120
100
80
100
90
80
70
60
50
40
30
20
10
t r i
t r i
t
d(on) - - - -
R
G
= 3 , V = 15V
Ω
GE
T = 150ºC, V = 15V
J
GE
T = 25ºC
J
I
= 80A
C
V
= 400V
CE
V
= 400V
CE
I
= 40A
C
T = 150ºC
J
60
60
40
40
20
20
0
0
20
25
30
35
40
45
50
55
60
65
70
75
80
3
6
9
12
15
18
21
24
27
30
33
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
Fig. 21. Maximum Peak Load Current vs. Frequency
100
90
80
70
60
50
40
30
20
10
0
160
140
120
100
80
31
30
29
28
27
26
25
24
23
t r i
t
d(on) - - - -
Triangular Wave
R
G
= 3 , V = 15V
Ω
GE
Square Wave
V
= 400V
CE
I
= 80A
C
T = 150ºC
J
60
T
C
= 75ºC
V
V
= 400V
= 15V
CE
GE
40
I
= 40A
C
R
G
= 3ꢀ
20
D = 0.5
0
25
50
75
100
125
150
10
100
1,000
TJ - Degrees Centigrade
- KiloHertzs
fmax
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH75N65C3H1
Fig. 23. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 22. Typ. Forward characteristics
10
8
100
80
60
40
20
0
T
= 150ºC
= 300V
VJ
V
R
I
F
= 100A
TVJ = 25ºC
TVJ = 150ºC
6
50A
25A
4
2
0
0
0.5
1
1.5
2
2.5
3
400
600
800
1000
1200
1400
1600
VF - [V]
-diF/ dt [A/µs]
Fig. 25. Typ. Recovery Time trr vs. -diF/dt
Fig. 24. Typ. Peak Reverse Current IRM vs. -diF/dt
350
300
250
200
150
100
50
80
70
60
50
40
30
20
TVJ = 150ºC
R = 300V
TVJ = 150ºC
I
F
= 100A
50A
I
F
= 100A
V
VR = 300V
50A
25A
25A
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
diF/dt [A/µs]
-diF/dt [A/µs]
Fig. 27. Maximum Transient Thermal Impedance
Fig. 26. Typ. Recovery Energy Erec vs. -diF/dt
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
TVJ = 150ºC
VR = 300V
I
F
= 100A
0.1
50A
25A
0.01
400
600
800
1000
1200
1400
1600
0.0001
0.001
0.01
0.1
1
10
-diF/dt [A/µs]
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXY_75N65C3(71-R47) 9-23-13
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