IXZ316N60 [IXYS]
Z-MOS RF Power MOSFET; Z- MOS RF功率MOSFET
| 型号： | IXZ316N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Z-MOS RF Power MOSFET |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXZ316N60
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
NꢁChannelꢀEnhancementꢀModeꢀSwitchꢀModeꢀRFꢀMOSFETꢀ
LowꢀCapacitanceꢀZꢁMOSTMꢀMOSFETꢀProcessꢀ
OptimizedꢀforꢀRFꢀOperationꢀ
VDSS
ꢀ
=ꢁ 600ꢁVꢁ
IdealꢀforꢀClassꢀC,ꢀD,ꢀ&ꢀEꢀApplicationsꢀ
ID25ꢀ
=ꢁ
18ꢁAꢁ
RDS(on)ꢀ ≤ꢁ
0.47ꢁꢀꢁ
Symbolꢁ
VDSS
VDGR
VGS
VGSM
ID25
IDM
ARꢀ
TestꢁConditionsꢁ
TJꢀ=ꢀ25°Cꢀtoꢀ150°Cꢀꢀ
TJꢀ=ꢀ25°Cꢀtoꢀ150°C;ꢀRGSꢀ=ꢀ1ꢀMꢀꢀꢀ
Continuousꢀ
MaximumꢁRatingsꢁꢁ
ꢀ
600ꢀꢀ
600ꢀꢀ
Vꢀ
V
PDCꢀ
=ꢁ 880ꢁWꢁ
ꢀ
ꢀ
±20ꢀꢀ
±30ꢀꢀ
18ꢀꢀ
Vꢀ
Vꢀ
Aꢀ
Aꢀ
Aꢀ
Transientꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
Tcꢀ=ꢀ25°C,ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJMꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
90ꢀꢀ
I
18ꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
EAR
ꢁ
ꢀ
TBDꢀꢀ mJꢀ
5ꢀꢀꢀ V/nsꢀ
ISꢀ≤ꢁIDM,ꢀdi/dtꢀ≤ꢁꢁ100A/ꢂs,ꢀVDDꢀ≤ꢀVDSS,ꢀꢀ
Tjꢀ≤ꢀ150°C,ꢀRGꢀ=ꢀ0.2ꢀꢀꢀ
dv/dtꢁꢁ
ISꢀ=ꢀ0ꢀ
>200ꢀꢀ V/nsꢀ
DRAIN
ꢀ
P
DCꢀ
PDHS
DAMBꢀ
RthJC
RthJHS
880ꢀꢀ
440ꢀꢀ
3.0ꢀ
Wꢀ
Wꢀ
Wꢀ
GATE
Tcꢀ=ꢀ25°C,ꢀDerateꢀ4.4W/°Cꢀaboveꢀ25°Cꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀ
P
ꢀ
ꢀ
ꢀ
0.17ꢀ C/Wꢀ
0.34ꢀꢀ C/Wꢀ
SG1 SG2
SD1
SD2
ꢀ
Featuresꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
•ꢁ IsolatedꢀSubstrateꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
−ꢁ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢁ excellentꢀthermalꢀtransferꢀ
ꢀ
ꢀ
min.ꢁ
600ꢀꢀ
typ.ꢁ
max.ꢁ ꢀ
ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ4ꢀmaꢀ
−ꢁ Increasedꢀtemperatureꢀandꢀpowerꢀ
VDSS
VGS(th)
IGSS
IDSS
ꢀ
ꢀ
Vꢀ
Vꢀ
cyclingꢀcapabilityꢀꢀꢀ
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂΑꢀ
ꢀ
3.2ꢀ
4.0ꢀ
5.5ꢀ
•ꢁ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢁ Lowꢀgateꢀchargeꢀandꢀcapacitancesꢀ
−ꢁ easierꢀtoꢀdriveꢀ
VGSꢀ=ꢀ±20ꢀVDC,ꢀVDSꢀ=ꢀ0ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
±100ꢀꢀ
nAꢀ
VDSꢀ=ꢀ0.8VDSSꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=ꢀ25Cꢀ
VGS=0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=125Cꢀ
ꢀ
50ꢀ
1ꢀ
ꢂAꢀ
mAꢀ
−ꢁ fasterꢀswitchingꢀ
•ꢁ LowꢀRDS(on)
ꢀ
•ꢁ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ
VGSꢀ=ꢀ15ꢀV,ꢀIDꢀ=ꢀ0.5ID25
Pulseꢀtest,ꢀtꢀ≤ꢀ300ꢂS,ꢀdutyꢀcycleꢀdꢀ≤ꢀ2%ꢀꢀ
ꢀ
R
DS(on)ꢀ
0.44ꢀ
0.47ꢀ
ꢀꢀ
•ꢁ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀ
hazardousꢀmaterialsꢀꢀ
VDSꢀ=ꢀ50V,ꢀIDꢀ=ꢀ0.5ID25,ꢀpulseꢀtestꢀ
gfsꢀ
TJꢀ
4.0ꢀ
5.2ꢀ
ꢀ
ꢀ
Sꢀ
ꢀ
Advantagesꢁ
ꢀ
ꢁ55ꢀ
+175ꢀꢀ
°Cꢀꢀꢀ
°Cꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀꢀ
gꢀ
•ꢁ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢁ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢁ Highꢀpowerꢀdensityꢀ
ꢀ
TJMꢀ
ꢀ
ꢀ
175ꢀꢀ
ꢀ
ꢀ
ꢀ
Tstg
ꢀ
ꢁ55ꢀ
+ꢀ175ꢀ
1.6mm(0.063ꢀin)ꢀfromꢀcaseꢀforꢀ10ꢀsꢀ
ꢀ
TLꢀ
ꢀ
ꢀ
300ꢀꢀ
3.5ꢀꢀ
ꢀ
ꢀ
Weightꢀ
IXZ316N60
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
min.ꢁ
typ.ꢁ
max.ꢁ
ꢀ
RGꢀ
Cissꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1ꢀ
ꢀ
ꢀꢀ
pFꢀ
pFꢀ
1930ꢀ
160ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSS(max),ꢀꢀ
fꢀ=ꢀ1ꢀMHzꢀ
Coss
ꢀ
ꢀ
ꢀ
Crss
ꢀ
ꢀ
16ꢀ
33ꢀꢀ
4ꢀꢀ
ꢀ
ꢀ
ꢀ
pFꢀ
pFꢀ
nsꢀ
BackꢀꢀMetalꢀtoꢀanyꢀPinꢀ
ꢀ
C
strayꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Td(on)
ꢀ
ꢀ
VGSꢀ=ꢀ15ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀIDMꢀꢀ
RGꢀ=ꢀ1ꢀꢀꢀ(External)ꢀꢀ
Tonꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
4ꢀꢀ
4ꢀꢀ
6ꢀꢀ
ꢀ
ꢀ
ꢀ
nsꢀ
nsꢀ
nsꢀ
Td(off)
Toffꢀ
ꢀ
SourceꢀDrainꢁDiode
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
Symbolꢁ
TestꢁConditionsꢀ
min.ꢁ
typ.ꢁ
max.ꢁ
ꢀ
VGSꢀ=ꢀ0ꢀV
ꢀ
ISꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
18ꢀ
Aꢀ
Aꢀ
Vꢀ
Repetitive;ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJM
ꢀ
ISM
ꢀ
108ꢀ
1.5ꢀ
IFꢀ=ꢀIs,ꢀVGS=0ꢀV,ꢀPulseꢀtest,ꢀtꢀ≤ꢀ300ꢂs,ꢀdutyꢀcycleꢀ
≤2%ꢀ
VSD
ꢀ
ꢀ
Trrꢀ
ꢀ
200ꢀ
ꢀ
nsꢀ
CAUTION:ꢀOperationꢀatꢀorꢀaboveꢀtheꢀMaximumꢀRatingsꢀvaluesꢀmayꢀimpactꢀdeviceꢀreliabilityꢀorꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.ꢀ
ꢀ
Informationꢀinꢀthisꢀdocumentꢀisꢀbelievedꢀtoꢀbeꢀaccurateꢀandꢀreliable. IXYSRFꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀinformationꢀpubꢁ
lishedꢀinꢀthisꢀdocumentꢀatꢀanyꢀtimeꢀandꢀwithoutꢀnotice.ꢀ
Forꢀdetailedꢀdeviceꢀmountingꢀandꢀinstallationꢀinstructions,ꢀseeꢀtheꢀ“Device Installation & Mounting Instructions”ꢀtechnicalꢀnoteꢀonꢀtheꢀ
IXYSRFꢀwebꢀsiteꢀat;ꢀꢀ
ꢀ
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdfꢀ
IXYSꢀRFꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀlimits,ꢀtestꢀconditionsꢀandꢀdimensions.ꢀ
IXYSꢀRFꢀMOSFETSꢀareꢀcoveredꢀbyꢀoneꢀorꢀmoreꢀofꢀtheꢀfollowingꢀU.S.ꢀpatents:ꢀ
4,835,592ꢀ
5,034,796ꢀ
5,381,025ꢀ
6,731,002ꢀ
4,860,072ꢀ
5,049,961ꢀ
5,640,045ꢀ
4,881,106ꢀ
5,063,307ꢀ
6,404,065ꢀ
4,891,686ꢀ
5,187,117ꢀ
6,583,505ꢀ
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5,237,481ꢀ
6,710,463ꢀ
5,017,508ꢀ
5,486,715ꢀ
6,727,585ꢀ
IXZ316N60
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Fig.ꢀ1ꢀ
Fig.ꢀ2ꢀ
TypicalꢁOutputꢁCharacteristics
TypicalꢁTransferꢁCharacteristics
9Vꢀꢁꢀ12Vꢀ
20
15
10
5
50
45
40
35
30
25
20
15
10
5
7Vꢀ
6.5Vꢀ
6Vꢀ
5.5Vꢀ
0
5Vꢀ
0
4
0
20
40
60
80
100
120
5
6
7
8
9
10
11
12
VDS,ꢀDrainꢁtoꢁSourceꢀVoltageꢀ(V)
VGS,ꢀGateꢁtoꢀSourceꢀVoltageꢀ(V)
Fig.ꢀ3ꢀ
Fig.ꢀ4ꢀ
GateꢁChargeꢁvs.ꢁGateꢀtoꢀSourceꢁVoltage
VDSꢁ=ꢁ300V,ꢁꢁIDꢁ=ꢁ9A,ꢁꢁIG=ꢁ3mA
ExtendedꢁTypicalꢁOutputꢁCharacteristics
80
16
14
12
10
8
Topꢁꢁꢁꢁꢁꢁꢁꢁꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
10Vꢁꢀꢁ12Vꢁ
9Vꢁ
8Vꢁ
7.5Vꢁ
ꢁ
7Vꢁ
6.5Vꢁ
6Vꢁ
5.5Vꢁ
60
40
20
0
Bottomꢁ
6
4
2
0
0
20
40
60
80
100
120
0
20
40
60
80
VDS,ꢀDrainꢁtoꢁSourceꢀVoltageꢀ(V)
GateꢀChargeꢀ(nC)
Fig.ꢀ5ꢀ
VD S ꢁvs.ꢁCapacitance
10000
Cissꢀ
1000
100
10
C
ossꢀ
Crssꢀ
1
0
60
120
180
240
300
360
420
480
VDSꢀVoltageꢀ(V)
IXZ316N60
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Fig.ꢀ6ꢀPackageꢀDrawingꢀ
Sourceꢀ
Sourceꢀ
Gateꢀ
Drainꢀ
Sourceꢀ
Sourceꢀ
Docꢀ#dsIXZ316N60ꢀREVꢀ08/09ꢀ
©ꢀ2009ꢀIXYSꢀRFꢀꢀ
An IXYS Companyꢀ
2401ꢀResearchꢀBlvd.,ꢀSuiteꢀ108ꢀ
FortꢀCollins,ꢀCOꢀꢀUSAꢀ80526ꢀ
970ꢁ493ꢁ1901ꢀFax:ꢀ970ꢁ493ꢁ1903ꢀ
Email:ꢀsales@ixyscolorado.comꢀ
Web:ꢀhttp://www.ixyscolorado.com
ꢀ
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