L104 [IXYS]
Phase Control Thyristors; 相位控制晶闸管
| 型号： | L104 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Phase Control Thyristors |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS 8
Phase Control Thyristors
VRRM = 800-1200 V
IT(RMS) = 25 A
IT(AV)M = 16 A
2
TO-64
VRSM
VDSM
VRRM
VDRM
Type
1
2
3
V
V
3
900
1300
800
1200
CS 8-08io2
CS 8-12io2
1
M5
1 = Anode, 2 = Cathode, 3 = Gate
Symbol
Test Conditions
Maximum Ratings
Features
●
Thyristor for line frequencies
International standard package
IT(RMS)
IT(AV)M
TVJ = TVJM
Tcase = 85°C; 180° sine
25
16
A
A
●
JEDEC TO-64
Planar glassivated chip
Long-term stability of blocking
●
ITSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
250
270
A
A
●
currents and voltages
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
220
A
A
Applications
●
Motor control
Power converter
AC power controller
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
310
306
A2s
A2s
●
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
200
A2s
A2s
Advantages
●
Space and weight savings
Simple mounting
Improved temperature and power
(di/dt)cr
TVJ = TVJM
repetitive, IT = 48 A
150
A/ms
●
f = 50Hz, tP =200ms
VD = 2/3 VDRM
IG = 0.2 A
●
cycling
non repetitive, IT = IT(AV)M
VDR = 2/3 VDRM
500
A/ms
V/ms
diG/dt = 0.2 A/ms
(dv/dt)cr
PGM
TVJ = TVJM
;
1000
RGK = ¥; method 1 (linear voltage rise)
Dimensions in mm (1 mm = 0.0394")
TVJ = TVJM
IT = IT(AV)M
tP = 30 ms
tP = 300 ms
10
5
0.5
W
W
W
PG(AV)
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
Md
Mounting torque
2.5
22
Nm
lb.in.
Weight
6
g
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 - 3
© 2000 IXYS All rights reserved
CS 8
Symbol
IR, ID
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
IT = 33 A; TVJ = 25°C
£
£
3
1.6
1.0
mA
V
VT
VT0
rT
For power-loss calculations only (TVJ = 125°C)
V
18 mW
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
£
£
£
£
2.5
3.5
30 mA
50 mA
V
V
T
VJ = -40°C
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
£
£
0.2
1
V
mA
IL
TVJ = 25°C; tP = 10 ms
£
100 mA
IG = 0.09 A; diG/dt = 0.09 A/ms
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
£
80 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.09 A; diG/dt = 0.09 A/ms
2
ms
ms
tq
TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms typ.
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
60
RthJC
RthJH
DC current
DC current
1.5 K/W
2.5 K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. acceleration, 50 Hz
1.55 mm
1.55 mm
50 m/s2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
4
102
s
50
typ. lim.
V
A
C
B
40
3
VG
tgd
IT
101
100
10-1
B
30
20
10
0
B
2
lim.
typ.
TVJ= 125°C
TVJ= 25°C
1
A
IGD: TVJ
= 25°C
IGD: TVJ=125°C
0
0
25
50 mA 75
IG
10-2
10-1
100
101
0.0
0.5
1.0
1.5
VT
2.0
A
V
t
Fig. 1 Gate voltage and gate current
Triggering:
Fig. 2 Gate controlled delay time tgd
Fig. 3 On-state characteristics
A = no; B = possible; C = safe
2 - 3
© 2000 IXYS All rights reserved
CS 8
300
1000
20
A
VR = 0 V
2
A s
A
250
600
400
15
IT(AV)M
50Hz, 80%VRRM
I2t
ITSM
200
150
100
50
TVJ = 45°C
TVJ = 125°C
10
5
TVJ = 45°C
200
TVJ = 125°C
0
100
0
10-3
10-2
10-1
100
101
1
2
3
4
5 6 7 10
0
50
100
ms
°C
150
s
Tcase
t
t
Fig. 4 Surge overload current
ITSM: crest value, t: duration
Fig. 5 I2t versus time (1-10 ms)
Fig. 6 Maximum forward current at
case temperature 180° sine
40
W
RthJA
:
2.8 K/W
3.2 K/W
3.6 K/W
3.6 K/W
5.2 K/W
7 K/W
30
PT
20
DC
180° sin
120°
60°
30°
10
0
0
0
5
10
15
20
IT(AV)M
25 A
50
100
Tamb
°C 150
Fig. 7 Power dissipation versus on-state current and ambient temperature
RthJH for various conduction angles d:
3.5
K/W
3.0
d
RthJH (K/W)
d = 30°
d = 60°
d = 120°
DC
180°
120°
60°
2.5
d = 180°
2.79
2.95
3.17
3.32
d = DC
2.5
ZthJH
30°
2.0
1.5
1.0
0.5
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
5
6
0.252
0.333
0.5
0.833
0.416
0.166
0.005
0.0225
0.145
0.43
2.75
23
10-3
10-2
10-1
100
101
102
103
s
t
Fig. 8 Transient thermal impedance junction to heatsink
3 - 3
© 2000 IXYS All rights reserved
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