L532 [IXYS]

IGBT phaseleg in ISOPLUS i4-PAC; 在ISOPLUS I4 -PAC IGBT phaseleg


型号：	L532
厂家：	IXYS CORPORATION
描述：	IGBT phaseleg in ISOPLUS i4-PAC 在ISOPLUS I4 -PAC IGBT phaseleg 双极性晶体管
文件：	总2页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FII 30-06D

I_C25

V_CES

= 30 A

= 600 V

IGBT phaseleg

in ISOPLUS i4-PAC^TM

V_CE(sat)typ.= 1.9 V

Preliminary data

Features

IGBTs

• NPTIGBT

Symbol

V_CES

Conditions

Maximum Ratings

- low saturation voltage

- positive temperature coefficient for

easy paralleling

T_VJ= 25°C to 150°C

600

- fast switching

V_GES

• HiPerFRED^TMdiode

I_C25

I_C90

T_C= 25°C

T_C= 90°C

- optimized fast and soft reverse

recovery

- low operating forward voltage

- low leakage current

I_CM

V_CEK

V_GE= 15 V; R_G= 47 Ω; T_VJ= 125°C

V_CES

µs

RBSOA, Clamped inductive load; L = 100 µH

• ISOPLUS i4-PAC^TMpackage

- isolated back surface

- low coupling capacity between pins

and heatsink

t_SC

(SCSOA)

V_CE= V_CES; V_GE= 15 V; R_G= 47 Ω; T_VJ= 125°C

non-repetitive

P_tot

T_C= 25°C

100

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

- UL registered E 72873

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

V_CE(sat)

I_C= 20 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

1.9

2.2

2.4

Applications

• single phaseleg

- buck-boost chopper

• H bridge

- power supplies

- induction heating

- four quadrant DC drives

- controlled rectifier

• three phase bridge

- AC drives

V_GE(th)

I_CES

I_C= 0.5 mA; V_GE= V_CE

4.5

6.5

V_CE= V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.6 mA

0.6

I_GES

V_CE= 0 V; V_GE

20 V

200 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

300

0.92

0.68

Inductive load, T_VJ= 125°C

V_CE= 300 V; I_C= 20 A

V_GE= 15 V; R_G= 47 Ω

- controlled rectifier

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 300 V; V_GE= 15 V; I_C= 20 A

1.1

R_thJC

R_thJH

1.25 K/W

K/W

with heat transfer paste

2.5

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 2

IXYS Semiconductor GmbH

IXYS Corporation

Edisonstr. 15,

Phone: +49-6206-503-0, Fax: +49-6206-503627

D-68623 Lampertheim

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

FII 30-06D

Diodes

Symbol

Dimensions in mm (1 mm = 0.0394")

Conditions

Maximum Ratings

I_F25

I_F90

T_C= 25°C

T_C= 90°C

Symbol

V_F

Conditions

Characteristic Values

min. typ. max.

I_F= 20 A; T_VJ= 25°C

T_VJ= 125°C

2.3

1.6

2.7

I_RM

t_rr

I_F= 15 A; di /dt = -400 A/µs; T_VJ= 125°C

V_R= 300 V;^FV_GE= 0 V

R_thJC

R_thJH

(per diode)

with heat transfer paste

2.3 K/W

K/W

4.6

Component

Symbol

Conditions

Maximum Ratings

T_VJ

T_stg

-55...+150

-55...+125

°C

V_ISOL

F_C

I_ISOL≤ 1 mA; 50/60 Hz

2500

mounting force with clip

20...120

Symbol

C_P

Conditions

Characteristic Values

min.

typ. max.

coupling capacity between shorted

pins and mounting tab in the case

d_S,d_A

pin - pin

pin - backside metal

1.7

5.5

Weight

IXYS reserves the right to change limits, test conditions and dimensions.

2 - 2

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