M0310YH350 [IXYS]

Rectifier Diode,;


型号：	M0310YH350
厂家：	IXYS CORPORATION
描述：	Rectifier Diode,
文件：	总11页 (文件大小：385K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 8 Jun, 2004

Data Sheet Issue:- 1

WESTCODE

IXYS

Company

Soft Recovery Diode

Types M0310YH300 to M0310YH350

Old Type No.: SM30-35HXC103

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_RRM

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

3000-3500

V_RSM

3100-3600

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

I_F(RMS)

I_f(d.c.)

I_FSM

Maximum average forward current, T_sink=55°C, (note 2)

Maximum average forward current. T_sink=100°C, (note 2)

Maximum average forward. T_sink=100°C, (note 3)

Nominal RMS forward current, T_sink=25°C, (note 2)

D.C. forward current, T_sink=25°C, (note 4)

310

199

119

582

497

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, (note 5)

4590

I_FSM2

≤

5050

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t

I²t capacity for fusing t_p=10ms, V_RM=60%V_RRM, (note 5)

105×10³

128×10³

-40 to +150

A²s

°C

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

T_{j op}

Operating temperature range

Storage temperature range

T_stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 150°C T_jinitial.

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 1 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

2.80 I_FM=635A

V_FM

Maximum peak forward voltage

3.29

1.49

2.06

I_FM=930A

V_T0

r_T

Threshold voltage

Slope resistance

Ω

105 di/dt = 1000A/µs, 25°C

225 di/dt = 1000A/µs

V_FRM

Maximum forward recovery voltage

I_RRM

Q_rr

Q_ra

I_rm

Peak reverse current

Rated V_RRM

µC

Recovered charge

275

210

155

2.8

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time, 50% Chord

250

_FM=1000A, t_p=500µs, di/dt=100A/µs,

V_r=50V, 50% Chord.

t_rr

µs

0.1

0.2

8.5

Double side cooled

Single side cooled

R_thJK

Thermal resistance, junction to heatsink

K/W

Mounting force

Weight

5.5

W_t

140

Notes:-

1) Unless otherwise indicated T_j=150°C.

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 2 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V_RRM

V_RSM

(V)

V_Rdc

(V)

Voltage Grade

(V)

3000

3200

3400

3500

3100

3300

3500

3600

1700

1800

1850

1875

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T_jbelow 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of V_Fcharacteristic in Figure 1) are the

coefficients of the expression for the forward characteristic given below:

V_F= A + B ⋅ ln(I_F) + C ⋅ I_F+ D ⋅ I_F

where I_F= instantaneous forward current.

4.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig.(a) below.

(ii) Q_rris based on a 150 s integration time.

µs

150

Q_rr= i_rr.dt

∫

I.e.

(iii)

t₁

K Factor =

t₂

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 3 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery

loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then

be evaluated from:

T_SINK= T_{J (MAX )}− E ⋅

[k + f ⋅ R_thJK

]

Where = 0.2314 (°C/W)/s

= Area under reverse loss waveform per pulse in joules (W.s.)

= Rated frequency in Hz at the original sink temperature.

_thJK= d.c. thermal resistance (°C/W)

The total dissipation is now given by:

W_(tot)= W_{(original )}+ E ⋅ f

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring

oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current

signal.

damped snubber, connected across diode anode to cathode. The formula used for the calculation of

this snubber is shown below:

V_r

R²= 4⋅

C_S⋅ ^di

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R = Snubber resistance

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of

snubber capacitor or excessively small values of snubber resistor. Such excessive component values

may lead to device damage due to the large resultant values of snubber discharge current. If required,

please consult the factory for assistance.

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 4 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

−V_{T 0}+ V_{T 0}+ 4⋅ ff ²⋅ r ⋅W_AV

I_AV=

2⋅ ff ²⋅ r

Ω

Where _T0=1.49V, _T= 2.06m

ff _{= form factor (normally unity for fast diode applications)}

∆T

W_AV=

∆T = T_{j(MAX )}−T_K

7.2 Calculation of V_Fusing ABCD Coefficients

The forward characteristic I_FVs V_F, on page 6 is represented in two ways;

(i)

the well established V_T0and r_Ttangent used for rating purposes and

a set of constants A, B, C, and D forming the coefficients of the representative equation for V_F

in terms of I_Fgiven below:

(ii)

V_F= A + B ⋅ln(I_F) + C ⋅ I_F+ D ⋅ I_F

The constants, derived by curve fitting software, are given in this report for hot characteristics. The

resulting values for V_Fagree with the true device characteristic over a current range, which is limited to

that plotted.

25°C Coefficients

-0.32750255

0.4905669

125°C Coefficients

0.05657035

0.2226933

1.217811×10^-3

-0.02221939

8.020901×10^-4

0.03162494

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum

ratings shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included

as parallel to the first.

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 5 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Curves

Figure 1 – Forward characteristics of Limit device

Figure 2 – Maximum forward recovery voltage

10000

1000

M0310YH300-350

Issue 1

150°C

25°C

100

1000

150°C

25°C

100

1000

10000

Maximum instantaneous forward voltage - V_FM(V)

Rate of rise of forward current - di/dt (A/µs)

Figure 3 - Recovered charge, Q_rr

Figure 4 - Recovered charge, Q_ra(50% chord)

1000

M0310YH300-350

2000A

1000A

Issue 1

T_j= 150°C

500A

250A

2000A

1000A

500A

250A

100

1000

100

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 6 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Figure 5 - Maximum reverse current, I_rm

Figure 6 - Maximum recovery time, t_rr(50% chord)

1000

M0310YH300-350

Issue 1

T_j= 150°C

2000A

1000A

500A

250A

100

2000A

1000A

500A

250A

100

1000

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 – Reverse recovery energy per pulse

Figure 8 - Sine wave energy per pulse

10000

1.00E+03

M0310YH300-350

Issue 1

T_j= 150°C

V_R= 67% V_RRM

Snubber

0.25µF, 10

Ω

1.00E+02

3000A

2000A

1500A

1000A

500A

2000A

1000A

250A

1.00E+01

500A

250A

1000

1.00E+00

1.00E-01

1.00E-02

100

1000

10000

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Commutation rate - di/dt (A/µs)

Pulse width (s)

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 7 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Figure 9 - Sine wave frequency vs. pulse width

Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

M0310YH300-350

Issue 1

T_K= 55°C

T_K= 85°C

250A

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

500A

100% Duty Cycle

500A

1000A

1500A

2000A

1.00E+03

1500A

2000A

3000A

1.00E+02

3000A

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 11 - Square wave energy per pulse

Figure 12 - Square wave energy per pulse

1.00E+03

M0310YH300-350

Issue 1

di/dt =100A/µs

T_j= 150°C

Issue 1

di/dt = 500A/µs

T_j= 150°C

1.00E+02

1.00E+01

1.00E+00

1.00E-01

3000A

2000A

1500A

1000A

500A

250A

1.00E+01

3000A

2000A

1500A

1.00E+00

1000A

500A

1.00E-01

250A

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 8 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Figure 13 - Square wave frequency vs. pulse width

Figure 14 - Square wave frequency vs. pulse width

1.00E+05

M0310YH300-350

Issue 1

di/dt =100A/µs

T_K=55°C

di/dt =500A/µs

T_K= 55°C

250A

100% Duty Cycle

1.00E+04

250A

1.00E+04

500A

1000A

1.00E+03

1.00E+02

1.00E+01

1500A

2000A

1.00E+03

1000A

1500A

3000A

1.00E+02

2000A

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width

Figure 16 - Square wave frequency vs. pulse width

1.00E+05

M0310YH300-350

Issue 1

di/dt =500A/µs

di/dt =100A/µs

T_K= 85°C

250A

500A

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

100% Duty Cycle

250A

500A

1000A

1500A

1.00E+03

1000A

2000A

1500A

1.00E+02

3000A

2000A

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 9 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Figure 17 – Maximum surge and I²t ratings

100000

1.00E+06

I²t: V_RRM10V

M0310YH300-350

≤

Issue 1

I²t: V_R=60% V_RRM

T_j(initial) = 150°C

10000

1.00E+05

I_FSM: V_RRM10V

≤

I_FSM: V_R=60% V_RRM

1000

1.00E+04

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Figure 18 – Transient thermal impedance

M0310YH300-350

Issue 1

SSC 0.2°C/W

DSC 0.1°C/W

0.1

0.01

0.001

0.0001

0.001

0.01

0.1

100

Time (s)

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 10 of 11

June, 2004

WESTCODE ^AnIXYS Company

Soft Recovery Diode Types M0310YH300 to M0310YH350

Outline Drawing & Ordering Information

100A317

ORDERING INFORMATION

(Please quote 10 digit code as below)

M0310

Voltage code

Fixed

V_RRM÷100

30-35

Fixed code

Type Code

outline code

Typical order code: M0310YH320 – 3200V V_RRM, 26.6mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

WESTCODE

Fax: +49 6206 503-627

Fax: +44 (0)1249 659448

An IXYS Company

E-mail: marcom@ixys.de

E-mail: WSL.sales@westcode,com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

www.westcode.com

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

www.ixys.com

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Data Sheet. Types M0310YH300 to M0310YH350 Issue 1

Page 11 of 11

June, 2004

M0310YH350 [IXYS]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E