MCA500-22I1 [IXYS]
Silicon Controlled Rectifier,;
| 型号： | MCA500-22I1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总12页 (文件大小：499K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date: 19.09.2005
IXYS
Data Sheet Issue: 3
Thyristor/Diode Modules M## 500
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC
MCD
MDC
MCA
MCK
MCDA
MDCA
2000
2200
500-20io1
500-22io1
500-20io1
500-22io1
500-20io1
500-22io1
500-20io1
500-22io1
500-20io1
500-22io1
500-20io1
500-22io1
500-20io1
500-22io1
MAXIMUM
LIMITS
2000-2200
2000-2200
2000-2200
2100-2300
VOLTAGE RATINGS
UNITS
VDRM
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
V
V
V
V
VDSM
VRRM
VRSM
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
IT(AV)M
Maximum average on-state current, TC = 80°C 2)
Maximum average on-state current. TC = 85°C 2)
500
A
A
460
Maximum average on-state current. TC = 100°C 2)
323
A
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2)
1071
879
A
IT(d.c.)
ITSM
ITSM2
I2t
D.C. on-state current, TC = 55°C
A
3)
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
Peak non-repetitive surge tp = 10 ms, VRM ≤ 10V 3)
14.0
kA
kA
A2s
A2s
A/µs
A/µs
V
15.4
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM
0.98×106
1.19×106
150
3)
I2t
I2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3)
Critical rate of rise of on-state current (repetitive) 4)
(di/dt)cr
Critical rate of rise of on-state current (non-repetitive) 4)
Peak reverse gate voltage
300
VRGM
PG(AV)
PGM
5
Mean forward gate power
4
W
Peak forward gate power
Isolation Voltage 5)
30
W
VISOL
Tvj op
Tstg
3500
-40 to +125
-40 to +150
V
Operating temperature range
Storage temperature range
°C
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr ≤ 0.5µs, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 1 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Thyristor Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VTM
VTM
VT0
rT
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
-
-
-
1.65 ITM = 1700 A
1.57 ITM = 1500 A
0.88
V
V
-
-
V
Slope resistance
-
0.46
mΩ
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage 1000
-
-
VD = 80% VDRM, linear ramp, Gate o/c
IDRM
IRRM
VGT
IGT
IH
Peak off-state current
Peak reverse current
-
-
-
-
-
-
-
-
-
-
-
-
-
70
Rated VDRM
Rated VRRM
70
Gate trigger voltage
-
3.0
300
Tvj = 25°C, VD = 10 V, IT = 3 A
Gate trigger current
-
mA
mA
Holding current
-
1000 Tvj = 25°C
tgd
Gate controlled turn-on delay time
Turn-on time
0.6
1.2
3000
1800
140
26
1.5
IFG = 2 A, tr = 0.5 µs, VD = 67%VDRM
,
µs
I
TM = 2000 A, di/dt = 10 A/µs, Tvj = 25°C
tgt
2.5
Qrr
Qra
Irm
Recovered Charge
-
µC
µC
A
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
2400
I
TM = 1000 A, tp = 1 ms, di/dt = 10A/µs,
VR = 50 V
-
-
trr
µs
ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvDR/dt = 20 V/µs
ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvDR/dt = 200 V/µs
-
-
200
300
-
-
tq
Turn-off time
µs
-
-
0.062 Single Thyristor
0.031 Whole Module
0.02 Single Thyristor
0.01 Whole Module
5.75
K/W
K/W
K/W
K/W
Nm
Nm
kg
RthJC
Thermal resistance, junction to case
Thermal resistance, case to heatsink
-
-
-
-
-
RthCH
-
-
F1
F2
Wt
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
4.25
10.2
-
2)
-
13.8
1.5
-
Diode Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VFM
VT0
rT
Maximum peak forward voltage
Threshold voltage
-
-
-
-
-
-
-
-
-
-
1.09 ITM = 1700 A
V
V
0.72
Slope resistance
-
0.143
mΩ
mA
µC
µC
A
IRRM
Qrr
Qra
Irm
Peak reverse current
-
50
Rated VRRM
Recovered Charge
2200
1800
145
25
-
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
2250
I
TM = 1000 A, tp = 1ms, di/dt = 10 A/µs,
VR = 50 V
-
-
trr
µs
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 2 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
DRM VDSM VRRM
VRSM
V
VD VR
DC V
1250
1350
Voltage Grade
V
20
22
2000
2200
2100
2300
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 3 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
∆T
Rth
2
−VT 0 + VT 0 + 4⋅ ff 2 ⋅r ⋅WAV
WAV =
T
IAV =
and:
2⋅ ff 2 ⋅r
T
∆T = Tj max −TK
Where VT0 = 0.88 V, rT = 0.46 mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
60°
90°
120°
180°
270°
d.c.
0.062
0.07067 0.06791 0.06629 0.06525 0.06395 0.06277
0.06767 0.06536 0.06408 0.0633
Form Factors
0.062
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating VT/VF using ABCD Coefficients
The on-state/forward characteristics, IT vs. VT, on pages 6 & 9 are represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of
IT given below:
VT = A + B ⋅ln
(
IT + C ⋅ IT + D ⋅ IT
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
Thyristor coefficients
25°C
125°C
A
B
C
D
2.296566505
-0.3387419
0.617965877
0.01056009
2.13809×10-4
0.01430982
-6.25982×10-5
0.04767141
Diode coefficients
25°C
125°C
A
B
C
D
0.578986196
0.1048225
-0.214099731
0.2916851
1.61162×10-4
-7.480625×10-3
5.15459×10-4
-0.04232154
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 4 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
8.3 D.C. Thermal Impedance Calculation
−t
τ p
p=n
r = r ⋅ 1− e
∑
t
p
p=1
Where p = 1 to n
n
t
= number of terms in the series
= Duration of heating pulse in seconds.
= Thermal resistance at time t.
= Amplitude of pth term.
rt
rp
τp
= Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C.
Term
1
2
3
4
0.05428
2.69428
4.4894×10-3
2.3382×10-3
0.8759×10-3
1.435×10-3
rp
τp
0.126017
0.013878
9.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
150µs
Qrr = irr .dt
∫
0
(iii)
t1
t2
K Factor =
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 5 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Thyristor Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance
0.1
10000
M##500-20io1-22io1
Issue 3
Single Thyristor
M##500-20io1-22io1
Issue 3
Tj = 25°C
Tj = 125°C
0.01
1000
0.001
0.0001
100
0.00001
0.00001 0.0001 0.001
0
0.5
1
1.5
2
2.5
3
3.5
0.01
0.1
1
10
100
Instantaneous On-state voltage - VTM (V)
Time (s)
Figure 3 – Gate characteristics - Trigger limits
Figure 4 – Gate characteristics – Power curves
35
8
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
Tj=25°C
Tj=25°C
7
30
6
Max VG dc
Max VG dc
25
5
20
15
4
3
2
IGT, VGT
PG Max 30W dc
10
PG 4W dc
5
1
Min VG dc
0.8
IGD, VGD
Min VG dc
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 6 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Figure 5 – Total recovered charge, Qrr
Figure 6 – Recovered charge, Qra (50% chord)
10000
10000
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 7 – Peak reverse recovery current, Irm
Figure 8 – Maximum recovery time, trr (50% chord)
100
10000
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
1000
100
10
10
2000A
1500A
1000A
500A
1
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 7 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Figure 9 – On-state current vs. Power dissipation
– Sine wave
Figure 10 – On-state current vs. case temperature
– Sine wave
1800
140
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
180°
120°
1600
1400
1200
1000
800
600
400
200
0
90°
60°
120
30°
100
80
60
40
120°
30°
400
60°
90°
180°
20
0
0
200
400
600
800
1000
0
200
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation
– Square wave
Figure 12 – On-state current vs. case temperature
– Square wave
1800
140
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
1600
120
1400
100
80
1200
d.c.
1000
270°
180°
120°
90°
60°
30°
30°
60°
90°
120°
180°
270°
d.c.
800
600
400
200
0
60
40
20
0
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
1200
1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 8 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Figure 13 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
I2t: VRRM ≤10V
I2t: 60% VRRM
1.00E+06
ITSM: VRRM ≤10V
ITSM: 60% VRRM
Tj (initial) = 125°C
M##500-20io1-22io1
Issue 3
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Diode curves
Figure 14 – Instantaneous forward voltage VF
Figure 15 – Transient thermal impedance
0.1
10000
Single Diode
M##500-20io1-22io1
Issue 3
M##500-20io1-22io1
Issue 3
0.01
0.001
Tj = 125°C
Tj = 25°C
1000
0.0001
0.00001
100
0.000001
0
0.5
1
1.5
2
2.5
1E-05 0.0001 0.001 0.01
0.1
1
10
100
Instantaneous On-state voltage - VFM (V)
Time (s)
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 9 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Figure 16 – Total recovered charge, Qrr
Figure 17 – Recovered charge, Qra (50% chord)
10000
10000
M##500-20io1-22io1
M##500-20io1-22io1
Issue 3
Issue 3
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 18 – Peak reverse recovery current, Irm
Figure 19 – Maximum recovery time, trr (50% chord)
100
10000
M##500-20io1-22io1
Issue 3
Tj=125°C
M##500-20io1-22io1
Issue 3
Tj=125°C
2000A
1500A
1000A
500A
10
1000
2000A
1500A
1000A
500A
1
100
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 10 of 11
September, 2005
IXYS
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Outline Drawing & Ordering Information
3
6 7
1
1
1
1
5 4 2
5 4 2
2
MCC
MCD
MDC
MCA
3
3
6 7
3 7 6
5 4 2
3
6 7 1 4 5
2
5 4 2
2
MCK
MCDA
MDCA
3
1
1
3 7 6
ORDERING INFORMATION
(Please quote 11 digit code as below)
ꢀꢀ
M
##
500
io
1
Configuration code
CC, CD, DC, CA, CK,
CDA, DCA
Voltage code
VRRM/100
20-22
Fixed
Average Current
Rating
i = Critical dv/dt 1000 V/µs
o = Typical turn-off time
Fixed
Type Code
Version Code
Order code: MCD500-20io1– MCD configuration, 2000V VRRM
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
IXYS
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
www.ixys.com
IXYS Corporation
Westcode Semiconductors Inc
3270 Cherry Avenue
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
WESTCODE
E-mail: WSI.sales@westcode.com
An IXYS Company
www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
© IXYS Semiconductor GmbH.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 11 of 11
September, 2005
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