MCD220-16IO1 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCD220-16IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 220
MCD 220
ITRMS = 2x 400 A
ITAVM = 2x 250 A
VRRM = 800-1600 V
Thyristor Modules
Thyristor/Diode Modules
3
7
2
6
VRSM
VDSM
VRRM
VDRM
Type
5
4
1
V
V
Version 1
Version 1
900
800
1200
1400
1600
MCC 220-08io1
MCC 220-12io1
MCC 220-14io1
MCC 220-16io1
MCD 220-08io1
MCD 220-12io1
MCD 220-14io1
MCD 220-16io1
1300
1500
1700
3
3
6 7 1
5 4 2
Symbol
Test Conditions
Maximum Ratings
MCC
MCD
ITRMS, IFRMS
TVJ = TVJM
TC = 85°C; 180° sine
400
250
A
A
ITAVM FAVM
, I
1
5 4 2
ITSM, IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
8500
9000
A
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7000
7600
A
A
VR = 0
òi2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
360 000
336 000
A2s
A2s
A2s
A2s
Features
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
245 000
240 000
●
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
●
(di/dt)cr
TVJ = TVJM
repetitive, IT = 750 A
100
A/ms
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 1 A
●
●
●
●
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
non repetitive, IT = 250 A
VDR = 2/3 VDRM
800
A/ms
V/ms
diG/dt = 1 A/ms
(dv/dt)cr
PGM
TVJ = TVJM
;
1000
Applications
RGK = ¥; method 1 (linear voltage rise)
●
Motor control
Power converter
Heat and temperature control for
TVJ = TVJM
IT = ITAVM
tP = 30 ms
tP = 500 ms
120
60
W
W
W
●
●
PGAV
VRGM
20
industrial furnaces and chemical
processes
Lighting control
10
V
●
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
●
Contactless switches
Advantages
●
Space and weight savings
Simple mounting
Improved temperature and power
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
●
IISOL £ 1 mA
●
Md
Mounting torque (M5)
Terminal connection torque (M8)
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
cycling
Reduced protection circuits
●
Weight
Typical including screws
320
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
MCC 220
MCD 220
Symbol
Test Conditions
Characteristic Values
IRRM
IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
70 mA
40 mA
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.53
0.9
1.0 mW
V
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
V
V
150 mA
200 mA
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
0.25
10 mA
V
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200 mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
2
ms
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. 200
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM
ms
QS
IRM
TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/ms
760
275
mC
A
RthJC
RthJK
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
0.139 K/W
0.0695 K/W
0.179 K/W
0.0895 K/W
other values
see Fig. 8/9
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
Threaded spacer for higher Anode/
Cathode construction:
MCD
Type ZY 250, material brass
20
12
14
© 2000 IXYS All rights reserved
2 - 4
MCC 220
MCD 220
t
3 - 4
MCC 220
MCD 220
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.15
K/W
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
30°
DC
ZthJC
RthJC for various conduction angles d:
d
RthJC (K/W)
0.10
0.05
DC
0.139
0.141
0.142
0.142
0.143
180°C
120°C
60°C
30°C
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0037
0.0177
0.1175
0.0099
0.168
0.456
0
10-3
10-2
10-1
100
101
102
s
t
0.20
K/W
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
30°
DC
ZthJK
RthJK for various conduction angles d:
0.15
0.10
0.05
d
RthJK (K/W)
DC
0.179
0.181
0.182
0.183
0.183
180°C
120°C
60°C
30°C
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0037
0.0177
0.1175
0.04
0.0099
0.168
0.456
1.36
0
10-3
10-2
10-1
100
101
s
102
t
835
© 2000 IXYS All rights reserved
4 - 4
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