MDD172-08N1 [IXYS]
High Power Diode Modules; 大功率二极管模块型号: | MDD172-08N1 |
厂家: | IXYS CORPORATION |
描述: | High Power Diode Modules |
文件: | 总3页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MDD 172
IFRMS = 2x 300 A
IFAVM = 2x 190 A
VRRM = 800-1800 V
High Power
Diode Modules
3
2
3
1
2
1
VRSM
V V
VRRM
Type
900
800
MDD 172-08N1
MDD 172-12N1
MDD 172-14N1
MDD 172-16N1
MDD 172-18N1
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Features
●
International standard package
Direct copper bonded Al2O3 -ceramic
IFRMS
IFAVM
TVJ = TVJM
TC = 100°C; 180° sine
300
190
A
A
●
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
6600
7290
A
A
●
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5600
6200
A
A
●
òi2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
218 000
221 000
A2s
Applications
●
A2s
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
157 000
160 000
A2s
A2s
●
●
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
Advantages
●
Space and weight savings
Simple mounting
Improved temperature and power
●
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
●
IISOL £ 1 mA
cycling
Reduced protection circuits
Md
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
●
Weight
Typical including screws
120
g
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM
20 mA
VF
IF = 300 A; TVJ = 25°C
1.15
0.8
0.8 mW
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
QS
IRM
TVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms
550
235
mC
A
RthJC
per diode; DC current
per module
per diode; DC current
per module
0.21 K/W
0.105 K/W
0.31 K/W
0.155 K/W
other values
see Fig. 6/7
RthJK
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 3
MDD 172
t
© 2000 IXYS All rights reserved
2 - 3
MDD 172
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
0.210
0.223
0.233
0.260
0.295
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0087
0.0163
0.185
0.001
0.065
0.4
Fig. 7 Transient thermal impedance
junction toheatsink(per diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
180°
120°
60°
0.31
0.323
0.333
0.360
0.395
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0087
0.0163
0.185
0.1
0.001
0.065
0.4
1.29
© 2000 IXYS All rights reserved
3 - 3
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