MDD172-12N1 [IXYS]

High Power Diode Modules; 大功率二极管模块


型号：	MDD172-12N1
厂家：	IXYS CORPORATION
描述：	High Power Diode Modules 大功率二极管模块二极管局域网
文件：	总3页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MDD 172

I_FRMS= 2x 300 A

I_FAVM= 2x 190 A

V_RRM= 800-1800 V

High Power

Diode Modules

V_RSM

V V

V_RRM

Type

900

800

MDD 172-08N1

MDD 172-12N1

MDD 172-14N1

MDD 172-16N1

MDD 172-18N1

1300

1500

1700

1900

1200

1400

1600

1800

Symbol

Test Conditions

Maximum Ratings

Features

●

International standard package

Direct copper bonded Al₂O₃-ceramic

I_FRMS

I_FAVM

T_VJ= T_VJM

T_C= 100°C; 180° sine

300

190

●

base plate

Planar passivated chips

Isolation voltage 3600 V~

UL registered, E 72873

I_FSM

T_VJ= 45°C;

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

6600

7290

●

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

5600

6200

●

òi²dt

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

218 000

221 000

A²s

Applications

●

A²s

Supplies for DC power equipment

DC supply for PWM inverter

Field supply for DC motors

Battery DC power supplies

●

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

157 000

160 000

A²s

●

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+125

°C

Advantages

●

Space and weight savings

Simple mounting

Improved temperature and power

●

V_ISOL

50/60 Hz, RMS

t = 1 min

t = 1 s

3000

3600

●

I_ISOL£ 1 mA

cycling

Reduced protection circuits

M_d

Mounting torque (M6)

Terminal connection torque (M6)

2.25-2.75/20-25 Nm/lb.in.

4.5-5.5/40-48 Nm/lb.in.

●

Weight

Typical including screws

120

Dimensions in mm (1 mm = 0.0394")

Symbol

I_R

Test Conditions

Characteristic Values

T_VJ= T_VJM; V_R= V_RRM

20 mA

V_F

I_F= 300 A; T_VJ= 25°C

1.15

0.8

0.8 mW

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

Q_S

I_RM

T_VJ= 125°C; I_F= 300 A, -di/dt = 50 A/ms

550

235

R_thJC

per diode; DC current

per module

per diode; DC current

per module

0.21 K/W

0.105 K/W

0.31 K/W

0.155 K/W

other values

see Fig. 6/7

R_thJK

d_S

d_A

Creepage distance on surface

Strike distance through air

Maximum allowable acceleration

12.7 mm

9.6 mm

50 m/s²

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

1 - 3

MDD 172

Fig. 1 Surge overload current

I_FSM: Crest value, t: duration

Fig. 2 òi²dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

Fig. 3 Power dissipation versus

forward current and ambient

temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

R = resistive load

L = inductive load

2 - 3

MDD 172

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

Fig. 6 Transient thermal impedance

junction to case (per diode)

R_thJCfor various conduction angles d:

R_thJC(K/W)

180°

120°

60°

0.210

0.223

0.233

0.260

0.295

30°

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

0.0087

0.0163

0.185

0.001

0.065

0.4

Fig. 7 Transient thermal impedance

junction toheatsink(per diode)

R_thJKfor various conduction angles d:

R_thJK(K/W)

180°

120°

60°

0.31

0.323

0.333

0.360

0.395

30°

Constants for Z_thJKcalculation:

R_thi(K/W)

t_i(s)

0.0087

0.0163

0.185

0.1

0.001

0.065

0.4

1.29

3 - 3

相关型号：