MDD26-08N1B [IXYS]

Diode Modules; 二极管模块


型号：	MDD26-08N1B
厂家：	IXYS CORPORATION
描述：	Diode Modules 二极管模块二极管局域网
文件：	总3页 (文件大小：129K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MDD 26

I_FRMS= 2x 60 A

Diode Modules

I_FAVM= 2x 36 A

V_RRM= 800-1800 V

TO-240 AA

V_RSM

V_RRM

Type

900

1300

1500

1700

1900

800

1200

1400

1600

1800

MDD 26-08N1 B

MDD 26-12N1 B

MDD 26-14N1 B

MDD 26-16N1 B

MDD 26-18N1 B

Features

●

Symbol

Test Conditions

Maximum Ratings

International standard package

JEDEC TO-240 AA

Direct copper bonded Al₂O₃-ceramic

base plate

Planar passivated chips

Isolation voltage 3600 V~

UL registered, E 72873

I_FRMS

I_FAVM

T_VJ= T_VJM

T_C= 100°C; 180° sine

●

I_FSM

T_VJ= 45°C;

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

650

760

●

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

580

630

òi²dt

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

2100

2400

A²s

Applications

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1700

1900

A²s

●

Supplies for DC power equipment

DC supply for PWM inverter

Field supply for DC motors

●

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+125

°C

●

Battery DC power supplies

V_ISOL

50/60 Hz, RMS

t = 1 min

t = 1 s

3000

3600

Advantages

●

I_ISOL£ 1 mA

Space and weight savings

Simple mounting

Improved temperature and power

●

M_d

Mounting torque (M5)

Terminal connection torque (M5)

2.5-4/22-35 Nm/lb.in.

●

cycling

Reduced protection circuits

Weight

Typical including screws

●

Symbol

I_R

Test Conditions

Characteristic Values

Dimensions in mm (1 mm = 0.0394")

T_VJ= T_VJM; V_R= V_RRM

10 mA

V_F

I_F= 80 A; T_VJ= 25°C

1.38

0.8

6.1 mW

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

Q_S

I_RM

T_VJ= 125°C; I_F= 25 A, -di/dt = 0.6 A/ms

R_thJC

per diode; DC current

per module

per diode; DC current

per module

1.0 K/W

0.5 K/W

1.2 K/W

0.6 K/W

other values

see Fig. 6/7

R_thJK

d_S

d_A

Creepage distance on surface

Strike distance through air

Maximum allowable acceleration

12.7 mm

9.6 mm

50 m/s²

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

1 - 3

MDD 26

Fig. 1 Surge overload current

I_FSM: Crest value, t: duration

Fig. 2 òi²dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

Fig. 3 Power dissipation versus

forward current and ambient

temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

R = resistive load

L = inductive load

2 - 3

MDD 26

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

Fig. 6 Transient thermal impedance

junction to case (per diode)

R_thJCfor various conduction angles d:

R_thJC(K/W)

180°

120°

60°

1.00

1.02

1.04

1.07

1.10

30°

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

0.01

0.03

0.96

0.0012

0.095

0.455

Fig. 7 Transient thermal impedance

junction toheatsink(per diode)

R_thJKfor various conduction angles d:

R_thJK(K/W)

180°

120°

60°

1.20

1.22

1.24

1.27

1.30

30°

Constants for Z_thJKcalculation:

R_thi(K/W)

t_i(s)

0.01

0.03

0.96

0.2

0.0012

0.095

0.455

0.495

3 - 3

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