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MEA75-12DA [IXYS]

Fast Recovery Epitaxial Diode (FRED) Module; 快速恢复外延二极管（ FRED ）模块
MEA75-12DA
型号： MEA75-12DA
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Fast Recovery Epitaxial Diode (FRED) Module
快速恢复外延二极管（ FRED ）模块

整流二极管 局域网 快速恢复二极管
文件： 总2页 (文件大小：95K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MEA 75-12 DA VRRM = 1200 V  
MEK 75-12 DA IFAV = 75 A  
Fast Recovery  
Epitaxial Diode  
(FRED) Module  
MEE 75-12 DA trr  
= 250 ns  
Preliminary data  
3
TO-240 AA  
2
VRSM  
V
VRRM  
V
Type  
MEA75-12 DA  
MEK 75-12 DA  
MEE 75-12 DA  
1200  
1200  
1
2
3
1
2
3
1
2
3
Symbol  
Test Conditions  
Maximum Ratings  
Features  
IFRMS  
T
=
=
°C  
A
A
A
75  
75  
107  
75  
case  
T
●
International standard package  
with DCB ceramic base plate  
Planar passivated chips  
Short recovery time  
IFAV  
°C; rectangular, d = 0.5  
IFRM  
tPca<se10 µs; rep. rating, pulse width limited by TVJM  
TBD  
●
●
●
●
●
●
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
1200  
1300  
A
A
t = 8.3 ms (60 Hz), sine  
Low switching losses  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
1080  
1170  
7200  
7100  
5800  
5700  
A
Soft recovery behaviour  
Isolation voltage 3600 V~  
UL registered E 72873  
t = 8.3 ms (60 Hz), sine  
A
I2t  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
A2s  
A2s  
t = 8.3 ms (60 Hz), sine  
A2s  
Applications  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
●
A2s  
Antiparallel diode for high frequency  
t = 8.3 ms (60 Hz), sine  
switching devices  
TVJ  
-40...+150  
-40...+125  
110  
°C  
°C  
°C  
●
Free wheeling diode in converters  
Tstg  
and motor control circuits  
THmax  
●
Inductive heating and melting  
Ptot  
VISOL  
Tcase = 25°C  
280  
W
●
Uninterruptible power supplies (UPS)  
50/60 Hz, RMS t = 1 min  
3000  
3600  
V~  
V~  
●
Ultrasonic cleaners and welders  
IISOL ≤ 1 mA  
t = 1 s  
Advantages  
Md  
Mounting torque (M5)  
2.50-4/22-35 Nm/lb.in.  
2.50-4/22-35 Nm/lb.in.  
●
Terminal connection torque (M5)  
High reliability circuit operation  
●
Low voltage peaks for reduced  
dS  
dA  
a
Creep distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
protection circuits  
●
Low noise switching  
●
Low losses  
90  
Weight  
g
Symbol  
Test Conditions  
Characteristic Values (per diode)  
typ. max.  
Dimensions in mm (1 mm = 0.0394")  
IR  
TVJ = 25°C  
TVJ = 25°C  
VR = VRRM  
mA  
mA  
mA  
2
VR = 0.8 • VRRM  
0.5  
34  
TVJ =125°C VR = 0.8 • VRRM  
VF  
IF = 100A; TVJ = 125°C  
TVJ = 25°C  
1.85  
2.17  
2.58  
2.64  
V
V
V
V
IF = 300A; TVJ = 125°C  
TVJ = 25°C  
VT0  
rT  
For power-loss calculations only  
V
1.48  
3.65  
mΩ  
RthJH  
DC current  
DC current  
K/W  
K/W  
0.550  
0.450  
RthJC  
trr  
IF  
=
A
V
TVJ = 100°C  
TVJ 25°C  
TVJ = 100°C  
ns  
A
150  
600  
250  
300  
22  
IRM  
VR =  
=
-di/dt=  
A/µs  
A
200  
33  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
D6 - 5  
MEA 75-12 DA MEE 75-12 DA  
MEK 75-12 DA  
200  
A
10  
100  
T = 100°C  
VVRJ= 600V  
T = 100°C  
VVRJ= 600V  
A
µC  
175  
I = 150A  
IF= 100A  
IFF= 70A  
8
80  
Qr  
IRM  
150  
125  
100  
75  
IF  
I = 150A  
TVJ=125°C  
TVJ= 25°C  
IF= 100A  
6
4
2
0
60  
IFF= 70A  
40  
50  
20  
0
25  
0
V
A/µs  
-diF/dt  
0
1
2
VF  
3
10  
100  
1000  
0
200 400 600 800 1000  
A/µs  
-diF/dt  
Fig. 1 Forward current IF versus  
voltage drop VF per leg  
Fig. 2 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 3 Peak reverse current IRM  
versus -diF/dt  
1.4  
350  
100  
2.0  
T = 100°C  
VVRJ= 600V  
µs  
A
ns  
VFR  
1.2  
Kf  
80  
1.6  
1.2  
0.8  
0.4  
0.0  
VFR  
tfr  
300  
tfr  
trr  
1.0  
60  
40  
20  
0
I = 150A  
IF= 100A  
250  
IFF= 70A  
IRM  
0.8  
Qr  
200  
0.6  
0.4  
T = 100°C  
IFVJ = 150A  
150  
0
50  
100  
TVJ  
150  
0
200 400 600 800 1000  
0
200 400 600 800 1A0/0µ0s  
°C  
A/µs  
-diF/dt  
diF/dt  
Fig. 4 Dynamic parameters Qr, IRM  
versus junction temperature TVJ  
Fig. 5 Recovery time trr versus -diF/dt  
Fig. 6 Peak forward voltage VFR and tfr  
versus diF/dt  
0.6  
K/W  
0.5  
0.4  
ZthJH  
Constants for ZthJH calculation:  
0.3  
0.2  
0.1  
0.0  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.037  
0.138  
0.093  
0.282  
0.002  
0.134  
0.25  
0.274  
75-12 DA  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 7 Transient thermal impedance junction to heatsink  
© 2000 IXYS All rights reserved  
D6 - 6  

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