MEO450-12DA [IXYS]

Fast Recovery Epitaxial Diode (FRED) Module; 快速恢复外延二极管( FRED )模块
MEO450-12DA
型号: MEO450-12DA
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Fast Recovery Epitaxial Diode (FRED) Module
快速恢复外延二极管( FRED )模块

二极管
文件: 总2页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MEO 450-12 DA VRRM = 1200 V  
IFAVM = 453 A  
Fast Recovery  
Epitaxial Diode  
(FRED) Module  
trr  
= 450 ns  
Preliminary data  
3
3
1
1
VRSM  
V
VRRM  
V
Type  
1200  
1200  
MEO 450-12DA  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings  
640  
453  
2460  
A
A
A
Features  
TC = 75°C  
IFAVM  
IFRM  
TC = 75°C; rectangular, d = 0.5  
tP < 10 ms; rep. rating, pulse width limited by TVJM  
International standard package  
with DCB ceramic base plate  
Planar passivated chips  
Short recovery time  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
4800  
5280  
A
A
t = 8.3 ms (60 Hz), sine  
Low switching losses  
4320  
4750  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
A
A
Soft recovery behaviour  
Isolation voltage 3600 V~  
UL registered E 72873  
t = 8.3 ms (60 Hz), sine  
I2t  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
A2s  
A2s  
115200  
117100  
t = 8.3 ms (60 Hz), sine  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
A2s  
A2s  
93300  
94800  
Applications  
Antiparallel diode for high frequency  
t = 8.3 ms (60 Hz), sine  
-40...+150  
-40...+125  
110  
TVJ  
Tstg  
TSmax  
°C  
°C  
°C  
switching devices  
Free wheeling diode in converters  
and motor control circuits  
Inductive heating and melting  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
1750  
Ptot  
TC = 25°C  
W
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA  
3000  
3600  
V~  
V~  
t = 1 s  
Md  
Mounting torque (M6)  
Terminal connection torque (M6)  
2.25-2.75/20-25 Nm/lb.in.  
4.50-5.50/40-48 Nm/lb.in.  
Advantages  
High reliability circuit operation  
Low voltage peaks for reduced  
dS  
dA  
a
Creeping distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
protection circuits  
Low noise switching  
Low losses  
Weight  
150  
g
Symbol  
Test Conditions  
Characteristic Values (per diode)  
typ. max.  
Dimensions in mm (1 mm = 0.0394")  
IR  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
mA  
mA  
mA  
24  
6
120  
300  
1.51  
1.78  
1.76  
1.96  
VF  
IF =  
A; TVJ = 125°C  
TVJ = 25°C  
A; TVJ = 125°C  
TVJ = 25°C  
V
V
V
V
520  
IF =  
VT0  
rT  
For power-loss calculations only  
1.16  
1.15  
V
mW  
RthJH  
RthJC  
DC current  
DC current  
0.114  
0.071  
K/W  
K/W  
trr  
IRM  
IF  
VR=  
=
600 A  
600 V  
-di/dt = 800 A/ms  
TVJ = 100°C  
TVJ 25°C  
TVJ = 100°C  
450  
500  
110  
165  
ns  
A
A
=
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 2  
MEO 450-12 DA  
800  
A
700  
120  
200  
A
TVJ= 100°C  
VR = 600V  
µC  
TVJ= 100°C  
VR = 600V  
180  
100  
160  
max.  
IRM  
max.  
Qr  
600  
500  
400  
300  
200  
100  
0
IF  
140  
120  
100  
80  
IF=600A  
IF=600A  
IF=450A  
IF=225A  
80  
60  
40  
20  
0
IF=600A  
IF=600A  
IF=450A  
IF=225A  
typ.  
TVJ=125°C  
60  
typ.  
40  
TVJ=25°C  
20  
0
A/ s  
-diF/dt  
0.0  
0.5  
1.0  
1.5  
2.0 V 2.5  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
VF  
Fig. 1 Forward current IF versus VF  
Fig. 2 Reverse recovery charge Qr  
versus -diF / dt  
Fig. 3 Peak reverse current IRM  
versus -diF / dt  
1.4  
2000  
100  
2.5  
TVJ= 125°C  
IF = 520A  
V
TVJ= 100°C  
VR = 600V  
ns  
90  
µs  
1.2  
Kf  
1600  
80  
2.0  
VFR  
trr  
VFR  
max.  
tfr  
1.0  
70  
60  
50  
40  
30  
20  
10  
0
IF=600A  
IF=600A  
IF=450A  
IF=225A  
tfr  
IRM  
1200  
800  
400  
0
1.5  
1.0  
0.5  
0
0.8  
0.6  
Qr  
0.4  
0.2  
0.0  
typ.  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
400  
800  
-diF/dt  
1200 A/ s  
°C  
A/ s  
-diF/dt  
TVJ  
Fig. 4 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 5 Recovery time trr versus -diF / dt  
Fig. 6 Peak forward voltage VFR and tfr  
versus diF / dt  
0.14  
K/W  
0.12  
Constants for ZthJS calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.001  
0.004  
0.027  
0.082  
0.08  
0.10  
ZZthJH  
0.024  
0.112  
0.464  
0.08  
0.06  
0.04  
0.02  
0.00  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 7 Transient thermal impedance junction to case  
© 2000 IXYS All rights reserved  
2 - 2  

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