MIXA20WB1200TMH [IXYS]
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23;
| 型号： | MIXA20WB1200TMH |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23 局域网 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA20WB1200TMH
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
Converter - Brake - Inverter
Module
XPT IGBT
VRRM = 1600 V VCES = 1200 V VCES =1200 V
IDAVM25 = 100 A IC25 = 28 A IC25 = 28 A
IFSM = 270 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Part name (Marking on product)
MIXA20WB1200TMH
P P1
T1
T3
T5
D10
D8
D12
D7
D1
D5
D3
NTC1
G1
B
G3
G4
G5
G6
L1
L2
L3
W
U
V
T2
T7
T6
T4
D2
D6
D11
D4
D9
D13
NTC2
E 72873
GB
G2
Pin configuration see outlines.
NB
EU
EV
EW
N
Features:
Application:
Package:
• High level of integration - only one
power semiconductor module required
for the whole drive
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
• Rugged XPT design
(Xtreme light Punch Through) results in: • Inverter and power supplies
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
1 - 8
MIXA20WB1200TMH
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
28
20
A
A
total power dissipation
Ptot
TC = 25°C
100
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 16 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.1
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5
5.5
6.5
0.1
V
TVJ = 25°C
TVJ = 125°C
mA
mA
0.1
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 15 A
48
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 15 A
VGE = 15 V; RG = 56 W
TVJ = 125°C
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 56 W; VCEK = 1200 V
45
A
TVJ = 125°C
short circuit safe operating area
ISC
VCE = 900 V; VGE = 15 V;
TVJ = 125°C
60
A
(SCSOA)
RG = 56 W; tp = 10 µs; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
1.26 K/W
K/W
0.42
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = 25°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
33
22
A
A
forward voltage
VF
IF = 20 A; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
3
20
350
0.7
µC
A
ns
mJ
VR = 600 V
diF /dt = -400 A/µs
IF = 20 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
1.5 K/W
K/W
0.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
2 - 8
MIXA20WB1200TMH
Brake T7
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
28
20
A
A
total power dissipation
Ptot
TC = 25°C
100
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 16 A; VGE = 15 V
TVJ = 25°C
1.8
2.1
V
V
TVJ = 125°C
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5
5.5
6.5
0.1
V
TVJ = 25°C
TVJ = 125°C
0.01
0.1
mA
mA
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 15 A
48
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 15 A
TVJ = 125°C
VGE = 15 V; RG = 56 W
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 56 W; VCEK = 1200 V
45
A
TVJ = 125°C
short circuit safe operating area
ISC
VCE = 900 V; VGE = 15 V;
TVJ = 125°C
60
A
(SCSOA)
RG = 56 W; tp = 10 µs; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
1.26 K/W
K/W
0.42
Brake Chopper D7
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitive reverse voltage
TVJ = 150°C
1200
V
forward current
IF25
IF80
TC = 25°C
TC = 80°C
12
8
A
A
forward voltage
reverse current
VF
IF = 5 A; VGE = 0 V
VR = VRRM
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
IR
TVJ = 25°C
TVJ = 125°C
0.01
0.1
0.1
mA
mA
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
0.6
6
350
0.15
µC
A
ns
mJ
VR = 600 V
diF /dt = 200 A/µs
IF = 5 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
3.4 K/W
K/W
1.1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
3 - 8
MIXA20WB1200TMH
Input Rectifier Bridge D8 - D11
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitive reverse voltage
TVJ = 25°C
1600
V
average forward current
max. average DC output current
IFAV
IDAVM
sine 180°
TC = 80°C
TC = 80°C
24
69
A
A
rect.; d = 1/3
max. forward surge current
IFSM
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
TVJ = 25°C
TVJ = 125°C
270
240
A
A
A2s
A2s
I2t value for fusing
I2t
TVJ = 25°C
TVJ = 125°C
360
290
total power dissipation
forward voltage
Ptot
VF
TC = 25°C
69
W
IF = 30 A
VR = VRRM
TVJ = 25°C
TVJ = 125°C
1.27
1.24
1.6
V
V
reverse current
IR
TVJ = 25°C
TVJ = 125°C
0.01
mA
mA
0.3
0.6
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
1.8 K/W
K/W
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max. Unit
resistance
R25
B25/50
TC = 25°C
4.75
5.0
3375
5.25
kW
K
Module
Symbol
Ratings
typ. max. Unit
Definitions
Conditions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
125
150
125
°C
°C
°C
-40
isolation voltage
VISOL
CTI
FC
IISOL < 1 mA; 50/60 Hz
2500
-
V~
comparative tracking index
mounting force
40
80
N
creep distance on surface
strike distance through air
dS
dA
12.7
12
mm
mm
Weight
35
g
Equivalent Circuits for Simulation
I
R0
V0
Ratings
typ. max. Unit
Symbol
Definitions
Conditions
min.
rectifier diode
V0
R0
D8 - D13
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
0.86
12.3
V
mW
IGBT
V0
R0
T1 - T6
D1 - D6
T7
1.1
86.3
V
mW
free wheeling diode
IGBT
V0
R0
1.19
40.0
V
mW
V0
R0
1.1
86.3
V
mW
V0
R0
free wheeling diode
D7
1.15
171
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
4 - 8
MIXA20WB1200TMH
Circuit Diagram
P P1
T1
T3
T5
D5
D10
D8
D12
D7
D1
D3
NTC1
G1
B
G3
G4
G5
G6
L1
L2
L3
W
U
V
T2
T7
T6
T4
D2
D6
D11
D9
D13
D4
NTC2
GB
G2
NB
EU
EV
EW
N
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
14
Ø4
A
48,26
44,45
35,56
31,75
55,9
40,6
12
27,94
26,37
24,13
20,32
16,51
8,89
U
P1
G1
NB
GB
B
P
2,2
1,2
EW
EV
EU
G6
G4
G2
NTC1
0,635
A ( 2 : 1 )
G3
G5
V
NTC2
L2
L3
L1
Pin positions with tolerance
Ø 0.4
N
W
Product Marking
Part number
M = Module
I = IGBT
X = XPT
A = standard
20 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
MH = MiniPack2
Ordering
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA 20 WB 1200 TMH MIXA20WB1200TMH
Box
20
508616
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
5 - 8
MIXA20WB1200TMH
IGBT T1 - T6
30
30
25
20
15
10
5
13 V
VGE = 15 V
11 V
VGE = 15 V
17 V
19 V
25
20
15
10
5
T
VJ = 125°C
TVJ = 25°C
IC
IC
TVJ = 125°C
[A]
[A]
9 V
0
0
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
30
25
20
15
10
5
IC
= 15 A
VCE = 600 V
IC
VGE
[A]
[V]
TVJ = 125°C
TVJ = 25°C
0
0
0
10
20
30
40
50
60
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
4
3
2
2.8
2.4
2.0
1.6
1.2
RG
VCE = 600 V
VGE 15 V
TVJ = 125°C
=
56 Ω
IC =
VCE = 600 V
VGE 15 V
15 A
Eon
Eoff
=
=
TVJ = 125°C
E
E
[mJ]
[mJ]
Eoff
Eon
1
0
0
5
10 15 20 25 30 35
40
60
80 100 120 140 160
IC [A]
RG [Ω]
Fig. 5 Typ. switching energy vs. collector current
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
6 - 8
MIXA20WB1200TMH
Diode D1 - D6
40
5
4
3
2
1
TVJ = 125°C
VR = 600 V
30
40 A
20 A
IF
Qrr
20
[A]
[µC]
TVJ = 125°C
10
TVJ
=
25°C
10 A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200
300
400
500
600
700
VF [V]
diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
35
30
25
20
15
10
5
700
600
500
400
300
200
100
0
40 A
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
20 A
10 A
IRR
trr
40 A
[A]
[ns]
20 A
10 A
0
200
300
400
500
600
700
200
300
400
500
600
700
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
Fig. 10 Typ. recovery time trr versus di/dt
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
TVJ = 125°C
VR = 600 V
Diode
IGBT
40 A
20 A
Erec
ZthJC
IGBT
FRD
[mJ]
[K/W]
Ri
Ri
ti
ti
0.1
1 0.252 0.0015 0.461 0.0015
10 A
2 0.209 0.03
3 0.541 0.03
4 0.258 0.08
0.291 0.03
0.423 0.03
0.326 0.08
0.01
0.001
200
300
400
diF /dt [A/µs]
Fig. 11 Typ. recovery energy Erec versus di/dt
500
600
700
0.01
0.1
tp [s]
1
10
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
7 - 8
MIXA20WB1200TMH
NTC
100000
10000
1000
100
R
[Ω]
10
0
25
50
75
100
125
150
TC [°C]
Fig. 13 Typ. thermistor resistance vs. temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20101103b
8 - 8
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