MIXA30WB1200TED [IXYS]
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24;
| 型号： | MIXA30WB1200TED |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24 局域网 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA30WB1200TED
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
Converter - Brake - Inverter
Module
XPT IGBT
VRRM = 1600 V VCES = 1200 V VCES =1200 V
IDAVM = 105 A IC25 = 17 A IC25 = 43 A
IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Part name (Marking on product)
MIXA30WB1200TED
21 22
D7
D11 D13
D15
D5
D1
18
17
D3
D4
20
19
T1
T5
NTC
8
T3
T4
16
15
7
6
4
1
2
3
5
D6
D2
D12 D14
D16
13
12
14
11
10
T7
T2
T6
9
E 72873
Pin configuration see outlines.
23 24
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
Application:
Package:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
• Switched-mode and
- low EMI
resonant-mode power supplies
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
1 - 8
MIXA30WB1200TED
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
43
30
A
A
total power dissipation
Ptot
TC = 25°C
150
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 25 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.1
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5.4
6.0
6.5
1.5
V
TVJ = 25°C
TVJ = 125°C
0.02
0.2
mA
mA
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 25 A
76
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
2.5
3.0
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 15 A
VGE = 15 V; RG = 39 W
TVJ = 125°C
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 39 W;
TVJ = 125°C
VCEK = 1200 V
75
10
A
short circuit safe operating area
short circuit duration
short circuit current
SCSOA
tSC
ISC
VCE = 900 V; VGE = 15 V;
RG = 39 W; non-repetitive
TVJ = 125°C
µs
A
100
thermal resistance junction to case
RthJC
(per IGBT)
0.84 K/W
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = 25°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
44
30
A
A
forward voltage
VF
IF = 30 A; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
3.5
30
350
0.9
µC
A
ns
mJ
VR = 600 V
diF /dt = -600 A/µs
IF = 30 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
RthJC
(per diode)
1.2 K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
2 - 8
MIXA30WB1200TED
Brake T7
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
17
12
A
A
total power dissipation
Ptot
TC = 25°C
60
W
collector emitter saturation voltage
VCE(sat)
IC = 9 A; VGE = 15 V
TVJ = 25°C
1.8
2.1
2.1
V
V
TVJ = 125°C
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.3 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5.4
6.0
6.5
0.1
V
TVJ = 25°C
TVJ = 125°C
mA
mA
0.1
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 10 A
28
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 10 A
TVJ = 125°C
VGE = 15 V; RG = 100 W
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 100 W;
TVJ = 125°C
VCEK = 1200 V
30
10
A
short circuit safe operating area
short circuit duration
short circuit current
SCSOA
tSC
ISC
VCE = 900 V; VGE = 15 V;
RG = 100 W; non-repetitive
TVJ = 125°C
µs
A
40
thermal resistance junction to case
RthJC
(per IGBT)
2.0 K/W
Brake Chopper D7
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitive reverse voltage
TVJ = 25°C
1200
V
forward current
IF25
IF80
TC = 25°C
TC = 80°C
12
8
A
A
forward voltage
reverse current
VF
IF = 5 A; VGE = 0 V
VR = VRRM
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
IR
TVJ = 25°C
TVJ = 125°C
0.5
mA
mA
0.5
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
0.6
6
350
0.2
µC
A
ns
mJ
VR = 600 V
diF /dt = 200 A/µs
IF = 5 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
RthJC
(per diode)
3.4 K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
3 - 8
MIXA30WB1200TED
Input Rectifier Bridge D11 - D16
Ratings
Symbol
VRRM
Definitions
max. repetitive reverse voltage
Conditions
min.
typ. max. Unit
TVJ = 25°C
1600
V
average forward current
max. average DC output current
IFAV
IDAVM
sine 180°
TC = 80°C
TC = 80°C
37
105
A
A
rect.; d = 1/3
max. forward surge current
IFSM
t = 10 ms; sine 50 Hz
TVJ = 25°C
TVJ = 125°C
320
280
A
A
I2t value for fusing
I2t
t = 10 ms; sine 50 Hz
TVJ = 25°C
510
390
A2s
TVJ = 125°C
A2s
total power dissipation
forward voltage
Ptot
VF
TC = 25°C
TVJ = 25°C
110
1.7
W
IF = 50 A
1.34
1.34
V
V
TVJ = 125°C
reverse current
IR
VR = VRRM
(per diode)
TVJ = 25°C
TVJ = 125°C
0.02
mA
mA
0.2
thermal resistance junction to case
RthJC
1.1 K/W
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max. Unit
resistance
R25
B25/50
TC = 25°C
4.75
5.0
3375
5.25
kW
K
Module
Symbol
Ratings
typ. max. Unit
Definitions
Conditions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
125
150
125
°C
°C
°C
-40
isolation voltage
VISOL
CTI
Md
IISOL < 1 mA; 50/60 Hz
2500
V~
comparative tracking index
mounting torque (M5)
-
3
6
Nm
creep distance on surface
strike distance through air
dS
dA
6
6
mm
mm
resistance pin to chip
Rpin-chip
RthCH
5
0.02
180
mW
K/W
g
thermal resistance case to heatsink
with heatsink compound
Weight
Equivalent Circuits for Simulation
I
R0
V0
Ratings
typ. max. Unit
Symbol
Definitions
Conditions
min.
rectifier diode
V0
R0
D8 - D13
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
0.88
9
V
mW
V
mW
V
mW
V
mW
IGBT
V0
R0
T1 - T6
D1 - D6
T7
1.1
55
free wheeling diode
IGBT
V0
R0
1.2
27
V0
R0
1.1
153
free wheeling diode
V0
R0
D7
1.15
170
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
4 - 8
MIXA30WB1200TED
Circuit Diagram
21 22
D15
D7
D1
D3
D5
D11 D13
20
19
16
15
18
17
T1
T3
T5
NTC
8
7
1
2
3
6
5
4
D6
D2
D12 D14
D16
D4
12
13
14
11
10
T7
T2
T4
T6
9
23 24
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
2D Data Matrix:
FOSS-ID 6 digits
Batch # 6 digits
Part number
M = Module
I = IGBT
X = XPT
A = Standard
30 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
XXXXXXXXXX yywwx
UL Part name Date Code Location
Logo
ED = E2-Pack
Ordering
Standard
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
MIXA30WB1200TED Box 509 119
MIXA30WB1200 TED
6
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
5 - 8
MIXA30WB1200TED
Inverter T1 - T6
50
50
40
30
20
10
0
VGE = 15 V
13 V
VGE = 15 V
17 V
19 V
11 V
40
30
TVJ = 125°C
TVJ = 25°C
IC
IC
T
VJ = 125°C
20
10
0
[A]
[A]
9 V
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
50
40
30
20
10
0
IC
= 25 A
VCE = 600 V
IC
VGE
[A]
[V]
TVJ = 125°C
TVJ = 25°C
0
0
20
40
60
80
100
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eon
6
5
4
3
RG
VCE = 600 V
VGE 15 V
=
39 W
=
Eoff
Eon
TVJ = 125°C
Eoff
E
E
IC =
CE = 600 V
VGE 15 V
TVJ = 125°C
25 A
V
[mJ]
[mJ]
=
2
1
0
0
10
20
30
IC [A]
40
50
20 40 60 80 100 120 140 160
RG [ ]
Fig. 5 Typ. switching energy vs. collector current
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
6 - 8
MIXA30WB1200TED
Inverter D1 - D6
60
7
6
5
4
3
2
1
TVJ = 125°C
VR = 600 V
50
40
60 A
IF
Qrr
30
20
10
0
30 A
15 A
[A]
[µC]
TVJ = 125°C
TVJ
=
25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
300 400 500 600 700 800 900 1000 1100
VF [V]
diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
70
60
50
40
30
20
10
0
700
600
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
60 A
500
400
300
200
100
0
30 A
15 A
IRR
trr
[A]
[ns]
60 A
30 A
15 A
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
Fig. 10 Typ. recovery time trr versus di/dt
10
2.0
TVJ = 125°C
VR = 600 V
1.6
1.2
0.8
0.4
0.0
Diode
60 A
30 A
1
IGBT
Erec
ZthJC
IGBT
FRD
[mJ]
[K/W]
15 A
Ri
ti
Ri
ti
0.1
1
2
3
4
0.18 0.0025 0.3413 0.0025
0.14 0.03
0.36 0.03
0.16 0.08
0.2171 0.03
0.3475 0.03
0.2941 0.08
0.01
0.001
0.01
0.1
1
10
300 400 500 600 700 800 900 1000 1100
tp [s]
diF /dt [A/µs]
Fig.11 Typ. recovery energy Erec versus di/dt
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
7 - 8
MIXA30WB1200TED
Brake T7 & D7
20
10
8
VGE = 15 V
16
12
8
6
IC
IF
TVJ = 25°C
[A]
[A]
4
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
4
2
0
0
0.0
0
1
2
3
0.5
1.0
1.5
2.0
2.5
3.0
VCE [V]
Fig. 13 Typ. output characteristics
VF [V]
Fig. 14 Typ. forward characteristics
10
100000
10000
1000
100
diode
IGBT
ZthJC
R
1
[Ω]
[K/W]
Inverter-IGBT Inverter-FRD
Ri ti Ri ti
1 0.446 0.002 1.005 0.002
2 0.415 0.03 0.856 0.03
3 0.672 0.03 1.494 0.03
4 0.467 0.08 0.045 0.08
0.1
0.001
10
0.01
0.1
1
10
0
25
50
75
100
125
150
tP [s]
TC [°C]
Fig. 15 Typ. transient thermal impedance
Fig.16 Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
8 - 8
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