MPS-093011-86 [IXYS]
Wide Band Medium Power Amplifier, 800MHz Min, 1000MHz Max, 1 Func, GAAS, HERMETIC SEALED PACKAGE-10;
| 型号： | MPS-093011-86 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 800MHz Min, 1000MHz Max, 1 Func, GAAS, HERMETIC SEALED PACKAGE-10 射频 微波 |
| 文件： | 总2页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS-093011-85/86
800 to 1000 MHz Linear Amplifier
www.mwtinc.com
Email: info@mwtinc.com
Features
+45 dBm Typical IP3
+30 dBm Typical P1dB
Single Positive Bias
Surface Mount Package or
Half Flange Package
16 dB Typical Gain
The MPS093011 is a modular amplifier designed to meet the ultralinear
transmitter output requirements for many of the commercially available
wireless systems. The amplifier is a class A, single stage amplifier based on a
GaAs MESFET transistor. The amplifier exhibits an extremely high IP3
(+45dBm) relative to the DC power consumed (3 W). The device is self
contained with all matching and bias circuitry included.
Specifications
Electrical at 25 C, Vdd= 7.5 V, Zo= 50
Gain vs. Frequency
Symbol
Parameter
Min. Typical
Max Unit
19
17
15
Freq
SSG
P1dB
IP3
VSWR
GOF
GOT
dd
MHz
1000
Frequency Range
800
14
dB
dBm
dBm
Small Signal Gain
P out at 1 dB Compression
Third-order Intercept
Input VSWR
Gain Variation over Freq.
Gain Variation over Temp.
DC Current
16
+30.0
+45.0
+43.0
1.5:1/2.2:1
dB
dB/ C
mA
420
+/- 0.25 +/- 0.50
-.01
350
13
700 780 860 940 1020 1100
Frequency (MHz)
Output Power at P1dB
30
29
28
Absolute Maximum Ratings
Maximum Bias Voltage
8.0 V
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
950 mW
1400mW
+85 C
-65 C to +150 C
1100
940 1020
780 860
Frequency (MHz)
700
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
MPS-093011-85/86
800 to 1000 MHz Linear Amplifier
www.mwtinc.com
Email: info@mwtinc.com
Return Loss vs. Frequency
Return Loss vs. Frequency
0
0
-5
-5
OUTPUT
INPUT
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
700 780
860
940
1020 1100
700 780
840
940
1020 1100
Frequency (MHz)
Frequency (MHz)
Outline Diagrams
.65+/-.03
.250 SQ.
.355
.270 SQ
.125
LEAD 10
.015 TYP.
LEAD 1
Pin
1
Connection
N/C
2
3
4
N/C
RF Input
NC
.310
.375
.060 TYP.
INPUT
.470
5
6
N/C
N/C
OUTPUT
.050 TYP.
LEAD 6
7
8
9
N/C
RF Output, Vdd
N/C
LEAD 5
.175
10
Case
N/C
Ground
.130 DIA
THROUGH
GND.
.080 MAX.
.004+/-.001 TYP
.195 MAX
.010
GND.
.085
.060
Package 86 (HERMETIC)
Package 85
Application Circuit
C2
Vdd
CR1
L1
C1
Chip Capacitor
Capacitor
Printer or Wound Coil
Zener Diode
C1
C2
L1
100 pF
.22 uF
160 nH
RF
OUT
RF
IN
093011
CR1 8.0 V
50 Microstrip Line
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
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