MUBW30-12E6K [IXYS]
Converter - Brake - Inverter Module (CBI 1) SPT IGBT; 转换器 - 制动 - 逆变器模块（ CBI 1 ） SPT IGBT
| 型号： | MUBW30-12E6K |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Converter - Brake - Inverter Module (CBI 1) SPT IGBT |
| 文件： | 总9页 (文件大小：662K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUBW30-12E6K
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
Converter - Brake - Inverter
Module (CBI ꢀ)
SPT IGBT
VRRM =ꢀ600 V VCES = ꢀ200 V VCES = ꢀ200 V
IDAVM25 = ꢀ30 A IC25
=
=
ꢀ9 A IC25
=
=
29 A
IFSM = 300 A VCE(sat)
2.9 V VCE(sat)
2.9 V
Part name (Marking on product)
MUBW30-ꢀ2E6K
E72873
Pin configuration see outlines.
Features:
Application:
Package:
• High level of integration - oy one
power semiconductor module quired
for the whole drive
• Inverter with SPT IGBTs
- low saturation voltage
AC motor drives with
• UL registered
• Industry standard Eꢀ-pack
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
ꢀ - 9
MUBW30-12E6K
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C to ꢀ50°C
ꢀ200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
30
2ꢀ
A
A
total power dissipation
Ptot
TC = 25°C
ꢀ30
3.6
W
collector emitter saturation voltage
VCE(sat)
IC = 30 A; VGE = ꢀ5 V
TVJ = 25°C
TVJ = ꢀ25°C
3.ꢀ
3.8
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
4.5
6.5
ꢀ
V
TVJ = 25°C
TVJ = ꢀ25°C
mA
mA
0.6
gate emitter leakage current
input capacitance
IGES
VCE = 0 V; VGE = 20 V
200
nA
pF
nC
Cies
VCE = 25 V; VGE = 0 V; f = ꢀ MHz
VCE = 600 V; VGE = ꢀ5 V; IC = 20 A
ꢀꢀ80
ꢀ00
total gate charge
QG(on)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
2ꢀ0
ꢀꢀ0
320
ꢀ80
4.ꢀ
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 20 A
VGE = ꢀ5 V; RG = 68
TVJ = ꢀ25°C
ꢀ.5
reverse bias safe operating area
short circuit safe operating area
ICM
RBSOA; VGE = ꢀ5 V; RG = 68 W
45
A
L = ꢀ00 µH; clamped induct. load TVJ = ꢀ25°C
VCEmax = VC- LSdi/dt
tSC
VCE = 900 V; VGE = ꢀ5 V;
TVJ = ꢀ25°C
ꢀ0
µs
(SCSOA)
RG = W; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
per IGBT)
0.95 K/W
K/W
0.35
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve revervoltage
forward current
TVJ = ꢀ50°C
ꢀ200
V
IF25
IF80
TC = 25°C
TC = 80°C
49
32
A
A
forward voltage
VF
IF = 30 A; VGE = 0 V
TVJ = 25°C
TVJ = ꢀ25°C
2.9
V
V
2.0
max. reverse recovery current
reverse recovery time
reverse recovery energy
IRM
trr
Erec(off)
VR = 600 V
diF /dt = -500 A/µs
IF = 30 A; VGE = 0 V
27
ꢀ50
tbd
A
ns
µJ
TVJ = ꢀ25°C
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
0.9 K/W
K/W
0.3
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
2 - 9
MUBW30-12E6K
Brake Chopper T7
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C to ꢀ50°C
ꢀ200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
ꢀ9
ꢀ3
A
A
total power dissipation
Ptot
TC = 25°C
90
W
collector emitter saturation voltage
VCE(sat)
IC = ꢀ5 A; VGE = ꢀ5 V
TVJ = 25°C
2.9
3.5
3.4
V
V
TVJ = ꢀ25°C
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.4 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
4.5
6.5
0.5
V
TVJ = 25°C
TVJ = ꢀ25°C
mA
mA
0.8
gate emitter leakage current
input capacitance
IGES
VCE = 0 V; VGE = 20 V
ꢀ00
nA
pF
nC
Cies
VCE = 25 V; VGE = 0 V; f = ꢀ MHz
VCE = 600 V; VGE = ꢀ5 V; IC = ꢀ0 A
600
45
total gate charge
QG(on)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
45
40
290
60
ꢀ.2
ꢀ.ꢀ
ns
ns
ns
ns
mJ
mJ
inductive load
TVJ = ꢀ25°C
V
CE = 600 V; IC = ꢀ0 A
VGE = ꢀ5 V; RG = 82
reverse bias safe operating area
short circuit safe operating area
ICM
RBSOA; VGE = ꢀ5 V; RG = 82 W
20
A
L = ꢀ00 µH; clamped induct. load TVJ = ꢀ25°C
V
CEmax = VC- LSdi/dt
tSC
VCE = 720 V; VGE = ꢀ5 V;
TVJ = ꢀ25°C
ꢀ0
µs
(SCSOA)
RG = W; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
per IGBT)
ꢀ.35 K/W
K/W
0.45
Brake Chopper D7
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitive revervoltage
TVJ = ꢀ50°C
ꢀ200
V
forward current
IF25
IF80
TC = 25°C
TC = 80°C
ꢀ5
ꢀ0
A
A
forward voltage
reverse current
VF
IF = ꢀ5 A; VGE = 0 V
VR = VRRM
TVJ = 25°C
TVJ = ꢀ25°C
3.5
V
V
2.0
0.2
IR
TVJ = 25°C
TVJ = ꢀ25°C
0.06
mA
mA
max. reverse recovery current
reverse recovery time
IRM
trr
VR = 600 V; IF = ꢀ0 A
diF /dt = -400 A/µs
ꢀ3
ꢀꢀ0
A
ns
TVJ = ꢀ25°C
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
2.5 K/W
K/W
0.85
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
3 - 9
MUBW30-12E6K
Input Rectifier Bridge D8 - D13
Definitions
Conditions
Symbol
VRRM
Maximum Ratings
max. repetitive reverse voltage
ꢀ600
V
average forward current
max. average DC output current
max. surge forward current
IFAV
IDAVM
IFSM
sine ꢀ80°
TC = 80°C
TC = 80°C
TC = 25°C
3ꢀ
89
320
A
A
A
rectangular; d = ꢀ/3; bridge
t = ꢀ0 ms; sine 50 Hz
total power dissipation
80
Ptot
TC = 25°C
W
Symbol
Conditions
Characteristic Values
min. typ. max.
forward voltage
reverse current
VF
IR
IF = 30 A
VR = VRRM
TVJ = 25°C
ꢀ.0
ꢀ.ꢀ
ꢀ.35
V
V
T
VJ = ꢀ25°C
TVJ = 25°C
TVJ = ꢀ25°C
0.02
mA
mA
0.4
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
TVJ = 25°C
ꢀ.4 K/W
K/W
0.45
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
Conditio
min.
typ. max. Unit
resistance
R25
B25/85
TC = 25°C
4.45
4.7
35ꢀ0
5.0
kW
K
Module
Symbol
Ratings
typ. max. Unit
Definitions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
ꢀ25
ꢀ50
ꢀ25
°C
°C
°C
-40
isolation voltage
mounting torque
VISOL
Md
IISOL < ꢀ mA; 50/60 Hz
(4)
2500
2.2
V~
2.0
Nm
creep distance on surface
strike distance through air
dS
dA
ꢀ2.7
ꢀ2.7
mm
mm
Weight
40
g
Equivalent Circuits for Silation
I
R0
V0
Ratings
typ. max. Unit
Symbol
Definitions
Conditions
min.
rectifier diode
V0
R0
D8 - Dꢀ3
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
0.90
9
V
mW
IGBT
V0
R0
Tꢀ - T6
Dꢀ - D6
T7
ꢀ.ꢀ0
90
V
mW
free wheeling diode
IGBT
V0
R0
ꢀ.5
ꢀ4
V
mW
V0
R0
ꢀ.5
ꢀ20
V
mW
V0
R0
free wheeling diode
D7
ꢀ.46
63
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
4 - 9
MUBW30-12E6K
Outline Drawing
Dimensions in mm (ꢀ mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
MUBW30-ꢀ2E6K Box ꢀ0 499 323
MUBW 30-ꢀ2E6K
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
5 - 9
MUBW30-12E6K
Input Rectifier Bridge D8 - D13
80
200
A
103
A2s
TVJ = 125°C
A
TVJ
= 25°C
TVJ= 45°C
60
40
20
0
150
IFSM
I2t
IF
TVJ= 45°C
100
50
0
TVJ= 150°C
TVJ= 150°C
50Hz, 80% VRRM
0.01
102
V
0.0
0.6
1.2
1.8
2.4
0.001
0.1
1
1
2
3
4
5 6 ms 10
t
s
VF
t
Fig. ꢀ Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
160
W
100
A
RthA
:
0.2 K/W
0.5 W
08 K/
1/W
3 K/W
80
ID(AV)
120
Ptot
5 K/W
8 K/W
60
40
20
0
80
40
0
A
0
20
40
60
80
ID(AV)
0
20 40 60 80 100 120 140 C
Tamb
0
20 40 60 80 100 120 140 C
TC
Fig. 4 Power dissipation versus dct output current and ambient
temperature, sin ꢀ8°Fig.
Fig. 5 Max. forward current vs.
case temperature
1.6
K/W
1.2
ZthJC
0.8
0.4
0.0
MUBW30-12E6K
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
6 - 9
MUBW30-12E6K
Output Inverter T1 - T6 / D1 - D6
80
A
60
VGE = 17 V
VGE = 17 V
15 V
A
50
IC
TVJ = 125°C
IC
60
40
20
0
15 V
13 V
40
30
20
10
0
TVJ = 25°C
13 V
11 V
9 V
11 V
9 V
V
5 6
V
0
1
2
3
4
5
6
0
1
2
3
4
VCE
VCE
Fig. 7 Typ. output characteristics
Fig. 8 Typ. output characteristics
50
A
VCE = 20 V
A
80
TVJ = 25°C
I
IC
60
40
20
0
30
20
10
0
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
V
0
1
2
3
4
0
5
10
15
V
VF
VGE
Fig. 9 Typ. transfer charactistic
Fig. ꢀ0 Typ. forward characteristics of
free wheeling diode
50
A
250
ns
15
V
VCE = 600 V
IC = 20 A
40
200
12
IRM
VGE
trr
30
20
10
0
150
100
50
9
6
3
0
t
rr
TVJ = 125°C
VR = 600 V
IF = 15 A
I
RM
MUBW 30-12E6K
0
0
200
400
600
-di/dt
Fig. ꢀ2 Typ. turn off char. of free wheeling diode
A/Ps 1000
0
20
40
60
80
100
nC
QG
Fig. ꢀꢀ Typ. turn on gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
7 - 9
MUBW30-12E6K
Output Inverter T1 - T6 / D1 - D6
20
250
ns
4.0
400
td(on)
td(off)
mJ
ns
mJ
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
16
tr
300
250
200
150
100
50
Eoff
Eon
VCE = 600 V
VGE 15 V
t
t
VCE = 600 V
12
=
150
100
50
VGE
= 15 V
RG = 68 :
TVJ = 125°C
RG = 68 :
TVJ = 125°C
8
4
0
Eoff
tf
Eon
0
40
0
40
A
0
10
20
30
0
10
20
30
A
IC
IC
Fig. ꢀ3 Typ. turn on energy and switching
times versus collector current
Fig. ꢀ4 Typ. turn off energy and switching
timeversus collector current
10
2.5
mJ
1250
ns
VCE = 600 V
mJ
8
VGE
= 15 V
2.0
1.5
1.0
0.5
0.0
1000
IC = 20 A
TVJ = 125°C
Eoff
Eon
t
td(off)
6
4
2
0
750
500
250
0
Eoff
VCE = 600 V
VGE
= 15 V
IC = 20 A
TVJ = 125°C
tf
200 : 250
:
0
50
100
150
RG
200
0
0
50
100
150
RG
Fig. ꢀ5 Typ. turn on energy ersugate resistor
Fig.ꢀ6 Typ. turn off energy and switching
times versus gate resistor
50
10
diode
K/W
1
A
40
ZthJC
IGBT
ICM
0.1
30
20
10
0
RG = 68 :
T
VJ = 125°C
0.01
0.001
single pulse
0.0001
0.000010.0001 0.001 0.01
0.1
1
10
s
0
200 400 600 800 1000 1200
VCE
V
t
Fig. ꢀ7 Reverse biased safe operating area
Fig. ꢀ8 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
8 - 9
MUBW30-12E6K
Brake Chopper T7 / D7
30
A
25
A
VGE = 15V
25
TVJ = 125°C
IF
IC
20
15
10
5
20
15
10
5
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
0
0
0
1
2
3
4
5
6
0
1
2
3
V
4
V
VF
VCE
Fig. ꢀ9 Typ. output characteristics
Fig. 20 Typ. forward characteristics
of fe wheeling diode
4
400
ns
1.2
mJ
8
600
ns
mJ
Eof
Eoff
Eo
300
200
100
0
3
2
1
0
td(off)
td(off)
t
t
400
VCE = 600V
VCE = 600V
VGE
IC
=
=
15V
20A
VGE
= 15V
RG = 82:
TVJ = 125°C
TVJ = 125°C
200
0
0.4
0.0
tf
tf
Eoff
0
5
10
15
IC
20
0
20
40
60
80
100 120 :
RG
Fig. 2ꢀ Typ. turn off energy nd itching
times versus collectourrnt
Fig. 22 Typ. turn off energy and switching
times versus gate resistor
10
K/W
diode
IGBT
10000
ZthJC
1
:
R
1000
100
0.1
single pulse
0.01
0.01
0.001
0.1
1
10
0
25
50
75
100
125 C 150
s
t
T
Fig. 23 Typ. transient thermal impedance
Fig. 24 Typ. thermistor resistance
versus temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
9 - 9
相关型号：
MUBW40-12T7
Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
LITTELFUSE
MUBW45-12T6K
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25
IXYS
©2020 ICPDF网 联系我们和版权申明