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N0491WC040 [IXYS]

Silicon Controlled Rectifier, 984A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element;
N0491WC040
型号： N0491WC040
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Silicon Controlled Rectifier, 984A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element

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Date:- 9 Oct, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Phase Control Thyristor  
Types N0491WC020 to N0491WC080  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
200-800  
V
V
V
V
200-800  
200-800  
300-900  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current. Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink=25°C, (note 4)  
491  
328  
A
A
176  
A
984  
A
817  
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
6000  
6600  
180×103  
218×103  
500  
A
≤
A
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
≤
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
1000  
5
VRGM  
PG(AV)  
PGM  
VGD  
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
≤
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 1 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS  
UNITS  
(Note 1)  
VTM  
V0  
Maximum peak on-state voltage  
Threshold voltage  
-
-
1.26 ITM=770A  
0.85  
V
V
-
-
-
rS  
Slope resistance  
-
0.535  
Ω
m
dv/dt  
IDRM  
IRRM  
VGT  
IGT  
IH  
Critical rate of rise of off-state voltage  
Peak off-state current  
200  
-
-
VD=80% VDRM, linear ramp, Gate O/C  
Rated VDRM  
µ
V/ s  
-
-
-
-
-
-
-
-
-
-
-
-
20  
mA  
mA  
V
Peak reverse current  
-
20  
Rated VRRM  
Gate trigger voltage  
-
3.0  
150  
Tj=25°C, VD=10V, IT=2A  
Gate trigger current  
-
mA  
mA  
Holding current  
-
600 Tj=25°C  
1.0  
tgd  
Gate controlled turn-on delay time  
Turn-on time  
0.5  
1.0  
250  
160  
65  
5.0  
VD=67%VDRM, ITM=500A, di/dt=10A/µs,  
µs  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgt  
2.0  
Qrr  
Qra  
Irm  
Recovered Charge  
-
µC  
µC  
A
Recovered Charge, 50% chord  
Reverse recovery current  
Reverse recovery time, 50% chord  
225  
I
TM=300A, tp=500µs, di/dt=20A/µs, Vr=50V  
-
-
trr  
µs  
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=20V/µs  
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=200V/µs  
-
-
100  
150  
140  
200  
tq  
Turn-off time  
µs  
-
-
-
-
0.095 Double side cooled  
K/W  
K/W  
kN  
Rth(j-hs) Thermal resistance, junction to heatsink  
0.210 Single side cooled  
F
Mounting force  
Weight  
3.3  
-
-
5.5  
-
Wt  
70  
g
Notes: -  
1) Unless otherwise indicated Tj=125°C.  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 2 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
V
DRM VDSM VRRM  
VRSM  
V
VD VR  
DC V  
140  
210  
260  
Voltage Grade  
V
02  
03  
04  
06  
08  
200  
300  
400  
600  
800  
300  
400  
500  
700  
900  
420  
560  
2.0 Extension of Voltage Grades  
This report is applicable to other and higher voltage grades when supply has been agreed by  
Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
4.0 Repetitive dv/dt  
Standard dv/dt is 1000V/µs.  
5.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
6.0 Gate Drive  
Ω
The recommended pulse gate drive is 30V, 30 with a short-circuit current rise time of not more than  
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.  
The pulse duration may need to be configured according to the application but should be no shorter than  
20µs, otherwise an increase in pulse current may be needed to supply the necessary charge to trigger.  
7.0 Computer Modelling Parameters  
7.1 Device Dissipation Calculations  
∆T  
2
2
WAV =  
−V0 + V0 + 4 ff rs WAV  
Rth  
∆T = Tj max −THs  
I AV =  
and:  
2
2 ff rs  
Ω,  
Where V0=0.85V, rs=0.535m  
Rth  
= Supplementary thermal impedance, see table below.  
ff = Form factor, see table below.  
Supplementary Thermal Impedance  
Conduction Angle  
30°  
60°  
90°  
120°  
180°  
270°  
d.c.  
Square wave Double Side Cooled  
Square wave Single Side Cooled  
Sine wave Double Side Cooled  
Sine wave Single Side Cooled  
0.1125  
0.2277  
0.1089  
0.2231  
0.106  
0.2198  
0.10359 0.10003 0.09634  
0.095  
0.21  
0.2175  
0.2142  
0.2109  
0.10937 0.10497 0.10232 0.10021 0.09531  
0.2232  
0.2182  
0.2156  
0.2137  
0.2095  
Form Factors  
Conduction Angle  
Square wave  
Sine wave  
30°  
3.46  
3.98  
60°  
2.45  
2.78  
90°  
2
2.22  
120°  
1.73  
1.88  
180°  
1.41  
1.57  
270°  
1.15  
d.c.  
1
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 3 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
7.2 Calculating VT using ABCD Coefficients  
The on-state characteristic IT vs. VT, on page 5 is represented in two ways;  
(i)  
the well established V0 and rs tangent used for rating purposes and  
(ii)  
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in  
terms of IT given below:  
VT A B IT C IT D IT  
= + ln( )  
+
+
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The  
resulting values for VT agree with the true device characteristic over a current range, which is limited to  
that plotted.  
25°C Coefficients  
125°C Coefficients  
A
B
C
D
0.5867719  
0.1034432  
6.597532×10-4  
-0.0163  
A
B
C
D
0.022478405  
0.2553937  
9.312906×10-4  
-0.0424168  
7.3 D.C. Thermal Impedance Calculation  
p=n  
−t  
r = r 1− eτ  
p
∑
t
p
p=1  
Where p = 1 to n, n is the number of terms in the series and:  
t =Duration of heating pulse in seconds.  
rt  
=Thermal resistance at time t.  
rp =Amplitude of pth term.  
τp  
=Time Constant of rth term.  
D.C. Double Side Cooled  
Term  
rp  
1
2
3
4
0.049575  
0.34263  
0.032798  
0.10058  
7.7357×10-3  
3.5167×10-3  
3.388×10-3  
0.0432379  
τp  
D.C. Single Side Cooled  
3
Term  
rp  
1
2
4
5
0.135  
3.0077  
0.01177  
1.16261  
0.04364  
0.14258  
0.015709  
0.04504  
2.292×10-3  
2.152267×10-3  
τp  
8.0 Reverse recovery ratings  
(i) Qra is based on 50% Irm chord as shown in Fig. 1.  
µ
(ii) Qrr is based on a 150 s integration time.  
150µs  
Qrr = irr .dt  
∫
i.e.  
0
t1  
(iii)  
K Factor =  
Fig. 1  
t2  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 4 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Curves  
Figure 1 - On-state characteristics of Limit device  
Figure 2 - Transient Thermal Impedance  
1
10000  
N0491WC020-080  
Issue 1  
SSC  
0.21K/W  
Tj = 25°C  
Tj = 125°C  
0.1  
DSC  
0.095K/W  
0.01  
1000  
0.001  
0.0001  
0.00001  
N0491WC020-080  
Issue 1  
100  
0
1
2
3
4
5
1E-05 0.0001 0.001  
0.01  
0.1  
1
10  
100  
Instantaneous On-state voltage - VTM (V)  
Time (s)  
Figure 3 - Gate Characteristics - Trigger Limits  
Figure 4 - Gate Characteristics - Power Curves  
35  
8
N0491WC020-080  
Issue 1  
N0491WC020-080  
Issue 1  
Tj=25°C  
7
Tj=25°C  
30  
Max VG dc  
6
5
4
3
2
25  
Max VG dc  
20  
IGT, VGT  
15  
10  
PG Max 30W dc  
Min VG dc  
5
0
PG 2W dc  
1
IGD, VGD  
Min VG dc  
8
0
0
0.25  
0.5  
0
2
4
6
10  
Gate Current - IG (A)  
Gate Current - IG (A)  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 5 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Figure 5 – Recovered Charge, Qrr  
Figure 6 – Recovered charge, Qra (50% chord)  
1000  
1000  
N0491WC020-080  
Issue 1  
Tj=125°C  
N0491WC020-080  
Issue 1  
Tj=125°C  
1000A  
500A  
300A  
200A  
1000A  
500A  
300A  
200A  
100  
100  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 7 – Reverse recovery current, Irm  
Figure 8 – Reverse recovery time, trr (50% chord)  
100  
1000  
N0491WC020-080  
N0491WC020-080  
Issue 1  
Issue 1  
Tj=125°C  
Tj=125°C  
1000A  
500A  
300A  
200A  
10  
100  
1000A  
500A  
300A  
200A  
1
10  
1
10  
100  
1000  
1
10  
100  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 6 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Figure 9 – On-state current vs. Power dissipation –  
Double Side Cooled (Sine wave)  
Figure 10 – On-state current vs. Heatsink  
temperature - Double Side Cooled (Sine wave)  
1200  
150  
N0491WC020-080  
Issue 1  
180°  
120°  
90°  
1000  
800  
600  
400  
200  
0
125  
100  
75  
60°  
30°  
50  
25  
30°  
60°  
90° 120°  
180°  
N0491WC020-080  
Issue 1  
0
0
200  
400  
600  
800  
0
100  
200  
300  
400  
500  
600  
700  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 11 – On-state current vs. Power dissipation – Figure 12 – On-state current vs. Heatsink  
Double Side Cooled (Square wave)  
temperature - Double Side Cooled (Square wave)  
1200  
150  
N0491WC020-080  
Issue 1  
1000  
800  
600  
400  
200  
0
125  
100  
d.c.  
270°  
180°  
120°  
90°  
60°  
30°  
30°  
60°  
90°  
120°  
180°  
270°  
75  
d.c.  
50  
25  
0
N0491WC020-080  
Issue 1  
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 7 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Figure 13 – On-state current vs. Power dissipation – Figure 14 – On-state current vs. Heatsink  
Single Side Cooled (Sine wave)  
temperature - Single Side Cooled (Sine wave)  
600  
150  
N0491WC020-080  
Issue 1  
500  
125  
100  
75  
180°  
120°  
90°  
60°  
30°  
400  
300  
200  
100  
0
50  
25  
30°  
60°  
90° 120° 180°  
N0491WC020-080  
Issue 1  
0
0
100  
200  
300  
400  
0
100  
200  
300  
400  
Mean forward current (A) (Whole cycle averaged)  
Mean forward current (A) (Whole cycle averaged)  
Figure 15 – On-state current vs. Power dissipation – Figure 16 – On-state current vs. Heatsink  
Single Side Cooled (Square wave)  
temperature - Single Side Cooled (Square wave)  
150  
125  
100  
75  
500  
N0491WC020-080  
Issue 1  
450  
400  
350  
300  
250  
200  
150  
100  
50  
d.c.  
270°  
180°  
120°  
90°  
60°  
30°  
30°  
60°  
90°  
120°  
180°  
270°  
d.c.  
50  
25  
N0491WC020-080  
Issue 1  
0
0
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Mean Forward Current (Amps) (Whole Cycle Averaged)  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 8 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Figure 17 – Maximum surge and I2t Ratings  
100000  
1.00E+07  
N0491WC020-080  
Issue 1  
Tj (initial) = 125°C  
I2t: VRRM ≤10V  
I2t: 60% VRRM  
1.00E+06  
10000  
ITSM: VRRM ≤10V  
ITSM: 60% VRRM  
1000  
1.00E+05  
1
3
5
10  
1
5
10  
50 100  
Duration of surge (ms)  
Duration of surge (cycles @ 50Hz)  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 9 of10  
October, 2001  
WESTCODE Positive development in power electronics  
N0491WC020 to N0491WC080  
Outline Drawing & Ordering Information  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
N0491  
WC  
0
♦ ♦  
Fixed  
Type Code  
Fixed  
Outline Code  
Voltage Code  
02-08  
Fixed turn-off  
time code  
Typical order code: N0491WC060 – 600V VDRM/VRRM, 14.4mm clamp height capsule.  
UK: Westcode Semiconductors Ltd.  
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.  
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448  
E-Mail: WSL.sales@westcode.com  
WESTCODE  
USA: Westcode Semiconductors Inc.  
3270 Cherry Avenue, Long Beach, California 90807  
Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182  
E-Mail: WSI.sales@westcode.com  
Internet: http://www.westcode.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to  
the conditions and limits contained in this report.  
Data Sheet. Types N0491WC020 to N0491WC080 Issue 1.  
Page 10 of10  
October, 2001  

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