N1263CZ48 [IXYS]
Silicon Controlled Rectifier, 4880A I(T)RMS, 4800V V(DRM), 4800V V(RRM), 1 Element, 101A325, 3 PIN;
| 型号： | N1263CZ48 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 4880A I(T)RMS, 4800V V(DRM), 4800V V(RRM), 1 Element, 101A325, 3 PIN |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date : Dec-99
Rat Rep : 99T07
Issue 2
WESTCODE
Converter thyristor
Type N1263xx43xxx to N1263xx52xxx
Absolute maximum ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage, (note 1).
Non-repetitive peak reverse voltage, (note 1).
4300-5200
4300-5200
4300-5200
4400-5300
V
V
V
V
MAXIMUM
LIMITS
RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2).
Mean on-state current. Tsink=85°C, (note 5).
Mean on-state current. Tsink=85°C, (note 3).
Nominal RMS on-state current, 25°C, (note 2).
D.C. on-state current, 25°C, (note 7).
2500
A
A
1750
1080
A
4880
A
4350
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 4).
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 4).
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 4).
I2t capacity for fusing tp=10ms, VRM≤10V, (note 4).
I2t capacity for fusing tp=3ms, VRM≤0.6VRRM, (note 4).
Critical rate of rise of on-state current (continuous), (note 6).
Critical rate of rise of on-state current (intermittent), (note 6).
Peak forward gate current.
37.8x103
42.0x103
7.1x106
8.8x106
5.1x106
150
A
A
A2s
A2s
A2s
A/µs
A/µs
A
I2t
I2t
di/dt
300
IFGM
VRGM
PG(AV)
PGM
VGD
10
Peak reverse gate voltage.
5
V
Mean forward gate power.
5
W
Peak forward gate power.
30
W
Non-trigger gate voltage, (Note 5).
0.25
V
THS
Operating temperature range.
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range.
Notes:-
1) De-rating factor of 0.13% per K is applicable for Tj below 25°C.
2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.
3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, 125°C Tj initial.
5) Rated VDRM.
6) VD=67%VDRM, IT=5000A, IFG=2A, tr=500ns.
7) Doubleside cooled.
Types N1263xx43xxx to N1263xx52xxx Rating Report 99T07
page 1 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Characteristics
UNITS
CHARACTERISTICS
MIN
TYP MAX TEST CONDITIONS
IT=4000A.
VTM Maximum peak on-state voltage.
-
-
-
-
-
-
2.00
1
V
V
V0
RT
Threshold voltage.
Slope resistance.
0.25
mΩ
Critical rate of rise of off-state
voltage.
VD=80% VDRM
.
dv/dt
200
1000
2000
V/µs
Rated VDRM, note 2.
Rated VRRM, note 2.
IDRM Peak off-state current.
IRRM Peak reverse current.
VGT Gate trigger voltage
-
-
-
-
-
-
300
300
3.0
mA
mA
V
Tj=25°C.
Tj=25°C.
IA=3A
VD=10V,
IGT
IH
Gate trigger current
Holding current
-
-
300
mA
-
-
-
1000 Tj=25°C.
mA
K/KW
K/KW
kN
R
-
11
22
77
-
Double side cooled.
Single side cooled.
θ
Thermal resistance junction to
sink.
-
-
-
F
Mounting force.
Weight.
63
-
Wt
1.23
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Leakage current limit, this will be increased in the future to 600mA
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 2 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Notes on Ratings and Characteristics
1 Voltage Grade Table
VDSM VDRM VRRM
VRSM
V
VD VR
Voltage Grade 'H'
V
VDC
.
44
46
48
50
52
4400
4600
4800
5000
5200
4500
4700
4900
5100
5300
2420
2530
2640
2750
2860
2 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for TJ below 25
°C.
4 Repetitive dv/dt
Higher dv/dt selections are available up to 2000V/µs on request.
5 Computer modelling parameters
5.1 Device dissipation calculations
2
−Vo + Vo + 4 ff 2 rs WAV
IAV
=
2 ff 2 rs
Where Vo = 1.00 V, rs = 0.250mΩ
∆T
∆T = TjMax −THs
WAV
=
Rth
Rth
ff
= Supplementary thermal impedance, see table below.
= Form factor, see table below.
Supplementary Thermal Impedance (at 50Hz operating frequency)
Conduction Angle
6 phase (60°)
3 phase (120°)
Half wave (180°)
d.c.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
0.0118
0.0236
0.0116
0.0232
0.0115
0.0230
0.0112
0.0224
0.0112
0.0224
0.0101
0.0202
0.0110
0.0220
Form Factors
Conduction Angle
Square wave
Sine wave
60o
2.45
2.78
120o
1.73
1.88
180o
1.41
1.57
d.c.
1
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 3 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
5.2 Calculating VT using ABCD coefficients
The on-state characteristic IT vs VT, on Fig. 9, is represented in two ways; (i) the well
established V0 and rS tangent and (ii) a set of constants A, B, C, D, forming the coefficients of
the representative equation for VT in terms of IT given below:
VT = A + B.ln(IT ) + C.IT + D. IT
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics where possible. The resulting values for VT agree with the true device
characteristic over a current range, which is limited to that plotted.
125°C Coefficients
25°C Coefficients
A
B
C
D
1.00×1000
A
B
C
D
9.82×10-01
-1.41×10-13
2.60×10-04
1.57×10-14
3.72×10-03
2.61×10-04
-2.93×10-04
5.3 D.C. Thermal impedance calculation
−t
p=n
r = r 1− eτ
p
∑
t
p
p=1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
r = Thermal resistance at time t.
t
rp = Amplitude of p term.
th
τp = Time Constant of r term.
th
D.C. Double Side Cooled
2
Term
1
3
4
5.214×10-03
9.882×10-01
1.901×10-03
3.481×10-01
2.560×10-03
8.720×10-04
r
p
1.147×10-01
8.180×10-03
τ
p
D.C. Single Side Cooled
Term
1
2
3
4
5
r
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
p
p
τ
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 4 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Curves
Figure 1, Maximum on-state characteristic
Figure 2, Transient thermal impedance
10000
100
Tj=25°C
Double side cooled
Single side cooled
Tj=125°C
10
1000
1
0.1
N1263CH43-52
99T07-Issue 2
N1263CH43-52
99T07-Issue 2
100
0.01
0.0001
1
2
3
0.001
0.01
0.1
1
10
100
On state volt drop, VT, (Volts)
Pulse width, tp (seconds).
Figure 3, Maximum non repetitive surge
Figure 4, Gate characteristics, 25°C
1000000
10
Max Peak Vg (rise time of Ig = 1µs)
Pg Max 30W
Pg d.c. 4W
I2t:VRRM =10V
Igt,Vgt
100000
10000
1000
I2t:60%VRRM
Max Vg d.c.
1
ITSM:VRRM=10V
ITSM:60%VRRM
Min Vg d.c.
Igd,Vgd
Tj(initial)=125°C
N1263CH43-52
99T07-Issue 2
N1263CH43-52
99T07-Issue 2
Gate MayTemporarily Lose Control
0.1
0.01
1.00E
1
-03
1.00
1
E
0
-02
1
1.00
5
E-01 10
1.00
5
E+
000
1.00E+01
0.1
1
10
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Gate current, IG, (Amperes).
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 5 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Figure 5, Power dissipation vs. mean
current, sinewave, double side cooled
Figure 6, Power dissipation vs. mean
current, sinewave, single side cooled
10000
5000
15° 30° 60° 90° 120° 180°
9000
15° 30° 60° 90° 120° 180°
4500
8000
7000
6000
5000
4000
3000
2000
1000
4000
3500
3000
2500
2000
1500
1000
500
N1263CH43-52
N1263CH43-52
99T07-Issue 2
99T07-Issue 2
0
0
0
1000
2000
3000
4000
0
500
1000
1500
2000 2500
Mean on-state current, IT(AV) (A)
Mean on-state current, IT(AV) (A)
Figure 7, Heatsink temperature vs. mean
current, sinewave, double side cooled
Figure 8, Heatsink temperature vs. mean
current, sinewave, single side cooled
140
140
N1263CH43-52
99T07-Issue 2
N1263CH43-52
99T07-Issue 2
120
100
80
120
100
80
60
40
20
0
60
40
15° 30° 60° 90° 120° 180°
15° 30° 60° 90° 120° 180°
20
0
0
1000
2000
3000
4000
0
500
1000
1500
2000
2500
Mean on-state current, IT(AV) (A)
Mean on-state current, IT(AV) (A)
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 6 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Figure 9, Power dissipation vs. mean
Figure 10, Power dissipation vs. mean
current, squarewave, double side cooled
current, squarewave, single side cooled
10000
5000
30° 60° 90° 120° 180° DC
4500
30° 60° 90° 120° 180°
DC
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
4000
3500
3000
2500
2000
1500
1000
500
N1263CH43-52
N1263CH43-52
99T07AD- Issue 1
99T07-Issue 2
0
0
1000
2000
3000
4000
5000
0
500
1000
1500
2000
2500
3000
Mean on-state current, IT(AV) (A)
Mean on-state current, IT(AV) (A)
Figure 11, Heatsink temperature vs. mean
current, squarewave, double side cooled
Figure 12, Heatsink temperature vs. mean
current, squarewave, single side cooled
140
140
N1263CH43-52
99T07-Issue 2
N1263CH43-52
99T07-Issue 2
120
100
80
60
40
20
0
120
100
80
60
40
20
0
30° 60° 90° 120° 180°
DC
30° 60° 90° 120° 180°
DC
0
1000
2000
3000
4000
5000
0
500
1000
1500
2000
2500
3000
Mean on-state current, IT(AV) (A)
Mean on-state current, IT(AV) (A)
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 7 of 8
December, 1999
WESTCODE Positive development in power electronics
N1263xx43xxx to N1263xx52xxx
Outline drawing & ordering information
*
Also available in 36mm height
*
[Standard for VRRM>5.2kV)
ORDERING INFORMATION
(Please quote 12 digit code as below)
N1063
♦
♦
♦ ♦
♦ ♦ ♦
Outline Code
dv/dt Code
H – standard
explosion
Z – enhanced
explosion
Blank =
200V/µs
JOO =
GOO =
300V/µs
KOO =
HOO =
400V/µs
LOO =
Fixed
Type Code
Voltage Code
VDRM / 100
C – 26mm Height
D – 36mm Height
500V/µs
750V/µs
1000V/µs
Typical order code : N1263CZ52 – 5.2kV VDRM, 26mm high, enhanced explosion rating capsule thyristor
U.K: Westcode Semiconductors Ltd
P.O. Box 57, Chippenham, England SN15 1JL
Tel: +44 (0)1249444524 Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode.com
WESTCODE
USA: Westcode Semiconductors Inc
3270 Cherry Avenue, Long beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
http:\\www.westcode.com
In the interest of product improvement, Westcode Semiconductors reserves the right to change specifications at any time without notice
Westcode Semiconductors Ltd
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 8 of 8
December, 1999
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