PDM31034SA15SOATR [IXYS]
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32;型号: | PDM31034SA15SOATR |
厂家: | IXYS CORPORATION |
描述: | Standard SRAM, 128KX8, 15ns, CMOS, PDSO32 静态存储器 光电二极管 内存集成电路 |
文件: | 总8页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY
PDM31034
1 Megabit 3.3V Static RAM
128K x 8-Bit
Revolutionary Pinout
1
2
Description
Features
The PDM31034 is a high-performance CMOS static
RAM organized as 131,072 x 8 bits. Writing is
accomplished when the write enable (WE) and the
chip enable (CE) inputs are both LOW. Reading is
accomplished when WE remains HIGH and CE and
OE are both LOW.
■ High-speed access times
Com’l: 9, 10, 12, 15 and 20 ns
Ind’l.: 12, 15 and 20 ns
Automotive: 15 and 20 ns
■ Low power operation (typical)
- PDM31034SA
3
The PDM31034 operates from a single +3.3V power
supply and all the inputs and outputs are fully TTL-
compatible.
Active: 200 mW
Standby: 15 mW
■ Single +3.3V (±0.3V) power supply
■ TTL-compatible inputs and outputs
■ Packages
4
The PDM31034 is available in a 32-pin 400 mil plas-
tic SOJ and 300 mil plastic SOJ, and a 32-pin plastic
TSOP (II) package in revolutionary pinout.
Plastic SOJ (400 mil) - SO
Plastic SOJ (300 mil) - TSO
Plastic TSOP (II) - T
5
6
Functional Block Diagram
7
A8
A0
Memory
Array
512 x 256 x 8
Row
Address
Buffer
Row
Decoder
Addresses
8
(1,048,576)
I/O0
I/O7
9
Input
Data
Control
Column I/O
Column Decoder
10
11
12
Column Address
Buffer
A16
A9
CE
Control
WE
OE
Rev. 1.3
1
PRELIMINARY
PDM31034
Pin Configuration
Pin Description
SOJ
TSOP
A4
1
2
3
4
5
6
7
8
32
31
30
29
A3
A2
1
2
3
4
5
6
7
8
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
Vss
I/O2
I/O3
WE
A16
A15
A14
A13
32
A4
A5
A6
A7
OE
I/O7
I/O6
Vss
Vcc
I/O5
I/O4
A8
A5
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A6
A1
Name
Description
A7
A0
A16-A0
I/O7-I/O0
OE
Address Inputs
Data Inputs/Outputs
Output Enable Input
Write Enable Input
Chip Enable Input
No Connect
OE
I/O7
I/O6
Vss
CE
28
27
26
25
I/O0
I/O1
Vcc
Vss
I/O2
I/O3
WE
A16
A15
A14
A13
WE
24 Vcc
23 I/O5
9
9
CE
10
11
12
13
14
15
16
10
11
12
13
14
NC
I/O4
22
21 A8
20 A9
V
V
Power (+3.3V)
Ground
CC
SS
A9
A10
A11
A12
19
18
17
A10
A11
A12
15
16
(1)
Truth Table
CE
OE
WE
I/O
MODE
L
L
L
X
H
X
H
L
D
Read
Write
OUT
D
IN
L
H
X
Hi-Z
Output Disable
Standby
H
Hi-Z
NOTE: 1. H = V , L = V , X = DON’T CARE
IH
IL
(1)
Absolute Maximum Ratings
Symbol
Rating
Com’l.
Ind.
Auto.
Unit
V
Terminal Voltage with Respect to V
Temperature Under Bias
Storage Temperature
–0.5 to +4.6
–55 to +125
–55 to +125
900
–0.5 to +4.6
–65 to +135
–65 to +150
900
–0.5 to +4.6
–65 to +145
–65 to +150
900
V
°C
TERM
BIAS
STG
SS
T
T
°C
P
Power Dissipation
mW
mA
°C
T
I
DC Output Current
50
50
50
OUT
(2)
T
Maximum Junction Temperature
125
125
125
j
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-
culation should be of the form: T = T + P * θ where T is the ambient temperature, P
j
a
ja
a
is average operating power and θ the thermal resistance of the package. For this
ja
product, use the following θ values:
ja
o
SOJ: 72 C/W
o
TSOP: 95 C/W
2
Rev. 1.3
PRELIMINARY
PDM31034
Recommended DC Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
1
2
V
V
Supply Voltage
3.0
0
3.3
0
3.6
0
V
V
CC
SS
Supply Voltage
Industrial
Ambient Temperature
Ambient Temperature
–40
–0
25
25
85
70
°C
°C
Commercial
3
DC Electrical Characteristics (V = 3.3V ± 0.3V)
CC
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
Input Leakage Current
V
= Max., V = V to V
CC
Com’l/
Ind.
–5
5
µA
LI
CC
IN
SS
4
I
Output Leakage Current
V
= Max.,
Com’l/
Ind.
–5
5
µA
LO
CC
CE = V , V
= V to V
SS CC
IH OUT
(1)
V
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
–0.3
2.2
—
0.8
Vcc+0.3
0.4
V
V
V
V
IL
5
IH
I
I
= 8 mA, V = Min.
CC
OL
OH
OL
= –4 mA, V = Min.
2.4
—
OH
CC
6
NOTE:1.V (min) = –3.0V for pulse width less than 20 ns
IL
7
Power Supply Characteristics
(1)
(1)
-9
-10
-12
-15
-20
Symbol Parameter
Operating Current
CE = V
Com’l.
Com’l. Com’l Ind. Com’l Ind. Auto. Com’l Ind. Auto. Unit
8
I
125
115
110
115
100
105
110
90
95
110
mA
CC
IL
f = f
= 1/t
RC
MAX
V
= Max.
= 0 mA
CC
9
I
OUT
I
Standby Current
CE = V
20
5
20
5
20
5
20
5
20
5
20
5
30
10
20
5
20
5
30
10
mA
mA
SB
IH
f = f
V
= 1/t
RC
MAX
10
11
12
= Max.
CC
I
Full Standby Current
CE ≥ V – 0.2V
SB1
CC
f = 0
V
V
= Max.,
CC
≥ V – 0.2V or ≤ 0.2V
IN
CC
NOTES: All values are maximum guaranteed values.
1. V = 3.3V + 5%
CC
Rev. 1.3
3
PRELIMINARY
PDM31034
(1)
Capacitance (T = +25°C, f = 1.0 MHz)
A
Symbol
Parameter
Max.
Unit
C
C
Input Capacitance
Output Capacitance
8
8
pF
pF
IN
OUT
NOTE:1. This parameter is determined by device characterization but is not production tested.
AC Test Conditions
Input pulse levels
V
to 3.0V
2.5 ns
1.5V
SS
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
1.5V
See Figures 1 and 2
+3.3V
+3.3V
317Ω
317Ω
DOUT
351Ω
DOUT
351Ω
30 pF
5 pF
Figure 2. Output Load Equivalent
(for t , t , t , t , t
Figure 1. Output Load Equivalent
,
LZCE HZCE LZWE HZWE LZOE
t
)
HZOE
4
Rev. 1.3
PRELIMINARY
PDM31034
(4, 5)
Read Cycle No. 1
t
RC
1
2
ADDR
t
AA
t
OH
D
PREVIOUS DATA VALID
DATA VALID
OUT
3
(2, 4, 6)
Read Cycle No. 2
t
RC
4
ADDR
t
AA
t
ACE
CE1
CE2
5
t
t
HZCE
LZCE
6
OE
t
t
HZOE
LZOE
D
OUT
DATA VALID
7
t
AOE
8
AC Electrical Characteristics
Description
-9
-10
-12
-15
-20
9
READ Cycle
Sym
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units
READ cycle time
t
9
10
12
15
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address access time
t
9
9
10
10
12
12
15
15
20
20
AA
10
11
12
Chip enable access time
Output hold from address change
t
ACE
t
3
3
3
3
3
3
3
3
3
3
OH
(1,3)
Chip enable to output in low Z
t
LZCE
HZCE
(1,2,3)
Chip disable to output in high Z
t
5
6
7
8
9
(3)
Chip enable to power up time
t
t
0
0
0
0
0
0
0
0
0
0
PU
PD
(3)
Chip disable to power down time
Output enable access time
9
5
10
6
12
7
15
8
20
9
t
AOE
LZOE
HZOE
(1,3)
(1,3)
Output Enable to output in low Z
t
Output disable to output in high Z
t
5
6
7
8
9
Rev. 1.3
5
PRELIMINARY
PDM31034
Write Cycle No. 1 (Write Enable Controlled)
t
WC
ADDR
t
t
AH
AW
t
CW
CE
t
AS
t
WP
WE
t
t
DH
DS
D
IN
DATA VALID
t
HZWE
t
LZWE
HIGH-Z
D
OUT
Write Cycle No. 2 (Write Enable Controlled)
t
WC
ADDR
t
t
AH
AW
t
CW
CE
t
AS
t
WP
WE
t
t
DH
DS
D
IN
DATA VALID
HIGH-Z
D
OUT
NOTE: Output Enable (OE) is inactive (high)
6
Rev. 1.3
PRELIMINARY
PDM31034
Write Cycle No. 3 (Chip Enable Controlled)
t
WC
1
2
ADDR
t
t
AH
AW
t
t
AS
CW
CE
t
WP
t
WE
3
t
DS
DH
D
IN
DATA VALID
4
HIGH-Z
D
OUT
NOTE: Output Enable (OE) is inactive (high)
5
AC Electrical Characteristics
6
Description
-9
-10
-12
-15
-20
WRITE Cycle
Sym
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units
WRITE cycle time
t
t
9
8
8
0
0
7
5
0
0
10
9
12
10
10
0
15
11
11
0
20
12
12
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
WC
Chip enable active time
Address valid to end of write
Address setup time
CW
t
9
AW
t
0
AS
AH
WP
8
Address hold from end of write
Write pulse width
t
0
0
0
0
t
t
8
9
10
8
11
9
Data setup time
t
6
7
DS
9
Data hold time
0
0
0
0
DH
(1,3)
(1,3)
Write disable to output in low Z
t
0
0
0
0
LZWE
HZWE
Write enable to output in high Z
t
6
7
7
8
9
10
11
12
NOTES: (For two previous Electrical Characteristics tables)
1. The parameter is tested with C = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.
L
2. At any given temperature and voltage condition, t
3. This parameter is sampled.
is less than t
.
HZCE
LZCE
4. WE is high for a READ cycle.
5. The device is continuously selected. Chip Enable is held in their active state.
6. The address is valid prior to or coincident with the latest occuring Chip Enable.
Rev. 1.3
7
PRELIMINARY
PDM31034
Ordering Information
XXXXX
X
XX
X
X
X
Speed
Device Type Power
Package
Type
Process
Temp. Range
Preferred
Shipping
Container
Blank Tubes
TR
TY
Tape & Reel
Tray
Blank
I
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
Automotive (–40°C to +105°C)
A
SO 32-pin 400 mil Plastic SOJ
TSO 32-pin 300 mil Plastic SOJ
T
32-pin Plastic TSOP (II)
9
Commercial Only
10
12
15
20
SA
Standard Power
PDM31034 - (128Kx8) Static RAM
Faster Memories for a FasterWorld ™
8
Rev. 1.3
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