PDM31034SA9TSOTY [IXYS]

Standard SRAM, 128KX8, 9ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32;


型号：	PDM31034SA9TSOTY
厂家：	IXYS CORPORATION
描述：	Standard SRAM, 128KX8, 9ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 静态存储器光电二极管内存集成电路
文件：	总8页 (文件大小：309K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY

PDM31034

1 Megabit 3.3V Static RAM

128K x 8-Bit

Revolutionary Pinout

Description

Features

The PDM31034 is a high-performance CMOS static

RAM organized as 131,072 x 8 bits. Writing is

accomplished when the write enable (WE) and the

chip enable (CE) inputs are both LOW. Reading is

accomplished when WE remains HIGH and CE and

OE are both LOW.

■ High-speed access times

Com’l: 9, 10, 12, 15 and 20 ns

Ind’l.: 12, 15 and 20 ns

Automotive: 15 and 20 ns

■ Low power operation (typical)

- PDM31034SA

The PDM31034 operates from a single +3.3V power

supply and all the inputs and outputs are fully TTL-

compatible.

Active: 200 mW

Standby: 15 mW

■ Single +3.3V (±0.3V) power supply

■ TTL-compatible inputs and outputs

■ Packages

The PDM31034 is available in a 32-pin 400 mil plas-

tic SOJ and 300 mil plastic SOJ, and a 32-pin plastic

TSOP (II) package in revolutionary pinout.

Plastic SOJ (400 mil) - SO

Plastic SOJ (300 mil) - TSO

Plastic TSOP (II) - T

Functional Block Diagram

Memory

Array

512 x 256 x 8

Row

Address

Buffer

Row

Decoder

Addresses

(1,048,576)

I/O0

I/O7

Input

Data

Control

Column I/O

Column Decoder

Column Address

Buffer

A16

Control

Rev. 1.3

PRELIMINARY

PDM31034

Pin Conﬁguration

Pin Description

SOJ

TSOP

I/O0

I/O1

Vcc

Vss

I/O2

I/O3

A16

A15

A14

A13

I/O7

I/O6

Vss

Vcc

I/O5

I/O4

Name

Description

A16-A0

I/O7-I/O0

Address Inputs

Data Inputs/Outputs

Output Enable Input

Write Enable Input

Chip Enable Input

No Connect

I/O7

I/O6

Vss

I/O0

I/O1

Vcc

Vss

I/O2

I/O3

A16

A15

A14

A13

24 Vcc

23 I/O5

I/O4

21 A8

20 A9

Power (+3.3V)

Ground

A10

A11

A12

A10

A11

A12

(1)

Truth Table

I/O

MODE

Read

Write

OUT

Hi-Z

Output Disable

Standby

Hi-Z

NOTE: 1. H = V , L = V , X = DON’T CARE

(1)

Absolute Maximum Ratings

Symbol

Rating

Com’l.

Ind.

Auto.

Unit

Terminal Voltage with Respect to V

Temperature Under Bias

Storage Temperature

–0.5 to +4.6

–55 to +125

900

–0.5 to +4.6

–65 to +135

–65 to +150

900

–0.5 to +4.6

–65 to +145

–65 to +150

900

°C

TERM

BIAS

STG

°C

Power Dissipation

°C

DC Output Current

OUT

(2)

Maximum Junction Temperature

125

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the

operational sections of this speciﬁcation is not implied. Exposure to absolute maxi-

mum rating conditions for extended periods may affect reliability.

2. Appropriate thermal calculations should be performed in all cases and speciﬁcally for

those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-

culation should be of the form: T = T + P * θ where T is the ambient temperature, P

is average operating power and θ the thermal resistance of the package. For this

product, use the following θ values:

SOJ: 72 C/W

TSOP: 95 C/W

Rev. 1.3

PRELIMINARY

PDM31034

Recommended DC Operating Conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

3.0

3.3

3.6

Supply Voltage

Industrial

Ambient Temperature

–40

–0

°C

Commercial

DC Electrical Characteristics (V = 3.3V ± 0.3V)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Input Leakage Current

= Max., V = V to V

Com’l/

Ind.

–5

µA

Output Leakage Current

= Max.,

Com’l/

Ind.

–5

µA

CE = V , V

= V to V

SS CC

IH OUT

(1)

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

–0.3

2.2

—

0.8

Vcc+0.3

0.4

= 8 mA, V = Min.

= –4 mA, V = Min.

2.4

—

NOTE:1.V (min) = –3.0V for pulse width less than 20 ns

Power Supply Characteristics

(1)

-9

-10

-12

-15

-20

Symbol Parameter

Operating Current

CE = V

Com’l.

Com’l. Com’l Ind. Com’l Ind. Auto. Com’l Ind. Auto. Unit

125

115

110

115

100

105

110

f = f

= 1/t

MAX

= Max.

= 0 mA

OUT

Standby Current

CE = V

f = f

= 1/t

MAX

= Max.

Full Standby Current

CE ≥ V – 0.2V

SB1

f = 0

= Max.,

≥ V – 0.2V or ≤ 0.2V

NOTES: All values are maximum guaranteed values.

1. V = 3.3V + 5%

Rev. 1.3

PRELIMINARY

PDM31034

(1)

Capacitance (T = +25°C, f = 1.0 MHz)

Symbol

Parameter

Max.

Unit

Input Capacitance

Output Capacitance

OUT

NOTE:1. This parameter is determined by device characterization but is not production tested.

AC Test Conditions

Input pulse levels

to 3.0V

2.5 ns

1.5V

Input rise and fall times

Input timing reference levels

Output reference levels

Output load

1.5V

See Figures 1 and 2

+3.3V

317Ω

D_OUT

351Ω

D_OUT

351Ω

30 pF

5 pF

Figure 2. Output Load Equivalent

(for t , t , t , t , t

Figure 1. Output Load Equivalent

LZCE HZCE LZWE HZWE LZOE

)

HZOE

Rev. 1.3

PRELIMINARY

PDM31034

(4, 5)

Read Cycle No. 1

ADDR

PREVIOUS DATA VALID

DATA VALID

OUT

(2, 4, 6)

Read Cycle No. 2

ADDR

ACE

CE1

CE2

HZCE

LZCE

HZOE

LZOE

OUT

DATA VALID

AOE

AC Electrical Characteristics

Description

-9

-10

-12

-15

-20

READ Cycle

Sym

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units

READ cycle time

Address access time

Chip enable access time

Output hold from address change

ACE

(1,3)

Chip enable to output in low Z

LZCE

HZCE

(1,2,3)

Chip disable to output in high Z

(3)

Chip enable to power up time

(3)

Chip disable to power down time

Output enable access time

AOE

LZOE

HZOE

(1,3)

Output Enable to output in low Z

Output disable to output in high Z

Rev. 1.3

PRELIMINARY

PDM31034

Write Cycle No. 1 (Write Enable Controlled)

ADDR

DATA VALID

HZWE

LZWE

HIGH-Z

OUT

Write Cycle No. 2 (Write Enable Controlled)

ADDR

DATA VALID

HIGH-Z

OUT

NOTE: Output Enable (OE) is inactive (high)

Rev. 1.3

PRELIMINARY

PDM31034

Write Cycle No. 3 (Chip Enable Controlled)

ADDR

DATA VALID

HIGH-Z

OUT

NOTE: Output Enable (OE) is inactive (high)

AC Electrical Characteristics

Description

-9

-10

-12

-15

-20

WRITE Cycle

Sym

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units

WRITE cycle time

Chip enable active time

Address valid to end of write

Address setup time

Address hold from end of write

Write pulse width

Data setup time

Data hold time

(1,3)

Write disable to output in low Z

LZWE

HZWE

Write enable to output in high Z

NOTES: (For two previous Electrical Characteristics tables)

1. The parameter is tested with C = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.

2. At any given temperature and voltage condition, t

3. This parameter is sampled.

is less than t

HZCE

LZCE

4. WE is high for a READ cycle.

5. The device is continuously selected. Chip Enable is held in their active state.

6. The address is valid prior to or coincident with the latest occuring Chip Enable.

Rev. 1.3

PRELIMINARY

PDM31034

Ordering Information

XXXXX

Speed

Device Type Power

Package

Type

Process

Temp. Range

Preferred

Shipping

Container

Blank Tubes

Tape & Reel

Tray

Blank

Commercial (0° to +70°C)

Industrial (–40°C to +85°C)

Automotive (–40°C to +105°C)

SO 32-pin 400 mil Plastic SOJ

TSO 32-pin 300 mil Plastic SOJ

32-pin Plastic TSOP (II)

Commercial Only

Standard Power

PDM31034 - (128Kx8) Static RAM

Faster Memories for a FasterWorld ^™

Rev. 1.3

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