R1271NC12E [IXYS]
Silicon Controlled Rectifier, 2050000mA I(T), 1200V V(DRM),;
| 型号： | R1271NC12E |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 2050000mA I(T), 1200V V(DRM), 栅 栅极 |
| 文件： | 总12页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 01 August 2012
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R1271NC12x
Absolute Maximum Ratings
MAXIMUM
LIMITS
1200
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
V
V
V
V
1200
1200
1300
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1271
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
A
A
821
458
A
2599
A
2050
A
18.0
kA
kA
A2s
A2s
A/µs
A/µs
V
19.8
1.62×106
1.96×106
1000
I2t
(di/dt)cr
1500
VRGM
PG(AV)
PGM
VGD
5
Mean forward gate power
2
W
Peak forward gate power
30
W
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Type R1271NC12x Issue 2
Page 1 of 12
August 2012
Distributed gate thyristor R1271NC12x
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
Threshold voltage
-
-
2.02 ITM=2000A
1.547
V
V
-
-
-
VT0
rT
Slope resistance
-
0.237
mΩ
V/µs
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
-
VD=80% VDRM, Linear ramp
IDRM
IRRM
VGT
IGT
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
-
-
-
-
-
150 Rated VDRM
150 Rated VRRM
3.0 Tj=25°C
300 Tj=25°C
1000 Tj=25°C
1.0
mA
-
-
V
Gate trigger current
-
VD=10V, IT=2A
mA
mA
Holding current
-
tgd
Gate controlled turn-on delay time
Turn-on time
0.5
1.0
200
120
85
2.0
VD=67%VDRM, ITM=2000A, di/dt=60A/µs,
µs
tgt
2.0 IFG=2A, tr≤0.5µs, Tcase=25°C
Qrr
Qra
Irm
Recovered charge
-
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% chord
150
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
-
-
trr
µs
I
TM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
TM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
-
-
-
22
25
tq
Turn-off time (note 2)
µs
I
12
-
-
-
0.024 Double side cooled
RthJK
Thermal resistance, junction to heatsink
K/W
-
-
0.048 Single side cooled
F
Mounting force
Weight
19
-
26
-
kN
g
Wt
510
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R1271NC12x Issue 2
Page 2 of 12
August 2012
Distributed gate thyristor R1271NC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
DRM VDSM VRRM
VRSM
V
1300
VD VR
DC V
810
Voltage Grade
12
V
1200
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
f max =
tpulse +tq +tv
Data Sheet. Type R1271NC12x Issue 2
Page 3 of 12
August 2012
Distributed gate thyristor R1271NC12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP ⋅ f and TSINK (max.) =125 −
WAV ⋅ Rth
(
J −Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150µs
Qrr = irr .dt
i.e.
∫
0
t1
K Factor =
(iii)
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TSINK (new) = TSINK (original ) − E ⋅
k + f ⋅ Rth
(
J −Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s)
f = Rated frequency (in Hz) at the original heat sink temperature
th(J-Hs) = D.C. thermal resistance (°C/W)
R
Data Sheet. Type R1271NC12x Issue 2
Page 4 of 12
August 2012
Distributed gate thyristor R1271NC12x
The total dissipation is now given by:
W(TOT) = W(original) + E ⋅ f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
= TSINK
−
)
E ⋅ Rth ⋅ f
)
(
new
)
(
original
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
di
CS ⋅
dt
R2 = 4⋅
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to
trigger the device.
Data Sheet. Type R1271NC12x Issue 2
Page 5 of 12
August 2012
Distributed gate thyristor R1271NC12x
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ln
IT + C ⋅ IT + D ⋅ IT
)
The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for VT agree with the true device characteristic over a current range, which
is limited to that plotted.
125°C Coefficients
A
B
C
D
1.520747638
8.42314×10-3
2.47082×10-4
-1.30505×10-3
14.2 D.C. Thermal Impedance Calculation
−t
τ p
p=n
⎛
⎞
⎟
⎜
p
r = r ⋅ 1− e
∑
t
⎜
⎟
⎠
p=1
⎝
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
= Time Constant of rth term.
τp
D.C. Double Side Cooled
3
Term
rp
1
2
4
5
0.01249139
0.8840810
6.316833×10-3
1.850855×10-3
1.922045×10-3
6.742908×10-3
6.135330×10-4
1.326292×10-3
0.1215195
0.03400152
τp
D.C. Single Side Cooled
3
Term
rp
1
2
4
5
6
4.863568×10-
6.818034×10- 2.183558×10-
0.02919832
6.298105
3.744798×10-3
1.848294×10-3
3.379476×10-3
3
3
3
3.286174
0.5359179
0.1186897
0.02404574
τp
Data Sheet. Type R1271NC12x Issue 2
Page 6 of 12
August 2012
Distributed gate thyristor R1271NC12x
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.048K/W
DSC 0.024K/W
Tj = 125°C
0.01
1000
0.001
0.0001
R1271NC12x
R1271NC12x
Issue 2
Issue 2
100
0.00001
0.0001 0.001
0
1
2
3
4
0.01
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
Time (s)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
6
R1271NC12x
Issue 2
R1271NC12x
Issue 2
Tj=25°C
18
Tj=25°C
5
16
14
Max VG dc
4
Max VG dc
12
IGT, VGT
10
8
3
PG Max 30W dc
2
6
4
1
PG 2W dc
Min VG dc
2
IGD, VGD
Min VG dc
0
0
0
2
4
6
8
10
0
0.25
0.5
0.75
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Data Sheet. Type R1271NC12x Issue 2
Page 7 of 12
August 2012
Distributed gate thyristor R1271NC12x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
1000
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
100
Tj = 125°C
Tj = 125°C
R1271NC12x
R1271NC12x
Issue 2
Issue 2
100
10
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
1000
10
2000A
1500A
1000A
500A
100
2000A
1500A
1000A
500A
Tj = 125°C
Tj = 125°C
R1271NC12x
R1271NC12x
Issue 2
Issue2
10
1
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Data Sheet. Type R1271NC12x Issue 2
Page 8 of 12
August 2012
Distributed gate thyristor R1271NC12x
Figure 9 - Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1
R1271NC12x
Issue 2
Tj=125°C
2000A
1000A
5kA
3kA
2kA
500A
0.1
250A
1kA
500A
250A
Snubber:
0.25µF,5Ω
Tj = 125°C
Vrm = 67% VRRM
R1271NC12x
Issue 2
0.01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
10
100
Commutation rate - di/dt (A/µs)
1000
Pulse width (s)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R1271NC12x
Issue 2
500A
THs=55°C
500A
1kA
100% Duty Cycle
100% Duty Cycle
1kA
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E+04
1.00E+03
1.00E+02
1.00E+01
2kA
3kA
2kA
3kA
5kA
5kA
THs=85°C
R1271NC12x
Issue 2
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Data Sheet. Type R1271NC12x Issue 2
Page 9 of 12
August 2012
Distributed gate thyristor R1271NC12x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
500A
500A
1kA
1kA
100% Duty Cycle
100% Duty Cycle
1.00E+04
2kA
3kA
2kA
1.00E+03
1.00E+02
1.00E+01
1.00E+00
5kA
3kA
5kA
THs=55°C
di/dt=500A/µs
11
THs=55°C
di/dt=100A/µs
R1271NC12x
R1271NC12x
Issue 2
Issue 2
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
250A
100% Duty Cycle
500A
500A
1.00E+04
100% Duty Cycle
1kA
1.00E+04
1kA
2kA
1.00E+03
1.00E+02
1.00E+01
1.00E+00
2kA
3kA
5kA
3kA
1.00E+03
5kA
1.00E+02
THs=85°C
THs=85°C
di/dt=100A/µs
di/dt=500A/µs
R1271NC12x
R1271NS10x-12x
R1271NC12x
Issue 2
Issue 2
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Type R1271NC12x Issue 2
Page 10 of 12
August 2012
Distributed gate thyristor R1271NC12x
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
R1271NC12x
R1271NC12x
Issue 2
Issue2
di/dt=100A/µs
Tj=125°C
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
5kA
3kA
2kA
5kA
3kA
2kA
1kA
1kA
500A
250A
500A
250A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+08
1.00E+07
1.00E+06
1.00E+05
I2t: VRRM≤10V
I2t: 60% VRRM
ITSM: VRRM≤10V
ITSM: 60% VRRM
Tj (initial) = 125°C
R1271NC12x
Issue 2
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Type R1271NC12x Issue 2
Page 11 of 12
August 2012
Distributed gate thyristor R1271NC12x
Outline Drawing & Ordering Information
101A223
ORDERING INFORMATION
(Please quote 10 digit code as below)
R1271
Fixed
Type Code
NC
Fixed
Outline Code
♦ ♦
♦
Off-state Voltage Code
tq Code (@ 200V/µs)
B=12µs, C=15µs, D=20µs,
E=25µs
VDRM/100
12
Typical order code: R1271NC12D – 1200V VDRM, 20µs tq, 27.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Long Beach
IXYS Long Beach, Inc
IXYS Corporation
1590 Buckeye Drive
2500 Mira Mar Ave, Long Beach
CA 90815
www.ixysuk.com
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Tel: +1 (562) 296 6584
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Fax: +1 (562) 296 6585
E-mail: service@ixyslongbeach.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Type R1271NC12x Issue 2
Page 12 of 12
August 2012
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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