R325CH08FJ7 [IXYS]

Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 800V V(DRM), 560V V(RRM), 1 Element,;


型号：	R325CH08FJ7
厂家：	IXYS CORPORATION
描述：	Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 800V V(DRM), 560V V(RRM), 1 Element,
文件：	总12页 (文件大小：282K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 21 Dec, 2000

Data Sheet Issue:- 1

WESTCODE

Distributed Gate Thyristor

Types R325CH02 to R325CH14

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

200-1400

300-1500

MAXIMUM

LIMITS

1178

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

767

433

2395

892

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

A²s

A/µs

≤

18.7

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

1.45×10⁶

1.75×10⁶

1000

1500

I²t

≤

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 1 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

V_TM

Maximum peak on-state voltage

Threshold voltage

2.2 I_TM=2000A

1.6

V₀

r_S

Slope resistance

0.3

Ω

dv/dt Critical rate of rise of off-state voltage

200 V_D=80% V_DRM

150 Rated V_DRM

150 Rated V_RRM

3.0 T_j=25°C

300 T_j=25°C

1000 T_j=25°C

V/ s

I_DRM

I_RRM

V_GT

I_GT

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Holding current

V_D=10V, I_T=2A

I_H

_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V

_TM=1000A, t_p=1000µs, di/dt=60A/µs,

Q_ra

Recovered charge, 50% Chord

170

190

µC

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time

µs

0.024 Double side cooled

Thermal resistance, junction to

heatsink

K/W

0.048 Single side cooled

Mounting force

Weight

W_t

510

Notes:-

1) Unless otherwise indicated T_j=125°C.

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 2 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

R325CH02 to R325CH14

_DRMV_DSMV_RRM

V_RSM

V_DV_R

DC V

140

260

420

560

700

810

930

Voltage Grade 'H'

200

400

600

210

410

610

810

1100

1300

1400

800

1000

1200

1400

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

^max=

t^pulse+t^q+t^v

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 3 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

−

(

)

W_AVE_Pf and T_{SINK (max.)}125 W_AVR_th

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

i.e.

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from the following:

−

(

)

T_{SINK (new)}T_{SINK (original)}E k f R_th

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s)

f = Rated frequency (in Hz) at the original heat sink temperature

R_th(J-Hs)= D.C. thermal resistance (°C/W)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 4 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

The total dissipation is now given by:

W_(TOT)= W_(original)+ E f

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_SINK

−

E R_thf

(

)

(

new

)

(

original

)

Where T_{SINK (new)}is the required maximum heat sink temperature and

T_{SINK (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1

- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

R²= 4

C_S

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

= Snubber resistance

13.0 Gate Drive

Ω

The recommended pulse gate drive is 20V, 10 with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to

trigger the device.

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 5 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

14.0 Computer Modelling Parameters

14.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs. V_T, on page 7 is represented in two ways;

(i)

the well established V₀and r_stangent used for rating purposes and

(ii)

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

= +

( )

V_TA B ln I_TC I_TD I_T

The constants, derived by curve fitting software, are given in this report for hot characteristics where

possible. The resulting values for V_Tagree with the true device characteristic over a current range, which

is limited to that plotted.

125°C Coefficients

0.62329615

0.2341749

4.506305×10^-4

-0.02469732

14.2 D.C. Thermal Impedance Calculation

−

p n

r = r 1− e^τ

∑

p 1

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p

= Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

0.01249139

0.8840810

6.316833×10^-3

1.850855×10^-3

1.922045×10^-3

6.742908×10^-3

6.135330×10^-4

1.326292×10^-3

0.1215195

0.03400152

τ_p

D.C. Single Side Cooled

4.863568×10^-33.744798×10^-36.818034×10^-32.183558×10^-31.848294×10^-3

Term

r_p

0.02919832

6.298105

3.286174

0.5359179

0.1186897

0.02404574

3.379476×10^-3

τ_p

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 6 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

0.1

SSC 0.048K/W

DSC 0.024K/W

T_j= 125°C

0.01

1000

0.001

0.0001

R325CH02-14

Issue 1

R325CH02-14

Issue 1

100

0.00001

0.0001

0.001

0.01

0.1

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

R325CH02-14

Issue 1

T_j=25°C

Max V_Gdc

I_GT, V_GT

P_GMax 30W dc

P_G2W dc

Min V_Gdc

I_GD, V_GD

Min V_Gdc

0.25

0.5

0.75

Gate Trigger Current - I_GT(A)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 7 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

1000

100

1000

1000A

500A

2000A

1000A

500A

250A

100

T_j= 125°C

R325CH02-14

Issue 1

R325CH02-14

Issue 1

100

Commutation rate - di/dt (A/µs)

1000

100

Commutation rate - di/dt (A/µs)

1000

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

1000

2000A

1000A

500A

250A

2000A

1000A

100

500A

250A

T_j= 125°C

R325CH02-14

Issue 1

R325CH02-14

Issue 1

100

1000

100

Commutation rate - di/dt (A/µs)

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 8 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Figure 9 - Reverse recovery energy per pulse

Figure 10 - Sine wave energy per pulse

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R325CH02-14

Issue 1

T_j=125°C

2000A

1000A

5kA

500A

3kA

2kA

0.1

250A

1kA

Snubber:

0.25µF,3

Ω

T_j= 125°C

500A

V_rm= 67% V_RRM

R325CH02-14

Issue 1

250A

0.01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

100

Commutation rate - di/dt (A/µs)

1000

Pulse width (s)

Figure 11 - Sine wave frequency ratings

Figure 12 - Sine wave frequency ratings

1.00E+05

R325CH02-14

Issue 1

500A

T_Hs=55°C

500A

100% Duty Cycle

1.00E+04

1kA

1.00E+04

2kA

3kA

1.00E+03

3kA

1.00E+03

1.00E+02

1.00E+01

1.00E+02

5kA

1.00E+01

T_Hs=85°C

R325CH02-14

Issue 1

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse Width (s)

Pulse width (s)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 9 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Figure 13 - Square wave frequency ratings

Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

500A

1kA

100% Duty Cycle

1.00E+04

2kA

3kA

1.00E+03

3kA

5kA

1.00E+02

1.00E+01

T_Hs=55°C

di/dt=500A/µs

di/dt=100A/µs

R325CH02-14

Issue 1

R325CH02-14

Issue 1

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+05

250A

100% Duty Cycle

1.00E+04 500A

500A

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1kA

1.00E+03

1.00E+02

1.00E+01

1.00E+00

2kA

3kA

5kA

T_Hs=85°C

di/dt=100A/µs

di/dt=500A/µs

R325CH02-14

Issue 1

R325CH02-14

Issue 1

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 10 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Figure 17 - Square wave energy per pulse

Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R325CH02-14

Issue 1

R325CH02-14

Issue 1

di/dt=100A/µs

T_j=125°C

di/dt=500A/µs

T_j=125°C

1.00E+02

5kA

3kA

2kA

1.00E+01

5kA

3kA

1.00E+00

2kA

1kA

1.00E-01 500A

1kA

500A

250A

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+07

1.00E+06

1.00E+05

I²t: V_RRM10V

≤

I²t: 60% V_RRM

≤

I_TSM: V_RRM10V

I_TSM: 60% V_RRM

T_j(initial) = 125°C

R325CH02-14

Issue 1

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 11 of 12

December, 2000

WESTCODE ^{Positive development in power electronics}

R325CH02 to R325CH14

Outline Drawing & Ordering Information

ORDERING INFORMATION

(Please quote 11 or 12 digit code as below)

R325

♦ ♦

♦

♦ (♦ )

♦

Fixed

Type Code

Fixed

Outline Code

Off-state Voltage Code

V_DRM/100

dv/dt Code

C=20V/µs, D=50V/µs,

E=100V/µs, F=200V/µs

t_qCode (@ 200V/µs)

J=25µs, H=30µs,

G=35µs, 2K=40µs

V_RRMcode

See note 1

below

02-14

Note 1.: A single digit represents V_RRMin 10% increments of the selected V_DRM

A zero in this position indicates that V_RRM=100% V_DRM. The examples shown below are for 70% and 100% respectively.

Typical order code: R325CH10F2K7 – 1000V V_DRM, 700V V_RRM, 200V/µs dv/dt, 40µs t_q, 27.7mm clamp height capsule.

Typical order code: R325CH10F2K0 – 1000V V_DRM, 1000V V_RRM, 200V/µs dv/dt, 40µs t_q, 27.7mm clamp height capsule.

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448

WESTCODE

E-Mail: WSL.sales@westcode.com

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: 562 595 6971 Fax: 562 595 8182

E-Mail: WSI.sales@westcode.com

Internet: http://www.westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or

disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors

Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior

notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject

to the conditions and limits contained in this report.

Data Sheet. Types R325CH02 to R325CH14 Issue 1

Page 12 of 12

December, 2000

R325CH08FJ7 [IXYS]

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