R500CH20C2G3 [IXYS]

Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 600V V(RRM), 1 Element, 101A281, 3 PIN;


型号：	R500CH20C2G3
厂家：	IXYS CORPORATION
描述：	Silicon Controlled Rectifier, 4980A I(T)RMS, 2000V V(DRM), 600V V(RRM), 1 Element, 101A281, 3 PIN
文件：	总13页 (文件大小：357K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 11 Jan, 2000

Data Sheet Issue:- 1

WESTCODE

Distributed Gate Thyristor

Types R500CH20 to R500CH28

Absolute Maximum Ratings

MAXIMUM

LIMITS

2000-2800

2100-2900

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

2475

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, 25°C, (note 2)

D.C. on-state current, 25°C, (note 4)

A²s

A/µs

°C

1645

950

4980

4100

31.0

34.1

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

≤

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

4.81×10⁶

5.81×10⁶

1000

1500

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

Storage temperature range

di_T/dt

V_RGM

P_G(AV)

P_GM

V_GD

T_HS

T_stg

0.25

-40 to +125

-40 to +150

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 1 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Characteristics

UNIT

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

(Note 1)

V_TM

Maximum peak on-state voltage

Threshold voltage

2.55 I_TM=5700A

1.504

V₀

r_S

Slope resistance

0.174

Ω

Critical rate of rise of off-state

voltage

dv/dt

200 V_D=80% V_DRM

V/ s

I_DRM

I_RRM

V_GT

I_GT

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Holding current

300 Rated V_DRM

300 Rated V_RRM

3.0

T_j=25°C

300 T_j=25°C

1000 T_j=25°C

V_D=10V, I_T=3A

I_H

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_R=100V

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_R=100V, V_DR=67%V_DRM, dV_DR/dt=200V/µs

Q_RA

t_q

Recovered charge, 50% Chord

Turn-off time

1450

µC

µs

100

0.011 Double side cooled

K/W

Thermal resistance, junction to

heatsink

0.022 Single side cooled

Mounting force

Weight

W_t

1.7

Notes:-

1) Unless otherwise indicated T_j=125°C.

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 2 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

R500CH20 to R500CH28

_DRMV_DSMV_RRM

V_RSM

V_DV_R

DC V

1250

1350

1450

1550

1650

Voltage Grade 'H'

2000

2200

2400

2600

2800

2100

2300

2500

2700

2900

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25^oC.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not

exceed 300 A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

^max=

_tpulse+_tq+_tv

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 3 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

= ⋅

−

(

⋅

)

W_AVE_Pf and T_{SINK (max.)}125 W_AVR_th

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_RAis based on 50% I_RMchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_RRis based on a 150 s integration time.

150µs

Q_RR= i_RR.dt

∫

i.e.

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

− ⋅

(

+ ⋅

)

T_{SINK (new)}T_{SINK (original)}E k f R_th

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W).

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 4 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

The total dissipation is now given by:

+ ⋅

E f

W_(TOT)W_(original)

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_SINK

(

−

)

(

E R_thf

⋅ ⋅

)

(

new

)

original

where T_{SINK (new)}is the required maximum heat sink temperature and

T_{SINK (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

waveform to a peak value (V_RM) of 67% of the maximum grade. If a different grade is being used or V_RMis

other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum

value obtained from the curves.

NOTE 1

- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_R

C_S⋅

R²= 4⋅

Where: V_R= Commutating source voltage

C_S= Snubber capacitance

= Snubber resistance

13.0 Gate Drive

Ω

The recommended pulse gate drive is 20V, 10 with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in

charge to trigger.

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 5 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

14.0 Computer Modelling Parameters

14.1 Calculating V_Tusing ABCD Coefficients

R500CH20 to R500CH28

The on-state characteristic I_Tvs V_T, on page 11 is represented in two ways; (i) the well established V_oand

r_stangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the

representative equation for V_Tin terms of I_Tgiven below:

= + ⋅ ( )

( )

V_TA B ln I_TC. I_TD. I_T

The constants, derived by curve fitting software, are given in this report for hot characteristics where

possible. The resulting values for V_Tagree with the true device characteristic over a current range which is

limited to that plotted.

25°C Coefficients

125°C Coefficients

2.55370235

9.282949×10^-3

1.261395×10^-4

-0.01063571

1.91935125

-2.537837×10^-3

2.602254×10^-4

-0.01168784

14.2 D.C. Thermal Impedance Calculation

−

τ _p

p n









r = r ⋅ 1− e

∑









p 1

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t

= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p

= Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

τ_p

3.9923×10^-3

3.78878×10^-3

1.350742×10^-3

1.378728×10^-3

4.276688×10^-4

6.863691×10^-3

1.046993

0.3853506

0.1243419

0.01277299

D.C. Single Side Cooled

Term

r_p

τ_p

0.01254722

10.41272

4.466491×10^-3

3.518626×10^-3

1.791548×10^-3

9.884119×10^-3

1.051407

0.1929561

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 6 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

14.3 Recovery parameter estimation

Maximum recovery parameters may be calculated, using the polynomial expression:

^p



= −

p n 1







y =

k ⋅

∑



p 0

Where: y = recovery parameter (Q_RR, Q_RA, I_RMor t_RR

)

k_p= coefficient found in the relevant table below,

= number of terms in the series,

= term number

Total Recovered Charge Q_RR(Valid di/dt range 20 to 300A/µs)

Values of k_pfor Q_RR

500A

1000A

2000A

3000A

-7.2790483×10^-7

5.2077175×10^-7

-0.13827272

-1.16345461×10^-6

8.33067976×10^-4

-0.22188849

-1.37421077×10^-6

9.8408007×10^-4

-0.26287038

-1.5324566×10^-6

1.0972418×10^-3

-0.293044667

47.25775122

1165.616731

21.27674696

669.4412215

34.8165641

991.28909752

42.38417424

1048.4893025

Recovered Charge Q_RA, 50% chord (Valid di/dt range 20 to 300A/µs)

Values of k_pfor Q_RA

500A

1000A

2000A

3000A

-3.7814578×10^-7

2.7542681×10^-4

-0.075394944

12.50200437

320.8890665

-5.4862473×10^-7

4.0216244×10^-4

-0.111920413

20.1880681

-6.3898585×10^-7

4.7008097×10^-4

-0.132492106

26.18025723

370.1345301

-6.8739022×10^-7

5.0793771×10^-4

-0.144884397

30.8603883

382.338885

360.67474

Peak reverse recovery current I_RM(Valid di/dt range 20 to 300A/µs)

Values of k_pfor I_RM

500A

1000A

2000A

3000A

-8.7116617×10^-8

6.4820363×10^-5

-0.018819084

4.491855194

40.98577734

-9.8322233×10^-8

7.3315506×10^-5

-0.021431025

5.424942762

43.80097467

-1.0380561×10^-7

7.7287542×10^-5

-0.022611803

6.016380324

43.08144722

-1.1523353×10^-7

8.6147079×10^-5

-0.025303236

6.530380888

51.33697121

Reverse recovery time t_RR(Valid di/dt range 20 to 300A/µs)

Values of k_pfor t_RR

500A

1000A

2000A

3000A

4.3559656×10^-9

-3.0811453×10^-6

7.8578776×10^-4

-0.097953134

11.0906485

4.8471865×10^-9

-3.4281044×10^-6

8.7397553×10^-4

-0.108876127

13.30064257

4.8247815×10^-9

-3.4119193×10^-6

8.6979932×10^-4

-0.10835501

4.6950142×10^-9

-3.3193891×10^-6

8.4584224×10^-4

-0.105294524

14.61543672

14.08565971

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 7 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

0.1

SSC 0.022K/W

DSC 0.011K/W

0.01

T_j= 125°C

T_j= 25°C

1000

0.001

0.0001

R500CH20-28

Issue 1

R500CH20-28

Issue 1

100

0.00001

0.0001

1.5

2.5

3.5

0.001

0.01

0.1

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

R500CH20-28

Issue 1

R500CH20-28

Issue 1

T_j=25°C

Max V_Gdc

I_GT, V_GT

P_GMax 30W dc

P_G5W dc

I_GD, V_GD

Min V_Gdc

0.2

0.4

0.6

0.8

Gate Trigger Current - I_GT(A)

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 8 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Figure 5 - Total recovered charge, Q_RR

Figure 6 - Recovered charge, Q_RA(50% chord)

10000

1000

100

4000A

2000A

4000A

2000A

1000A

500A

T_j= 125°C

R500CH20-28

Issue 1

R500CH20-28

Issue 1

1000

100

Commutation rate - di/dt (A/µs)

1000

100

Commutation rate - di/dt (A/µs)

1000

Figure 7 - Peak reverse recovery current, I_RM

Figure 8 - Maximum recovery time, t_RR(50% chord)

100

10000

4000A

2000A

1000A

1000

4000A

2000A

1000A

500A

T_j= 125°C

R500CH20-28

Issue 1

R500CH20-28

Issue 1

100

1000

100

Commutation rate - di/dt (A/µs)

1000

Commutation rate - di/dt (A/µs)

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 9 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Figure 9 - Reverse recovery energy per pulse

Figure 10 - Sine wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R500CH20-28

Issue 1

T_j=125°C

4000A

2000A

1000A

10kA

8kA

500A

6kA

4kA

2kA

Measured

without

snubber

1kA

T_j= 125°C

_R= 400V

500A

R500CH20-28

Issue 1

0.1

1.00E-05

1.00E-04

1.00E-03

1.00E-02

100

Commutation rate - di/dt (A/µs)

1000

Pulse width (s)

Figure 11 - Sine wave frequency ratings

Figure 12 - Sine wave frequency ratings

1.00E+05

R500CH20-28

Issue 1

T_Hs=55°C

1kA

100% Duty Cycle

2kA

4kA

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

2kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

4kA

6kA

8kA

10kA

T_Hs=85°C

R500CH20-28

Issue 1

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse Width (s)

Pulse width (s)

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 10 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Figure 13 - Square wave frequency ratings

Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1kA

2kA

100% Duty Cycle

1.00E+04

4kA

6kA

8kA

1.00E+03

1.00E+02

1.00E+01

1.00E+00

10kA

8kA

10kA

T_Hs=55°C

di/dt=100A/µs

di/dt=500A/µs

R500CH20-28

Issue 1

R500CH20-28

Issue 1

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+05

500A

1kA

100% Duty Cycle

1.00E+04

100% Duty Cycle

2kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

2kA

4kA

1.00E+03

4kA

6kA

8kA

6kA

8kA

10kA

1.00E+02

1.00E+01

T_Hs=85°C

di/dt=500A/µs

di/dt=100A/µs

R500CH20-28

Issue 1

R500CH20-28

Issue 1

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 11 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Figure 17 - Square wave energy per pulse

Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R500CH20-28

Issue 1

R500CH20-28

Issue 1

di/dt=100A/µs

T_j=125°C

di/dt=500A/µs

T_j=125°C

1.00E+02

1.00E+01

10kA

8kA

6kA

4kA

1.00E+00

4kA

2kA

1kA

1.00E-01

1.00E-02

1kA

500A

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+08

I²t: V_RRM≤10V

I²t: 60% V_RRM

I_TSM: V_RRM≤10V

1.00E+07

I_TSM: 60% V_RRM

T_j(initial) = 125°C

R500CH20-28

Issue 1

1.00E+06

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 12 of 13

January, 2000

WESTCODE ^{Positive development in power electronics}

R500CH20 to R500CH28

Outline Drawing & Ordering Information

101A281

ORDERING INFORMATION

(Please quote 11 or 12 digit code as below)

R500

Fixed

Type

Code

Fixed

Outline

Code

♦ ♦

♦

♦(♦)

♦

Off-state Voltage Code

V_DRM/100

dv/dt Code

t_qCode

V_RRMcode

See note 1

below

C=20V/µs, D=50V/µs,

E=100V/µs, F=200V/µs

F=50µs, Y=55µs, 2H=60µs, W=65µs,

2G=70µs, E=75µs, D=100µs

20-32

Note 1.: A single digit represents V_RRMin 10% increments of the selected V_DRM

A zero in this position indicates that V_RRM=100% V_DRM. The examples shown below are for 80% and 100% respectively.

Typical order code : R500CH28E2G8 – 2.8kV V_DRM, 2.24kV V_RRM, 100V/µs dv/dt, 70µs t_q, 27.7mm clamp height capsule.

Typical order code : R500CH28E2G0 – 2.8kV V_DRM, 2.8kV V_RRM, 100V/µs dv/dt, 70µs t_q, 27.7mm clamp height capsule.

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448

WESTCODE

E-Mail: WSL.sales@westcode.com

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: 562 595 6971 Fax: 562 595 8182

E-Mail: WSI.sales@westcode.com

Internet: http://www.westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or

disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors

Ltd.

Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior

notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject

to the conditions and limits contained in this report.

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 13 of 13

January, 2000

R500CH20C2G3 [IXYS]

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