VBO40-12NO6 [IXYS]
Standard Rectifier; 标准整流器
| 型号： | VBO40-12NO6 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Standard Rectifier |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBO40-08NO6
1~
Rectifier
Standard Rectifier
VRRM
IDAV
IFSM
V
800
=
=
=
40 A
320 A
1~ Rectifier Bridge
Part number
VBO40-08NO6
Backside: isolated
3
2
1
4
SOT-227B (minibloc)
Package:
Features / Advantages:
Applications:
● Planar passivated chips
● Diode for main rectification
● Isolation Voltage:
V~
3000
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● For one phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Field supply for DC motors
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
© 2013 IXYS all rights reserved
VBO40-08NO6
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
900
800
40
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 800 V
VR = 800 V
µA
1.5 mA
forward voltage drop
VF
20
1.15
V
V
V
V
A
IF =
A
1.33
1.07
1.31
40
IF = 40 A
IF = 20 A
IF = 40 A
TC = 115°C
rectangular
TVJ
=
°C
125
bridge output current
TVJ = 150°C
TVJ = 150°C
IDAV
d = 0.5
VF0
0.81
V
threshold voltage
slope resistance
for power loss calculation only
rF
12.1 mΩ
1.3 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.10
TC = 25°C
TVJ = 45°C
VR = 0 V
95
320
345
270
295
W
A
A
A
A
total power dissipation
max. forward surge current
IFSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
TVJ = 150°C
VR = 0 V
value for fusing
I²t
TVJ = 45°C
VR = 0 V
510 A²s
495 A²s
365 A²s
360 A²s
pF
TVJ = 150°C
VR = 0 V
CJ
TVJ = 25°C
11
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
© 2013 IXYS all rights reserved
VBO40-08NO6
Ratings
Package SOT-227B (minibloc)
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
150
Unit
A
°C
°C
g
RMS current
Tstg
-40
-40
150
150
storage temperature
virtual junction temperature
TVJ
Weight
30
MD
1.1
1.1
1.5 Nm
mounting torque
terminal torque
M
1.5 Nm
T
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
10.5
8.6
3.2
mm
mm
V
creepage distance on surface | striking distance through air
6.8
t = 1 second
V
3000
2500
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Product Marking
Logo
Part No.
abcde
XXXXXX
YYWWZ
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Number
Marking on Product
Delivery Mode
Tube
Quantity Code No.
10 475866
VBO40-08NO6
VBO40-08NO6
Similar Part
Package
Voltage class
VBO40-12NO6
VBO40-16NO6
SOT-227B (minibloc)
SOT-227B (minibloc)
1200
1600
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Rectifier
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
0.81
10.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
© 2013 IXYS all rights reserved
VBO40-08NO6
Outlines SOT-227B (minibloc)
3
2
1
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
© 2013 IXYS all rights reserved
VBO40-08NO6
Rectifier
300
250
200
150
100
80
700
600
500
400
300
200
100
50 Hz
VR = 0 V
0.8 x V RRM
60
I2t
IF
TVJ = 45°C
IFSM
[A]
40
TVJ = 45°C
[A2s]
[A]
TVJ = 150°C
TVJ = 150°C
TVJ
=
20
125°C
150°C
TVJ = 25°C
0
10-3
10-2
10-1
100
1
10
0.6 0.8 1.0 1.2 1.4 1.6 1.8
t [ms]
VF [V]
t [s]
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
28
80
60
RthJA
:
DC =
1
0.5
DC =
1
0.6 KW
0.8 KW
24
20
16
12
8
0.4
0.5
1
2
4
8
KW
KW
KW
KW
0.33
0.17
0.08
0.4
0.33
0.17
0.08
IF(AV)M
Ptot
[W]
40
20
0
[A]
4
0
0
5
10
15
20
0
25
50
75 100 125 150 175
0
25 50 75 100 125 150
TA [°C]
IdAVM [A]
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
1.6
1.2
Constants for ZthJC calculation:
ZthJC
0.8
[K/W]
i
Rth (K/W)
ti (s)
1
2
3
4
5
0.061
0.145
0.398
0.405
0.291
0.0002
0.0036
0.0200
0.1000
0.7000
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
© 2013 IXYS all rights reserved
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