VBO50 [IXYS]
Single Phase Rectifier Bridge; 单相整流桥
| 型号： | VBO50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Single Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBO 50
IdAVM = 50 A
VRRM = 800-1800 V
Single Phase
Rectifier Bridge
+
-
+
VRSM
V
VRRM
V
Type
~
~
800
1200
1400
1600
1800
800
1200
1400
1600
1800
VBO 50-08NO7
VBO 50-12NO7
VBO 50-14NO7
VBO 50-16NO7
VBO 50-18NO7*
–
~
~
* delivery time on request
Symbol
IdAVM
Conditions
Maximum Ratings
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
TC = 64°C, module
50
A
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
750
820
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
670
740
A
A
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2800
2820
A2s
A2s
Applications
VR = 0
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2250
2300
A2s
A2s
• Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improvedtemperatureandpowercycling
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M5)
5
15%
Nm
Dimensions in mm (1 mm = 0.0394")
44 15% lb.in.
15% Nm
26 15% lb.in.
260
Terminal connection torque (M5)
typ.
3
Weight
g
Symbol
IR
Conditions
Characteristic Values
VR = VRRM
;
;
TVJ = 25°C
TVJ = TVJM
≤
≤
0.3
10.0
mA
mA
VR = VRRM
VF
IF = 150 A;
TVJ = 25°C
≤
1.6
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
8
V
mΩ
RthJC
RthJK
per diode; DC current
per module
per diode; DC current
per module
2.6
0.65
2.84
0.71
K/W
K/W
K/W
K/W
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
VBO 50
I
10
200
[A]
F(OV)
FSM
------
I
2
1:T = 150°C
VJ
I
(A)
As
FSM
TVJ=45°C
750
TVJ=150°C
670
2:T = 25°C
VJ
1.6
1.4
1.2
1
150
100
50
TVJ=45°C
3
TVJ=150°C
10
0 V
RRM
0.8
0.6
1/2 V
1 V
RRM
RRM
I
F
1
2
2
10
0.4
10
0
0
1
2
3
2
4
6
10
1
0.5
1
1.5
V [V]
2
2.5
10 t[ms] 10
10
t [ms]
F
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 ∫
i2dt versus time
(1-10ms) per diode or thyristor
85
100
[W]
70
TC
DC
90
0.6 0.35 = RTHCA [K/W]
sin.180°
rec.120°
rec.60°
.30°
[A]
95
0.85
80
60
40
100
105
110
115
120
125
130
135
140
145
50
30
10
1.35
2.35
5.35
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
I
dAV
PVTOT
0
°C
150
0
0
50
100
150
50
100
150
200
10
IFAVM
30
[A]
Tamb
[K]
T (°C)
C
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
4
K/W
Z
Z
thJK
thJC
3
2
1
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 2
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