VID75-06P1 [IXYS]
Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13;
| 型号： | VID75-06P1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13 局域网 电动机控制 栅 晶体管 |
| 文件： | 总2页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDI 100-06P1 VII 100-06P1
VID 100-06P1 VIO 100-06P1
IC25
VCES
= 93 A
= 600 V
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
VCE(sat) typ. = 2.4 V
Square RBSOA
Preliminary data sheet
VII
VIO
VDI
VID
L9
X15
L9
X13
NTC
X15
NTC
X16
E2
A1
X15
L9
F1
T16
B3
S18
NTC
X16
K10
Pin arangement see outlines
X16
Features
IGBTs
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
20
V
- fast switching
VGES
V
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
93
63
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = 15 V; RG = 15 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
150
VCES
A
µs
W
tSC
(SCSOA)
VCE = VCES; VGE
non-repetitive
=
15 V; RG = 15 Ω; TVJ = 125°C
10
Advantages
• space and weight savings
• reduced protection circuits
Ptot
TC = 25°C
294
• leads with expansion bend for stress relief
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Typical Applications
min.
typ. max.
• AC and DC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 100 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.4
2.8
2.8
V
V
• welding inverters
VGE(th)
ICES
IC = 1.5 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.4 mA
6.5 mA
Recommended replacement:
Please contact your local
sales office
±
IGES
VCE = 0 V; VGE
=
20 V
150 nA
td(on)
tr
td(off)
tf
Eon
Eoff
150
60
450
40
3.2
2.2
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 60 A
VGE = 15/0 V; RG = 15 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
4.2
nF
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
0.43 K/W
K/W
0.85
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1 - 2
VDI 100-06P1 VII 100-06P1
VID 100-06P1 VIO 100-06P1
VII
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
134
82
A
A
Symbol
VF
Conditions
Characteristic Values
min.
typ. max.
IF = 60 A; TVJ = 25°C
TVJ = 125°C
1.78 1.99
1.33
V
V
IRM
trr
IF = 60 A; di /dt = 500 A/µs; TVJ = 125°C
VR = 300 V;FVGE = 0 V
28
100
A
ns
RthJC
RthJH
0.66 K/W
K/W
B3
with heatsink compound (0.42 K/m.K; 50 µm)
1.32
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
VIO
R25
T = 25°C
4.75
5.0
5.25 kΩ
B25/50
3375
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
mounting torque (M4)
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
a
Max. allowable acceleration
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
mm
mm
Weight
24
g
VID
VDI
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2 - 2
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