VUE22-06NO7 [IXYS]
Bridge Rectifier Diode, 3 Phase, 34A, 600V V(RRM), Silicon, ECOPAC-5;型号: | VUE22-06NO7 |
厂家: | IXYS CORPORATION |
描述: | Bridge Rectifier Diode, 3 Phase, 34A, 600V V(RRM), Silicon, ECOPAC-5 局域网 二极管 |
文件: | 总2页 (文件大小:189K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VUE 22-06NO7
ECO-PAC TM
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
IdAV = 34 A
VRRM = 600 V
trr
= 35 ns
D
VRSM
V
VRRM
V
Typ
A
H
N
600
600
VUE 22-06NO7
K
Symbol
Conditions
Maximum Ratings
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
IdAV
IdAVM
①
TC = 85°C, module
34
90
A
A
IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
55
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
45
50
A
A
Applications
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
15
15
A2s
A2s
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
10
10
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA t = 1 s
3000
3600
V~
V~
• Small and light weight
• Low noise switching
Md
Weight
Mounting torque (M4)
typ.
1.5-2/14-18 Nm/lb.in.
19
g
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
Conditions
Characteristic Values
typ.
max.
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
0.06 mA
0.25 mA
VF
IF = 10 A
TVJ = 25°C
2.09
V
VT0
rT
for power-loss calculations only
1.18
22 mW
V
RthJC
RthCH
per diode; DC current
per diode, DC current, typ.
2.5 K/W
0.3 K/W
IRM
trr
IF = 12 A, -diF/dt = 100 A/µs
VR = 100 V, L = 0.05 mH, TVJ = 100°C
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V, TVJ = 25°C
4
4.4
A
35
tbd ns
a
dS
dA
Max. allowable acceleration
creeping distance on surface
creepage distance in air
50
11.2
9.7
m/s2
mm
mm
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VUE 22-06NO7
30
A
1.4
nC
1.2
40
A
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
25
30
IF
1.0
0.8
0.6
0.4
0.2
0.0
IRM
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Qr
20
15
10
5
IF= 20A
IF= 10A
IF= 5A
IF= 20A
IF= 10A
IF= 5A
20
10
0
0
0.0
V
A/ s
0.5
1.0
1.5
2.0
2.5
100
1000
0
200 400 600 1000
A/ s
-diF/dt
VF
-diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
2.0
120
20
1.2
TVJ=100°C
VR = 300V
ns
V
µs
VFR
VFR
110
tfr
trr
1.5
Kf
15
10
5
0.9
tfr
IF= 20A
IF= 10A
IF= 5A
100
90
1.0
0.6
0.3
0.
IRM
80
0.5
Qr
TVJ=100°C
IF = 10A
70
0.0
0
A/ s
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/ s
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
4
0.8776
0.3378
0.0678
1.2168
0.0052
0.0003
0.0004
0.0092
ZthJC
0.1
0.01
VBE17-06NO7/VUE22-06NO7
0.001
s
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2 - 2
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