VUO125-14NO7 [IXYS]
Three Phase Rectifier Bridge; 三相整流桥
| 型号： | VUO125-14NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO 125
IdAVM = 166 A
VRRM = 1200-1800 V
Three Phase
Rectifier Bridge
+
–
-
~
VRSM
V
VRRM
V
Type
+
~
~
~
~
1200
1400
1600
1800
1200
1400
1600
1800
VUO 125-12NO7
VUO 125-14NO7
VUO 125-16NO7
VUO 125-18NO7*
* delivery time on request
~
Features
●
Symbol
Test Conditions
Maximum Ratings
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
●
●
●
●
●
IdAVM
IFSM
TC = 85°C, module
= 45°C;
166
A
T
t = 10 ms (50 Hz), sine
1800
1950
A
A
VVRJ= 0
t = 8.3 ms (60 Hz), sine
T
= T
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1600
1800
A
A
VVRJ= 0 VJM
Applications
I2t
T
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
16200
16000
A2s
A2s
●
VVRJ= 0
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
●
T
= T
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
12800
13600
A2s
A2s
●
VVRJ= 0 VJM
●
Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
°C
°C
°C
Advantages
●
Easy to mount with two screws
Space and weight savings
Improved temperature and power
-40...+150
●
●
VISOL
Md
50/60 Hz, RMS
t = 1 min
t = 1 s
2500
3000
V~
V~
IISOL £ 1 mA
cycling
Mounting torque (M5)
5 ± 15 %
44 ± 15 %
5 ± 15 %
Nm
lb.in.
Nm
Dimensions in mm (1 mm = 0.0394")
Terminal connection torque (M5)
typ.
44 ± 15 %
lb.in.
Weight
225
g
Symbol
IR
Test Conditions
Characteristic Values
V = VRRM
;
;
TVJ = 25°C
TVJ = TVJM
£
£
0.3
8.0
mA
mA
VRR = VRRM
VF
VT0
rT
IF = 150 A;
TVJ = 25°C
£
1.3
0.8
3
V
V
For power-loss calculations only
mW
RthJC
RthJH
per diode
per module
0.83
0.138
K/W
K/W
per diode
per module
1.13
0.188
K/W
K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VUO 125
I2t
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 I2t versus time (1-10 ms)
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
case temperature
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.014
0.067
0.139
0.61
0.011
0.094
0.28
0.7
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.014
0.067
0.139
0.61
0.011
0.094
0.28
0.7
0.3
4.2
Fig. 6 Transient thermal impedance per diode
© 2000 IXYS All rights reserved
2 - 2
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