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VVZB135-16NO1 [IXYS]

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System; 三相整流桥IGBT ，快恢复二极管的制动系统
VVZB135-16NO1
型号： VVZB135-16NO1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
三相整流桥IGBT ，快恢复二极管的制动系统

栅极 三相整流桥 触发装置 可控硅整流器 二极管 快恢复二极管 双极性晶体管 局域网
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VVZB 135  
VRRM = 1600 V  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System  
IdAVM = 135 A  
10  
19  
+
+
11 13  
12 20  
16 15 14  
NTC  
VRRM  
Type  
V
6+7  
4+5  
2+3  
1
1600  
VVZB 135-16 NO1  
17  
E72873  
8+9  
18 21+22  
See outline drawing for pin arrangement  
Symbol  
Conditions  
Maximum Ratings  
Ftures  
• SoleringconnectionsforPCBmounting  
• Convenient package outline  
• Thermistor  
VRRM  
IdAVM  
1600  
135  
V
A
TC = 85°C; sinusoidal 120°  
IFSM  
TVJ = 45°C; t = 10 ms; VR = 0 V  
TVJ = 150°C; t = 10 ms; VR = 0 V  
700  
610  
A
• Isolation voltage 2500 V~  
Applications  
I2t  
TVJ = 45°C; t = 10 ms; VR = 0 V  
TVJ = 150°C; t = 10 ms; VR = 0 V  
245
1860  
A2s  
A2s  
• Drive Inverters with brake system  
Ptot  
TC = 25°C per diode  
190  
100  
W
Advantages  
(di/dt)cr  
TVJ = TVJM  
;
repetitive; IT = 150 A  
A/µs  
• 2 functions in one package  
• Easy to mount with two screws  
• Suitable for wave soldering  
• High temperature and power cycling  
capability  
f = 50 Hz; tP = 200 µs  
VD = 2/3 VDRM  
IG = 0.45 A;  
;
non repetitive; IT = Id(AV)3  
500  
A/µs  
V/µs  
diG/dt = 0.45 A/µs  
(dv/dt)cr  
PGM  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ∞; method 1 (linear voltage rse)  
;
1000  
TVJ = TVJM tP = 30 
;
10  
5
W
W
IT = Id(AV)/3; tP = 300 µs  
PGAVM  
0.5  
W
Recommended replacement:  
VVZB 135-16ioXT  
VCES  
VGE  
TVJ = 25°C to 150
Continuous  
1200  
20  
V
V
IC25  
IC80  
TC = 25°C; DC  
TC = 80°C; DC  
95  
67  
A
A
ICM  
tp = Pulse width limited by TVJM  
TC = 25°C  
100  
380  
A
Ptot  
W
VRRM  
IFAV  
IFRMS  
IFRM  
1200  
27  
38  
tbd  
V
A
A
A
TC = 80°C; rectangular d = 0.5  
TC = 80°C; rectangular d = 0.5  
TC = 80°C; tP = 10 µs; f = 5 kHz  
IFSM  
Ptot  
TVJ = 45°C; t = 10 ms  
TC = 25°C  
200  
130  
A
W
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions.  
20070912a  
© 2007 IXYS All rights reserved  
1 - 5  
VVZB 135  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IR, ID  
VR = VRRM  
VR = VRRM  
;
;
TVJ = 25°C  
TVJ = 150°C  
0.1 mA  
20 mA  
VF, VT  
IF = 80 A;  
TVJ = 25°C  
1.43  
V
VT0  
rT  
for power-loss calculations only  
TVJ = 150°C  
0.85  
7.1 mΩ  
V
VGT  
IGT  
VD = 6 V;  
VD = 6 V;  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
1.5  
1.6  
78 mA  
V
V
200 mA  
VGD  
IGD  
TVJ = TVJM  
TVJ = TVJM  
;
;
VD = 2/3 VDRM  
VD = 2/3 VDRM  
0.2  
5
V
mA  
IL  
VD = 6 V; tG = 10 µs;  
diG/dt = 0.45 A/µs; IG = 0.45 A  
450 mA  
IH  
TVJ = TVJM; VD = 6 V; RGK = ∞  
100 mA  
tgd  
VD = ½ VDRM  
diG/dt = 0.45 A/µs; IG = 0.45 A  
;
2
µs  
s  
tq  
TVJ = TVJM; VR = 100 V;  
VD = 2/3 VDRM; tP = 200 µs;  
dv/dt = 15 V/µs; IT = 20 A;  
-di/dt = 10 A/µs  
150  
RthJC  
RthCH  
per diode  
0.65 K/W  
K/W  
0.2  
VBR(CES)  
VGE(th)  
VGS = 0 V; IC = 0.1 mA  
IC = 8 mA  
100  
4
V
V
6.45  
ICES  
VCE = 1200 V; TVJ  
VCE = 0,8•VCES;TVJ = 125°C  
=
25°C  
0.1 mA  
0.5 mA  
VCEsat  
VGE = 15 V; IC = 100 A  
3.5  
10  
V
µs  
A
tSC (SCSOA)  
RBSOA  
VGE = 15 V; VCE = 900 V; TVJ = 125°C  
VGE = 15 V; VCE = 1200 VJ = 125°C;  
100  
clamped inductive loaL = 00 µH;  
RG = 22 Ω  
Cies  
VCE = 25 V; f = 1 Mz, VGE = 0 V  
3.8  
nF  
VCE = 720 V; IC 50 A  
td(on)  
td(off)  
Eon  
150  
680  
6
ns  
ns  
mJ  
mJ  
VGE = 15 V; RG = 22 Ω  
Inductive load; L = 100 µH;  
TVJ = 125°C  
Eoff  
5
RthJC  
RthCH  
0.33 K/W  
K/W  
0.1  
IXYS reserves the right to change limits, test conditions and dimensions.  
20070912a  
© 2007 IXYS All rights reserved  
2 - 5  
VVZB 135  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
10  
V
1: I  
GT, TVJ = 125°C  
2: IGT, TVJ 25°C  
=
3: IGT, TVJ = -40°C  
IR  
VR = VRRM  
;
TVJ = 25°C  
0.25 mA  
VG  
VR = 1200 V; TVJ = 125°C  
1
mA  
VF  
IF = 30 A; TVJ = 25°C  
2.76  
1.3  
16 mΩ  
V
3
VT0  
rT  
For power-loss calculations only  
TVJ = 150°C  
V
2
6
1
5
1
4
IRM  
trr  
IF = 50 A; -diF/dt = 100 A/µs; VR = 100 V  
IF = 1 A; -diF/dt = 200 A/µs; VR = 30 V  
5.5  
40  
11  
A
ns  
4: P  
GAV = 0.5 W  
RthJC  
RthCH  
0.9 K/W  
K/W  
5: PGM 5 W  
=
0.25  
I
GD, TVJ = 125°C  
6: PGM = 10 W  
1
T
1
0.1  
R25  
B25/50  
4.75  
5.0 5.25 kΩ  
(
B25/100  
)
298K  
mA  
1
10  
100  
1000  
IG  
R(T) = R25 • e  
3375  
K
Fig. 1 Gate trigger characteristics  
Symbol  
Conditions  
Maximum Ratings  
1000  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
T
VJ = 25°C  
μs  
tgd  
VISOL  
50/60 Hz; t = 1 min  
IISOL ≤ 1 mA; t = 1 s  
2500  
3000  
V~  
V~  
typ.  
Limit  
100  
10  
1
Md  
Mounting torque  
2.7...3.3  
Nm  
dS  
dA  
a
Creep distance on surface  
Strike distance in air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
Weight  
typ.  
180  
g
Dimensions in mm (1 mm = 0.0394")  
10  
100  
mA 1000  
IG  
Fig. 2 Gate trigger delay time  
IXYS reserves the right to change limits, test conditions and dimensions.  
20070912a  
© 2007 IXYS All rights reserved  
3 - 5  
VVZB 135  
150  
A
600  
10000  
I2t  
VR = 0 V  
50 Hz  
80 % VRRM  
A
125  
500  
A2s  
IT  
ITSM  
100  
75  
50  
25  
0
400  
300  
200  
100  
0
TVJ =45°C  
TVJ = 45°C  
TVJ =150°C  
1000  
TVJ =150°C  
TVJ =125°C  
TVJ = 25°C  
100  
150  
s
0.0  
0.5  
1.0  
1.5  
VT  
V
2.0  
0.001  
0.01  
0.1  
1
ms  
10  
1
t
t
Fig. 5 I²t versus time  
Fig. 3 Forward current versus  
voltage drop per leg  
Fig. 4 Surge overload current  
(perthyristor/diode)  
250  
W
RthKA K/W =  
0.2  
A
0.5  
200  
120  
Ptot  
ITAVM  
150  
90  
60  
30  
0
1
100  
50  
0
1.5  
2
3
5
A
0
30  
60  
90  
IRMS  
120  
0
25  
50  
75  
100  
TA  
125  
150  
0
25 50 75 100 125 150  
TC  
Fig. 6 Power dissipation versudireoutput current and ambient temperature  
Fig. 7 Maximum forward current  
at case temperature  
0.7  
K/W  
0.6  
0.5  
ZthJC  
0.4  
0.3  
0.2  
0.1  
0.0  
Constants for ZthJC calculation:  
Rthi / (K/W)  
ti / (s)  
0.03  
0.083  
0.361  
0.176  
0.0005  
0.008  
0.094  
0.45  
VVZB 135  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)  
IXYS reserves the right to change limits, test conditions and dimensions.  
20070912a  
© 2007 IXYS All rights reserved  
4 - 5  
VVZB 135  
90  
A
150  
A
120  
TVJ = 125°C  
IF  
TVJ = 25°C  
IC  
T
VJ = 125°C  
60  
30  
0
90  
60  
30  
0
TVJ = 25°C  
VGE = 15V  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  
V
VF  
VCE  
Fig. 9 Typ. output characteristics  
Fig. 10 Typ. forward characteristics of  
free wheeling diode  
9
900  
10  
1000  
td(off)  
mJ  
8
ns  
ns  
mJ  
800  
Eoff  
Eoff  
td(off)  
t
t
6
3
0
600  
6
4
2
0
600  
400  
200  
0
VCE = 720 V  
VGE 15 V  
Eoff  
VCE = 720 V  
=
300  
VGE  
IC  
=
=
15 V  
50 A  
RG = 22 Ω  
TVJ = 125°C  
Eoff  
TVJ = 125°C  
tf  
tf  
120  
A
0
10  
20  
30  
40  
50  
60  
Ω
0
20  
40  
60  
80  
IC  
100  
RG  
Fig. 11 Typ. turn off energy and switching  
times versus collecr current  
Fig. 12 Typ. turn off energy and switching  
times versus gate resistor  
1
diode  
IGBT  
K/W  
0.1  
10000  
ZthJC  
0.01  
Ω
R
1000  
0.001  
single pulse  
VVZB 135  
100  
0.0001  
0.000010.0001 0.001 0.01  
0.1  
1
10  
0
25  
50  
75  
100  
125 °C 150  
s
t
T
Fig. 13 Typ. transient thermal impedance  
Fig. 14 Typ. thermistor resistance versus  
temperature  
IXYS reserves the right to change limits, test conditions and dimensions.  
20070912a  
© 2007 IXYS All rights reserved  
5 - 5  

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