VWM200-01P [IXYS]
Power Field-Effect Transistor, 210A I(D), 100V, 0.0052ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-24;
| 型号： | VWM200-01P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 210A I(D), 100V, 0.0052ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-24 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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