首页 |元器件品牌

WPH44-16 [IXYS]

Silicon Controlled Rectifier, 49000mA I(T), 1600V V(RRM),;
WPH44-16
型号： WPH44-16
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Silicon Controlled Rectifier, 49000mA I(T), 1600V V(RRM),

栅 栅极
文件： 总4页 (文件大小：129K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
WESTCODE  
SEMICONDUCTORS  
ITRMS = 2 x 80 A  
ITAVM = 2 x 51 A  
VRRM = 800 - 1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
TO-240 AA  
VRSM  
VDSM  
V
VRRM  
VDRM  
V
Type  
6
3
7
4
2
5
1
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
WPT44-08  
WPT44-12  
WPT44-14  
WPT44-16  
WPT44-18  
WPH 44-08  
WPH 44-12  
WPH 44-14  
WPH 44-16  
WPH 44-18  
3
3
6 7 1  
5 4 2  
Symbol  
Test Conditions  
Maximum Ratings  
ITRMS, IFRMS  
TVJ = TVJM  
TC = 83°C; 180° sine  
TC = 85°C; 180° sine  
80  
51  
49  
A
A
A
WPT 44  
WPH 44  
ITAVM FAVM  
, I  
ITSM, IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1150  
1230  
A
A
1
5 2  
T
VJ = TVJM  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1000  
1070  
A
A
VR = 0  
∫i2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
6600  
6280  
A2s  
A2s  
T
VJ = TVJM  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
5000  
4750  
A2s  
A2s  
VR = 0  
Features  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 150 A  
150  
A/µs  
f =50 Hz, tP =200 µs  
VD = 2/3 VDRM  
IG = 0.45 A  
●
International standard package,  
JEDEC TO-240 AA  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
Gate-cathode twin pins for WPT  
non repetitive, IT = ITAVM  
VDR = 2/3 VDRM  
500  
A/µs  
V/µs  
●
diG/dt = 0.45 A/µs  
●
●
●
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
RGK = ∞; method 1 (linear voltage rise)  
TVJ = TVJM  
IT = ITAVM  
tP = 30 µs  
tP = 300 µs  
10  
5
W
W
W
PGAV  
VRGM  
0.5  
Applications  
●
10  
V
DC motor control  
Softstart AC motor controller  
Light,heatandtemperaturecontrol  
●
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
●
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
I
ISOL ≤ 1 mA  
●
Space and weight savings  
Simple mounting with two screws  
●
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35 Nm/lb.in.  
2.5-4.0/22-35 Nm/lb.in.  
●
Improved temperature and power  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
90  
g
●
Symbol  
IRRM, IDRM  
VT, VF  
Test Conditions  
Characteristic Values  
10  
V
1: IGT, TVJ = 125°C  
2: IGT, TVJ 25°C  
TVJ = TVJM; VR = VRRM; VD = VDRM  
IT, IF = 200 A; TVJ = 25°C  
5
1.75  
0.85  
mA  
V
=
3: IGT, TVJ = -40°C  
VG  
VT0  
rT  
For power-loss calculations only (TVJ = 125°C)  
V
5.3 mΩ  
VGT  
IGT  
VD = 6 V;  
VD = 6 V;  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
1.5  
1.6  
100 mA  
200 mA  
V
V
3
2
6
1
5
1
4
VGD  
IGD  
TVJ = TVJM  
;
VD = 2/3 VDRM  
0.2  
10 mA  
V
4: PGAV = 0.5 W  
5: PGM 5 W  
6: PGM = 10 W  
IL  
TVJ = 25°C; tP = 10 µs, VD = 6 V  
IG = 0.45 A; diG/dt = 0.45 A/µs  
450 mA  
=
IGD, TVJ = 125°C  
IH  
TVJ = 25°C; VD = 6 V; RGK = ∞  
200 mA  
0.1  
100  
101  
102  
103  
IG  
104  
mA  
tgd  
TVJ = 25°C; VD = 1/2 VDRM  
2
µs  
IG = 0.45 A; diG/dt = 0.45 A/µs  
Fig. 1 Gate trigger characteristics  
tq  
TVJ = TVJM; IT = 120 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150  
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM  
µs  
1000  
TVJ = 25°C  
QS  
IRM  
TVJ = TVJM; IT, IF = 50 A, -di/dt = 0.64 A/µs  
90  
11  
µC  
A
µs  
RthJC  
RthJK  
per thyristor/diode; DC current  
per module  
per thyristor/diode; DC current  
per module  
0.53 K/W  
0.265 K/W  
0.73 K/W  
0.365 K/W  
tgd  
other values  
see Fig. 8/9  
typ.  
Limit  
100  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
10  
Optional accessories for module-type WPT  
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red  
TypeU9910  
UL 758, style 1385,  
CSA class 5851, guide 460-1-1  
1
10  
mA  
100  
1000  
IG  
Fig. 2 Gate trigger delay time  
Dimensions in mm (1 mm = 0.0394")  
WPT 44  
WPH 44  
Circuit  
B6  
3 x WPT 44 or  
3 x WPH 44  
Fig. 7 ThreephaseAC-controller:  
Power dissipation versus RMS output  
currentandambienttemperature  
Circuit  
W 3  
3 x WPT 44 or  
3 x WPH 44  
Fig. 8 Transientthermalimpedancejunction  
to case (per thyristor or diode)  
WPT 44  
WPH 44  
RthJC for various conduction angles d:  
d
RthJC (K/W)  
DC  
180°  
120°  
60°  
0.53  
0.55  
0.58  
0.6  
30°  
0.62  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.015  
0.026  
0.489  
0.0035  
0.02  
0.195  
Fig. 9 Transientthermalimpedancejunction  
to heatsink (per thyristor or diode)  
WPT 44  
WPH 44  
RthJK for various conduction angles d:  
d
RthJK (K/W)  
DC  
180°  
120°  
60°  
0.73  
0.75  
0.78  
0.8  
30°  
0.82  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.015  
0.026  
0.489  
0.2  
0.0035  
0.02  
0.195  
0.68  
UK : Westcode Semiconductors Ltd  
P.O. Box 97, Chippenham, Wiltshire, England SN15 1JL  
Tel : +44 (0)1249 444524 Fax : +44 (0)1249 659448  
E-Mail : WSL.sales@westcode.com  
WESTCODE  
SEMICONDUCTORS  
USA : Westcode Semiconductors Inc  
3270 Cherry Avenue Long Beach, California 90807  
Tel : 562 595 6971 Fax : 562 595 8182  
WWW: http//www.westcode.com  
In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice.  
© Westcode Semiconductors Ltd  

相关型号：

WPH44-18

 Silicon Controlled Rectifier, 76.93A I(T)RMS, 49000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element
IXYS

WPH56-14

 Silicon Controlled Rectifier, 60000mA I(T), 1400V V(RRM),
IXYS

WPH56-16

 Silicon Controlled Rectifier, 60000mA I(T), 1600V V(RRM),
IXYS

WPH56-18

 Silicon Controlled Rectifier, 94.2 A, 1800 V, SCR
IXYS

WPH72-08

 Silicon Controlled Rectifier, 85000mA I(T), 800V V(RRM),
LITTELFUSE

WPH72-12

 Silicon Controlled Rectifier, 133.45 A, 1200 V, SCR
IXYS

WPH72-14

 Silicon Controlled Rectifier, 85000mA I(T), 1400V V(RRM),
LITTELFUSE

WPH72-16

 Silicon Controlled Rectifier, 85000mA I(T), 1600V V(RRM),
LITTELFUSE

WPH72-18

 Silicon Controlled Rectifier, 133.45A I(T)RMS, 85000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element
IXYS

WPH94-20

 Silicon Controlled Rectifier, 163.28A I(T)RMS, 104000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element
IXYS

WPH94-22

 Silicon Controlled Rectifier, 163.28A I(T)RMS, 104000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element
IXYS

WPH95-12

 Silicon Controlled Rectifier, 182.12A I(T)RMS, 116000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element
IXYS
©2020 ICPDF网 联系我们和版权申明