2SA1013O(SOT-89-3L) [JCST]
Transistor;
| 型号： | 2SA1013O(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：2681K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SA1013
TRANSISTOR (PNP)
1. BASE
FEATURE
1
y
y
High voltage
2. COLLECTOR
3. EMITTER
2
3
Large continuous collector current capability
MARKING: 1013
℃
MAXIMUM RATINGS (Ta=25 unless otherwise noted )
Symbol
VCBO
Parameter
Value
-160
-160
-6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1
A
PC
0.5
W
℃
℃
℃
Tj
150
Tstg
RθJA
Storage Temperature
-55~+150
Thermal Resistance from Junction to Ambient
250
/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=- 100μA , IE=0
IC= -1mA , IB=0
Min
-160
-160
-6
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
IE= -10μA, IC=0
V
VCB=-150 V , IE=0
VEB=-6V, IC=0
-1
-1
μA
μA
IEBO
DC current gain
hFE
VCE=-5 V, IC=- 200mA
IC= -500m A, IB= -50mA
IC= -5 mA, VCE=- 5V
60
15
320
-1.5
-0.75
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
Transition frequency
V
CE= -5 V, IC= -200mA
MHz
fT
CLASSIFICATION OF hFE
Rank
R
O
Y
Range
60-120
100-200
160-320
A,Mar,2011
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