2SC4375O [JCST]

Transistor;
2SC4375O
型号: 2SC4375O
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Transistor

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中文:  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-89-3L Plastic-Encapsulate Transistors  
SOT-89-3L  
2SC4375  
TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
z
z
Small Flat Package  
Low Collector- Emitter Saturation Voltage  
3. EMITTER  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
30  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
5
V
Collector Current  
1.5  
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
500  
mW  
/W  
RθJA  
Tj  
250  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
30  
30  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
IC=1mA,IE=0  
IC=10mA,IB=0  
V
IE=1mA,IC=0  
V
VCB=30V,IE=0  
0.1  
0.1  
320  
2
µA  
µA  
IEBO  
VEB=5V,IC=0  
DC current gain  
hFE  
VCE=2V, IC=500mA  
IC=1.5A,IB=30mA  
VCE=2V, IC=500mA  
VCE=2V,IC=500mA  
VCB=10V, IE=0, f=1MHz  
100  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
1
fT  
120  
MHz  
pF  
Transition frequency  
Collector output capacitance  
Cob  
40  
CLASSIFICATION OF hFE  
RANK  
RANGE  
O
Y
100200  
GO  
160320  
MARKING  
GY  
A,Nov,2010  

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