2SD1760Q(TO-251) [JCST]
Transistor;
| 型号： | 2SD1760Q(TO-251) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体管 |
| 文件： | 总2页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
TO-251
2SD1760 TRANSISTOR (NPN)
TO-252-2
FEATURES
z
Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A)
Complements the 2SB1184.
1. BASE
z
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
60
50
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
1.5
A
PC
W
℃
℃
TJ
150
Storage Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
V
V
ICBO
IEBO
hFE
VCB=40V, IE=0
VEB=4V, IC=0
1
1
μA
μA
Emitter cut-off current
DC current gain
VCE=3V, IC=500mA
82
390
1
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=2A, IB=200mA
V
VCE=5V, IC=500mA,f=30MHz
VCB=10V, IE=0, f=1MHz
90
40
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
Typical Characteristics
2SD1760
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