2SD1815S(TO-252) [JCST]
Transistor;
| 型号： | 2SD1815S(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD1815 TRANSISTOR (NPN)
TO-252
FEATURES
z
z
z
z
Low Collector-to-Emitter Saturation Voltage
1. BASE
Excllent Linearity of hFE
High fT
2. COLLECTOR
3. EMITTER
Fast Switching Time
MAXIMUM RATINGS (Ta=25 unless otherwise note)
℃
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Unit
V
120
100
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
A
PC
1
W
℃
℃
TJ
150
Storage Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
120
100
6
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10μA, IC=0
V
V
V
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=100V, IE=0
VEB=4V, IC=0
1
1
μA
μA
Emitter cut-off current
VCE=5V, IC=500mA
VCE=5V, IC=2A
70
40
400
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
0.4
1.2
V
V
180
25
MHz
pF
nS
nS
nS
Cob
100
900
50
ton
Storage time
tS
V
CC=50V,IC=1.5A, IB1=-IB2=-0.15A
Fall time
tf
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
T
Range
70-140
100-200
140-280
200-400
A,Feb,2011
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