2SD2118Q(TO-252) [JCST]
Transistor;
| 型号： | 2SD2118Q(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD2118 TRANSISTOR (NPN)
TO-252
FEATURES
z
Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
Excellent DC Current Gain Characteristics.
1.BASE
z
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
20
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
5
1
A
PC
W
℃
℃
TJ
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
50
20
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50µA,IE=0
V(BR)CEO IC =1mA,IB=0
V(BR)EBO IE=50µA,IC=0
V
V
ICBO
IEBO
hFE
VCB=40V,IE=0
0.5
0.5
390
1
µA
µA
Emitter cut-off current
VEB=5V,IC=0
DC current gain
VCE=2V,IC=0.5A
120
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=4A,IB=100mA
VCE=6V,IC=50mA,f=100MHz
VCB=20V,IE=0,f=1MHz
V
150
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
Q
R
120-270
180-390
Range
A,Jun,2011
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