3CA2050R [JCST]
Transistor;
| 型号： | 3CA2050R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO – 220F
3CA2050 TRANSISTOR (PNP)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
High Breakdown Voltage
General Purpose Switching and Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-180
-160
-6
Unit
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Current
-1.5
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
1.5
W
℃/W
℃
RθJA
Tj
83
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-180
-160
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-1mA,IE=0
IC=-10mA,IB=0
V
IE=-100µA,IC=0
VCB=-180V,IE=0
VEB=-6V,IC=0
V
-10
-10
240
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE=-5V, IC=-0.2A
VCE=-5V, IC=-1.5A
IC=-500mA,IB=-50mA
VCE=-10V,IC=-0.05A
60
50
DC current gain
hFE(2)
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
-1
V
50
MHz
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
60-140
100-240
A,Dec,2010
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