3CA753G(TO-251) [JCST]
Transistor;
| 型号： | 3CA753G(TO-251) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
3CA753 TRANSISTOR (PNP)
TO-251
TO-252-2L
FEATURES
Power dissipation
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1.BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
2.COLLECTOR
3.EMITTER
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-30
V
-5
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
-2
A
PC
1.2
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-40
-30
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100µA,IE=0
V(BR)CEO IC=-10mA,IB=0
V(BR)EBO IE=-1mA,IC=0
V
V
ICBO
IEBO
VCB=-40V,IE=0
-0.1
-0.1
400
-0.8
-2
µA
µA
Emitter cut-off current
VEB=-5V,IC=0
DC current gain
hFE
VCE=-2V,IC=-500mA
IC=-2A,IB=-200mA
IC=-1.5A,IB=-30mA
VCE=-5V,IC=-500mA
VCB=-10V,IE=0,f=1MHz
100
VCE(sat)
VCE(sat)
fT
V
V
Collector-emitter saturation voltage
Transition frequency
120
13
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Y
G
Range
100-200
160-320
200-400
Marking
Typical Characteristics
3CA753
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