3CA772Y [JCST]
Transistor;
| 型号： | 3CA772Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 局域网 晶体管 |
| 文件： | 总1页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA772 TRANSISTOR (PNP)
TO – 126
FEATURES
1. BASE
z
z
High Current
Low Voltage
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-40
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-6
V
Collector Current
-3
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
1.25
100
W
RθJA
Tj
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-40
-30
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-100µA,IE=0
IC=-10mA,IB=0
V
IE=-100µA,IC=0
VCB=-40V,IE=0
V
-1
μA
μA
μA
Collector cut-off current
ICEO
VCE=-30V,IB=0
-10
-1
Emitter cut-off current
IEBO
VEB=-6V,IC=0
DC current gain
hFE
VCE=-2V, IC=-1A
IC=-2A,IB=-0.2A
IC=-2A,IB=-0.2A
VCE=-5V,IC=-0.1A, f=10MHz
60
50
400
-0.5
-1.5
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
GR
RANGE
60-120
100-200
160-320
200-400
A,Dec,2010
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