3DD13002-TO-126 [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )型号: | 3DD13002-TO-126 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( NPN ) |
文件: | 总3页 (文件大小:903K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-126 Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR( NPN )
TO— 126
FEATURES
Power dissipation
PCM
Collector current
ICM
:
1.25
1
W(Tamb=25℃)
1.BASE
:
A
V
2.COLLECTOR
3.EMITTER
Collector-base voltage
V(BR)CBO : 600
1 2 3
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic= 100μA, IE=0
Ic= mA, IB=0
IE= 100μA, IC=0
conditions
MIN
600
400
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
1
V
V
VCB= 600
VEB= 6
V, IE=0
V, IC=0
100
100
µA
µA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE= 10 V, IC= 250 µA
VCE= 10 V, IC= 200 mA
IC=200mA, IB= 40 mA
IC=200mA, IB= 40 mA
5
9
DC current gain
40
0.8
1.1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
V
V
VCE=10V, Ic=100mA
f =1MHz
5
MHz
µs
tf
0.5
2.5
IC=1A, I =-IB2=0.2A
B1
VCC=100V
Storage time
ts
µs
CLASSIFICATION OF hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
TO-126 PACKAGE OUTLINE DIMENSIONS
A
D
A1
b1
b
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.900
1.500
0.860
1.370
0.600
7.800
11.000
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.114
0.059
0.034
0.054
0.024
0.307
0.433
A
A1
b
b1
c
D
E
2.290TYP
0.090TYP
e
4.480
15.300
2.100
3.900
3.000
4.680
15.700
2.300
4.100
3.200
0.176
0.602
0.083
0.154
0.118
0.184
0.618
0.091
0.161
0.126
e1
L
L1
P
φ
相关型号:
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