8550SSD [JCST]
Transistor;
| 型号： | 8550SSD |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
8550SS TRANSISTOR (PNP)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
General Purpose Switching and Amplification.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-40
Unit
V
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
-1.5
A
PC
1
W
RθJA
Tj
125
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -0.1mA,IE=0
IC=-0.1mA,IB=0
V
IE=-0.1mA,IC=0
V
VCB=-40V,IE=0
-0.1
-0.1
-0.1
300
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
hFE(1)
VCE=-1, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA,IB=-80mA
IC=-800mA,IB=-80mA
VCE=-10V,IC=-50mA,f=30MHz
85
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
-0.5
-1.2
V
V
100
MHz
CLASSIFICATION OF hFE
(1)
RANK
B
C
D
RANGE
85-160
120-200
160-300
A,Dec,2010
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